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SN64BCT757

OCTAL BUFFER/DRIVER

WITH OPEN-COLLECTOR OUTPUTS

SCBS479 – MARCH 1993 – REVISED MAY 1994

3–1

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

• BiCMOS Design Significantly Reduces I

CCZ

• ESD Protection Exceeds 2000 V Per

MIL-STD-883C, Method 3015; Exceeds

200 V Using Machine Model (C = 200 pF,

R = 0)

• High-Impedance State During Power Up

and Power Down

• Open-Collector Outputs Drive Bus Lines

or Buffer-Memory Address Registers

• Package Options Include Plastic

Small-Outline (DW) Packages and Standard

Plastic and Ceramic 300-mil DIPs (N)

description

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state

memory address drivers, clock drivers, and bus-oriented receivers and transmitters. The device provides

complementary output-enable (OE and OE) inputs and noninverting outputs.

The SN64BCT757 is characterized for operation from –40°C to 85°C and 0°C to 70°C.

FUNCTION TABLES

INPUTS

OUTPUT

1OE 1A

H X H

L LL

L H H

INPUTS

OUTPUT

2OE 2A

L X H

H LL

H H H

DW OR N PACKAGE

(TOP VIEW)

1OE

1A1

2Y4

1A2

2Y3

1A3

2Y2

1A4

2Y1

GND

2OE

1Y1

2A4

1Y2

2A3

1Y3

2A2

1Y4

2A1

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Summary of content (9 pages)

PAGE 1
SN64BCT757 OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS SCBS479 – MARCH 1993 – REVISED MAY 1994 • • • • • DW OR N PACKAGE (TOP VIEW) BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) High-Impedance State During Power Up and Power Down Open-Collector Outputs Drive Bus Lines or Buffer-Memory Address Registers Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic and Cerami
PAGE 2
SN64BCT757 OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS SCBS479 – MARCH 1993 – REVISED MAY 1994 logic symbol† 1OE 1A1 1A2 1A3 1A4 1 logic diagram (positive logic) 1OE EN 2 18 4 16 6 14 12 8 1Y1 1A1 2A1 2A2 2A3 2A4 19 2 18 4 16 1Y2 1Y3 1A2 1Y1 1Y2 1Y4 1A3 2OE 1 6 14 1Y3 EN 11 9 13 7 15 5 17 3 1A4 8 12 1Y4 2Y1 2Y2 2Y3 2OE 19 2Y4 † This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
PAGE 3
SN64BCT757 OCTAL BUFFER/DRIVER WITH OPEN-COLLECTOR OUTPUTS SCBS479 – MARCH 1993 – REVISED MAY 1994 recommended operating conditions (see Note 2) MIN NOM MAX 4.5 5 5.5 UNIT VCC VIH Supply voltage VIL VOH Low-level input voltage High-level output voltage 5.5 V IIK IOL Input clamp current –18 mA 64 mA ∆t/∆VCC TA Power-up ramp rate High-level input voltage 2 V 0.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 3-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SN64BCT757DWR SOIC DW 20 2000 330.0 24.4 10.8 13.0 2.7 12.0 24.0 Q1 SN64BCT757DWR SOIC DW 20 2000 330.0 24.4 10.8 13.3 2.7 12.0 24.
PAGE 6
PACKAGE MATERIALS INFORMATION www.ti.com 3-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN64BCT757DWR SOIC DW 20 2000 367.0 367.0 45.0 SN64BCT757DWR SOIC DW 20 2000 367.0 367.0 45.
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