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TXD

GND

RXD

CANH

CANL

ref

SN65HVD1050-EP

www.ti.com

SLLS772A –DECEMBER 2006–REVISED OCTOBER 2009

EMC OPTIMIZED CAN TRANSCEIVER

Check for Samples :SN65HVD1050-EP

FEATURES

D PACKAGE

• Controlled Baseline

(TOP VIEW)

– One Assembly/Test Site, One Fabrication

Site

• Enhanced Diminishing Manufacturing Sources

(DMS) Support

• Enhanced Product-Change Notification

• Qualification Pedigree

(1)

DESCRIPTION/

• Improved Replacement for the TJA1050

ORDERING INFORMATION

• High Electromagnetic Immunity (EMI)

• Very Low Electromagnetic Emissions (EME) The SN65HVD1050 meets or exceeds the

specifications of the ISO 11898 standard for use in

• Meets or Exceeds the Requirements of

applications employing a controller area network

ISO 11898-2

(CAN). The device is also qualified for use in

• Bus-Fault Protection of –27 V to 40 V

automotive applications in accordance with

AEC-Q100.

(2)

• Dominant Time-Out Function

• Thermal Shutdown Protection

As a CAN transceiver, this device provides differential

transmit capability to the bus and differential receive

• Power-Up/Down Glitch-Free Bus Inputs and

capability to a CAN controller at signaling rates up to

Outputs

1 megabit per second (Mbps)

(3)

– High Input Impedance With Low V

Designed for operation in especially harsh

– Monotonic Outputs During Power Cycling

environments, the SN65HVD1050 features

cross-wire, overvoltage, and loss of ground protection

APPLICATIONS

from –27 V to 40 V, overtemperature protection, a

• Industrial Automation

–12-V to 12-V common-mode range, and withstands

– DeviceNET™ Data Buses (Vendor ID #806)

voltage transients from –200 V to 200 V, according to

ISO 7637.

• SAE J2284 High-Speed CAN for Automotive

Applications

Pin 8 provides for two different modes of operation:

• SAE J1939 Standard Data Bus Interface

high-speed or silent mode. The high-speed mode of

• ISO 11783 Standard Data Bus Interface

operation is selected by connecting S (pin 8) to

ground.

• NMEA 2000 Standard Data Bus Interface

(1) Component qualification in accordance with JEDEC and

industry standards to ensure reliable operation over an

extended temperature range. This includes, but is not limited

to, Highly Accelerated Stress Test (HAST) or biased 85/85, (2) The device is available with Q100 qualification as the

temperature cycle, autoclave or unbiased HAST, SN65HVD1050Q (Product Preview).

electromigration, bond intermetallic life, and mold compound (3) The signaling rate of a line is the number of voltage

life. Such qualification testing should not be viewed as transitions that are made, per second, expressed in the units

justifying use of this component beyond specified bps (bits per second).

performance and environmental limits. blk

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ORDERING INFORMATION

PART NUMBER PACKAGE MARKED AS ORDERING NUMBER

SN65HVD1050M SOIC-8 1050EP SN65HVD1050MDREP (reel)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2DeviceNET is a trademark of Open Devicenet Vendors Association, Inc.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (21 pages)

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SN65HVD1050-EP www.ti.
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SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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SN65HVD1050-EP www.ti.com SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 Electrostatic Discharge Protection over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS Human-Body Model (2) Electrostatic discharge (1) Charged-Device Model (3) UNIT Bus terminals and GND ±8 kV All pins ±4 kV All pins ±1.
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SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com Driver Electrical Characteristics over recommended operating conditions (unless otherwise noted) PARAMETER VO(D) Bus output voltage (dominant) VO(R) Bus output voltage (recessive) VOD(D) TEST CONDITIONS CANH CANL Differential output voltage (recessive) TYP MAX 2.9 3.4 4.5 (1) 0.
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SN65HVD1050-EP www.ti.
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SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com Thermal Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER PD TEST CONDITIONS MIN VCC = 5 V, TJ = 27°C, RL = 60 Ω, S at 0 V, Input to TXD a 500-kHz, 50% duty-cycle square wave, CL at RXD = 15 pF Average power dissipation TYP MAX UNIT 112 mW VCC = 5.
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SN65HVD1050-EP www.ti.com SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 PARAMETER MEASUREMENT INFORMATION IO(CANH) VO (CANH) TXD II VOD RL VO(CANH) + VO(CANL) 2 I I(S) S VI VOC I O(CANL) + VI(S) _ V O(CANL) Figure 1. Driver Voltage, Current, and Test Definition Dominant 3.5 V Recessive VO(CANH) 2.5 V VO(CANL) 1.5 V Figure 2. Bus Logic State Voltage Definitions CANH 0V TXD VOD 330 W +1% RL + _ S CANL −2 V 3 VTEST 3 7 V 330 W +1% Figure 3.
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SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) CANH RXD VI (CANH) IO VID V + VI (CANL) VIC = I (CANH) 2 VI (CANL) VO CANL Figure 5. Receiver Voltage and Current Definitions 3.5 V CANH VI V RXD 1.5 V tPLH CANL 1.5 V CL = 15 pF + 20% (See Note B) S 2.4 V IO I (See Note A) 2V VO tPHL 90% 0.7 VCC VO 10% VOH 0.3 VCC VOL tf tr A.
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SN65HVD1050-EP www.ti.com SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 DUT CANH TXD 0V CL S VI 60 W +1% 0V VOH CANL NOTE: CL = 100 pF includes instrumentation and fixture capacitance within ±20% RXD + VO _ VCC 50 % VI 15 pF +20% 50 % VO VOL ten NOTE: All VI input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 6 ns, Pulse Repetition Rate (PRR) = 25 kHz, 50% duty cycle Figure 7.
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SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com VCC VI TXD RL = 60 W +1% VI (See Note A) S 0V VOD CL (See Note B) VOD(D) VOD 900 mV 500 mV CANH 0V tdom A. All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns. Pulse Repetition Rate (PRR) = 500 Hz, 50% duty cycle. B. CL = 100 pF includes instrumentation and fixture capacitance within ±20%. Figure 10.
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SN65HVD1050-EP www.ti.com SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 DEVICE INFORMATION Table 4.
PAGE 12
SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com Equivalent Input and Output Schematic Diagrams TXD Input Vcc RXD Output Vcc 25 W 4.3 kW Output Input 6V 6V CANL Input CANH Input Vcc Vcc 10 kW 10 kW 20 kW 20 kW Input Input 10 kW 40 V 10 kW 40 V CANH and CANL Outputs S Input Vcc Vcc CANH 4.
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SN65HVD1050-EP www.ti.com SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 TYPICAL CHARACTERISTICS 150 145 140 DOMINANT-TO-RECESSIVE LOOP TIME vs FREE-AIR TEMPERATURE (Across VCC) t LOOP2 − Dominant-to-Recessive Loop Time − ns t LOOP1− Recessive-to-Dominant Loop Time − ns RECESSIVE-TO-DOMINANT LOOP TIME vs FREE-AIR TEMPERATURE (Across VCC) S at 0 V RL = 60 W CL = 100 pF Air Flow at 7 cf/m TXD Input is a 125-kHz 50% Duty Cycle Pulse VCC = 4.75 V 135 130 VCC = 5 V 125 VCC = 5.
PAGE 14
SN65HVD1050-EP SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 www.ti.com TYPICAL CHARACTERISTICS (continued) TA = 25°C VCC = 5 V S at 0 V TXD Input is a 125-kHz 1% Duty Cycle Pulse -70 -60 -50 -40 -30 -20 -10 -0 1 S at 0 V RL = 60 W Air Flow at 7 cf/m TXD Input is a 125-kHz 1% Duty Cycle Pulse 0.5 0 25 70 TA − Free-Air Temperature − °C Figure 16. Figure 17.
PAGE 15
SN65HVD1050-EP www.ti.com SLLS772A – DECEMBER 2006 – REVISED OCTOBER 2009 TYPICAL CHARACTERISTICS (continued) TYPICAL ELECTROMAGNETIC EMISSIONS UP TO 50 MHZ (Peak Amplitude) TYPICAL ELECTROMAGNETIC IMMUNITY PERFORMANCE 80 dBm DB mV 60 40 20 0 0.1 Figure 20. 1 10 f − Frequency − MHz 100 1000 Figure 21.
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PACKAGE OPTION ADDENDUM www.ti.
PAGE 17
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device SN65HVD1050MDREP Package Package Pins Type Drawing SOIC D 8 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2500 330.0 12.4 Pack Materials-Page 1 6.4 B0 (mm) K0 (mm) P1 (mm) 5.2 2.1 8.0 W Pin1 (mm) Quadrant 12.
PAGE 18
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN65HVD1050MDREP SOIC D 8 2500 367.0 367.0 35.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.