Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsInterface ICsInterface IC - transceivers CAN 1/1 SOIC 8

SilentMode

Over-Temperature

Sensor

Dominant

Time-Out

Driver

30 Am

TXD

RXD

ref

CANH

CANL

SN65HVD1050

www.ti.com

SLLS632B –DECEMBER 2005–REVISED MARCH 2010

EMC OPTIMIZED CAN TRANSCEIVER

Check for Samples: SN65HVD1050

FEATURES

DESCRIPTION

• Improved Replacement for the TJA1050

• High Electromagnetic Immunity (EMI)

The SN65HVD1050 meets or exceeds the

specifications of the ISO 11898 standard for use in

• Very Low Electromagnetic Emissions (EME)

applications employing a Controller Area Network

• Meets or Exceeds the Requirements of

(CAN).

ISO 11898-2

As a CAN transceiver, this device provides differential

• Bus-Fault Protection of –27 V to 40 V

transmit capability to the bus and differential receive

• Dominant Time-Out Function

capability to a CAN controller at signaling rates up to

1 megabit per second (Mbps)

(1)

• Power-Up/Down Glitch-Free Bus Inputs and

Outputs

Designed for operation is especially harsh

– High Input Impedance with Low V

environments, the HVD1050 features cross-wire,

over-voltage and loss of ground protection from -27 V

– Monotonic Outputs During Power Cycling

to 40V, over-temperature shut down, a -12 V to 12 V

common-mode range, and will withstand voltage

APPLICATIONS

transients from -200 V to 200 V according to ISO

• Industrial Automation

7637.

– DeviceNet™ Data Buses (Vendor ID #806)

• SAE J2284 High Speed CAN for Automotive

Applications

• SAE J1939 Standard Data Bus Interface

(1) The signaling rate of a line is the number of voltage

• ISO 11783 Standard Data Bus Interface

transitions that are made per second expressed in the units

• NMEA 2000 Standard Data Bus Interface bps (bits per second).

FUNCTION BLOCK DIAGRAM

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2DeviceNet is a trademark of Open DeviceNet Vendors Association, Inc.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (24 pages)

PAGE 1
SN65HVD1050 www.ti.
PAGE 2
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
PAGE 3
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 ELECTROSTATIC DISCHARGE PROTECTION (1) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS IEC Contact Discharge VALUE IEC 61000-4-2 Bus terminals vs GND ±6 kV Human Body Model JEDEC Standard 22, Test Method A114-C.01 Bus terminals vs GND ±8 kV All pins ±4 kV Field-Induced-Charged Device Model JEDEC Standard 22, Test Method C101 All pins ±1.5 kV Machine Model ANSI/ESDS5.
PAGE 4
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com DRIVER ELECTRICAL CHARACTERISTICS over recommended operating conditiions (unless otherwise noted) PARAMETER TEST CONDITIONS CANH VO(D) Bus output voltage (Dominant) CANL VO(R) VI = 0 V, S at 0 V, RL = 60 Ω, See Figure 1 and Figure 2 Differential output voltage (Dominant) VOD(R) Differential output voltage (Recessive) VOC(ss) Steady state common-mode output voltage 4.5V < VCC < 5.5V 4.75V < VCC < 5.25V 2.9 3.4 4.
PAGE 5
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 RECEIVER ELECTRICAL CHARACTERISTICS over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX 800 900 UNIT VIT+ Positive-going input threshold voltage VIT– Negative-going input threshold voltage Vhys Hysteresis voltage (VIT+ – VIT–) VOH High-level output voltage IO = –2 mA, See Figure 6 VOL Low-level output voltage IO = 2 mA, See Figure 6 0.2 0.
PAGE 6
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com THERMAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP Low-K thermal resistance (1) 211 High-K thermal resistance 131 qJA Junction-to-Air qJB Junction-to-Board Thermal Resistance 53 qJC Junction-to-Case Thermal Resistance 79 PD Average power dissipation TJ_shutdown (1) (2) VCC = 5.
PAGE 7
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 PARAMETER MEASUREMENT INFORMATION IO(CANH) II Dominant 3.5 V VO (CANH) TXD VOD RL VO(CANH) + VO(CANL) Recessive 2.5 V 2 S VI VO(CANH) I I(S) + VI(S) _ VOC I O(CANL) V O(CANL) 1.5 V Figure 1. Driver Voltage, Current, and Test Definition CANH 0V TXD VOD Figure 2. Bus Logic State Voltage Definitions 330 W +1% RL + _ S CANL VO(CANL) −2 V 3 VTEST 3 7 V 330 W +1% Figure 3.
PAGE 8
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) 3.5 V CANH VI V RXD 1.5 V tPLH CANL 1.5 V 2.4 V IO I (See Note A) 2V CL = 15 pF + 20% (See Note B) S VO VO tPHL 90% 0.7 VCC 10% VOH 0.3 VCC VOL tf tr A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 125 kHz, 50% duty cycle, tr ≤ 6 ns, tf ≤ 6ns, ZO = 50 Ω. B. CL includes instrumentation and fixture capacitance within ±20%.
PAGE 9
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 27 W +1% VI DVOC(SS) CANH TXD VOC CANL S 27 W +1% 47 nF V = VO(CANH) + VO(CANL) +20% OC 2 NOTE: All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns. Pulse Repetition Rate (PRR) = 125 kHz, 50% duty cycle. Figure 8.
PAGE 10
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com | IOS(SS) | | IOS(P) | IOS 200 ms CANH TXD 0V 0 V or VCC 12 V S CANL VIN −12 V or 12 V Vin 0V or 0V 10 ms Vin −12 V Figure 11.
PAGE 11
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 DEVICE INFORMATION Table 5.
PAGE 12
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com Equivalent Input and Output Schematic Diagrams TXD Input Vcc RXD Output Vcc 25 W 4.3 kW Output Input 6V 6V CANL Input CANH Input Vcc Vcc 10 kW 10 kW 20 kW 20 kW Input Input 10 kW 40 V 10 kW 40 V CANH and CANL Outputs S Input Vcc Vcc CANH 4.
PAGE 13
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 TYPICAL CHARACTERISTICS 150 145 140 DOMINANT-TO-RECESSIVE LOOP TIME vs FREE-AIR TEMPERATURE (across VCC) t LOOP2 − Dominant-to-Recessive Loop Time − ns t LOOP1− Recessive-to-Dominant Loop Time − ns RECESSIVE-TO-DOMINANT LOOP TIME vs FREE-AIR TEMPERATURE (across VCC) S at 0 V, RL = 60 W, CL = 100 pF, Air Flow at 7 cf/m, TXD Input is a 125 kHz, 50% Duty Cycle Pulse VCC = 4.75 V 135 130 VCC = 5 V 125 VCC = 5.
PAGE 14
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) DRIVER HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT TA = 25 C, VCC = 5 V, S at 0 V, TXD Input is a 125 kHz 1% Duty Cycle Pulse -70 -60 -50 -40 -30 -20 -10 3 Dominant Driver Differential Output Voltage − V -0 1 S at 0 V, RL = 60 W, Air Flow at 7 cf/m, TXD Input is a 125 kHz 1% Duty Cycle Pulse 0.5 0 25 70 TA − Free-Air Temperature − °C Figure 16. Figure 17.
PAGE 15
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 TYPICAL CHARACTERISTICS (continued) TYPICAL ELECTROMAGNETIC EMISSIONS UP TO 50 MHZ (Peak Amplitude) TYPICAL ELECTROMAGNETIC IMMUNITY PERFORMANCE 80 dBm DB mV 60 40 20 0 0.1 Figure 20. Frequency Spectrum of Common-Mode Emissions 1 10 f − Frequency − MHz 100 1000 Figure 21.
PAGE 16
SN65HVD1050 SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 www.ti.com APPLICATION INFORMATION Thermal Shutdown The SN65HVD1050 has a thermal shutdown feature that turns off the driver outputs when the junction temperature nears 190°C. This shutdown prevents catastrophic failure from bus shorts, but does not protect the circuit from possible damage. The user should strive to maintain recommended operating conditions and not exceed absolute-maximum ratings at all times.
PAGE 17
SN65HVD1050 www.ti.com SLLS632B – DECEMBER 2005 – REVISED MARCH 2010 REVISION HISTORY Changes from Revision A (May 2007) to Revision B Page • Deleted sentence, "The device is also qualified for use in ISO 11898-2 automotive applications in accordance with AEC-Q100." and footnote, "The device is available with Q100 qualification as the SN65HVD1050Q." .............................. 1 • Changed VCC min/max range from 4.75-5.25V to 4.5-5.5V ................................................................
PAGE 18
PACKAGE OPTION ADDENDUM www.ti.
PAGE 19
PACKAGE OPTION ADDENDUM www.ti.
PAGE 20
PACKAGE MATERIALS INFORMATION www.ti.com 23-Nov-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SN65HVD1050DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD1050DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
PAGE 21
PACKAGE MATERIALS INFORMATION www.ti.com 23-Nov-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN65HVD1050DR SOIC D 8 2500 367.0 367.0 35.0 SN65HVD1050DR SOIC D 8 2500 367.0 367.0 35.
PAGE 22
PAGE 23
PAGE 24
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.