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FEATURES APPLICATIONS

GND

D PACKAGE

(TOP VIEW)

DESCRIPTION/ORDERING INFORMATION

SN65HVD10-EP , , SN65HVD11-EP

SN65HVD12-EP

SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007

www.ti.com

3.3 V RS-485 TRANSCEIVERS

• Digital Motor Control

• Controlled Baseline

• Utility Meters

– One Assembly/Test Site

• Chassis-to-Chassis Interconnects

– One Fabrication Site

• Electronic Security Stations

• Extended Temperature Performance of Up to

• Industrial Process Control

– 40 ° C to 125 ° C and – 55 ° C to 125 ° C

• Building Automation

• Enhanced Diminishing Manufacturing Sources

• Point-of-Sale (POS) Terminals and Networks

(DMS) Support

• Enhanced Product-Change Notification

• Qualification Pedigree

(1)

• Operates With a 3.3 V Supply

• Bus-Pin ESD Protection Exceeds 16 kV HBM

• 1/8 Unit-Load Option Available (Up to 256

Nodes on the Bus)

• Optional Driver Output Transition Times for

Signaling Rates of 1 Mbps, 10 Mbps, and

25 Mbps

(2)

• Meets or Exceeds the Requirements of ANSI

The SN65HVD10, SN65HVD11, and SN65HVD12

TIA/EIA-485-A

combine a 3-state differential line driver and

differential input line receiver that operate with a

• Bus-Pin Short Circuit Protection From – 7 V to

single 3.3 V power supply. They are designed for

12 V

balanced transmission lines and meet or exceed

• Low-Current Standby Mode . . . 1 μ A (Typ)

ANSI standard TIA/EIA-485-A and ISO 8482:1993.

• Open-Circuit, Idle-Bus, and Shorted-Bus

These differential bus transceivers are monolithic

integrated circuits designed for bidirectional data

Failsafe Receiver

communication on multipoint bus-transmission lines.

• Thermal Shutdown Protection

The drivers and receivers have active-high and

• Glitch-Free Power-Up and Power-Down

active-low enables respectively, that can be externally

Protection for Hot-Plugging Applications

connected together to function as direction control.

Low device standby supply current can be achieved

• SN75176 Footprint

by disabling the driver and the receiver.

(1) Component qualification in accordance with JEDEC and

industry standards to ensure reliable operation over an

The driver differential outputs and receiver differential

extended temperature range. This includes, but is not limited

inputs connect internally to form a differential

to, Highly Accelerated Stress Test (HAST) or biased 85/85,

temperature cycle, autoclave or unbiased HAST,

input/output (I/O) bus port that is designed to offer

electromigration, bond intermetallic life, and mold compound

minimum loading to the bus whenever the driver is

life. Such qualification testing should not be viewed as

disabled or V

= 0. These parts feature wide positive

justifying use of this component beyond specified

and negative common-mode voltage ranges, making

performance and environmental limits.

them suitable for party-line applications.

(2) The signaling rate of a line is the number of voltage

transitions that are made per second expressed in the units

bps (bits per second).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

UNLESS OTHERWISE NOTED this document contains

PRODUCTION DATA information current as of publication date.

Products conform to specifications per the terms of Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (25 pages)

PAGE 1
SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 3.3 V RS-485 TRANSCEIVERS FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • • • • • • • (1) (2) Controlled Baseline – One Assembly/Test Site – One Fabrication Site Extended Temperature Performance of Up to –40°C to 125°C and –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree (1) Operates With a 3.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 PACKAGE DISSIPATION RATINGS (1) (2) (3) PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR (1) ABOVE TA = 25°C TA = 70°C POWER RATING TA = 85°C POWER RATING TA = 125°C POWER RATING D (2) 597 mW 4.97 mW/°C 373 mW 298 mW 100 mW D (3) 990 mW 8.26 mW/°C 620 mW 496 mW 165 mW This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 RECOMMENDED OPERATING CONDITIONS MIN Supply voltage, VCC Voltage at any bus terminal (separately or common mode) VI or VIC High-level input voltage, VIH D, DE, RE Low-level input voltage, VIL D, DE, RE Differential input voltage, VID (see Figure 8) Driver High-level output current, IOH 3.6 V 12 V 2 VCC V 0 0.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 DRIVER SWITCHING CHARACTERISTICS over recommended operating free-air temperature range (unless otherwise noted) MIN TYP (1) MAX HVD10 5 8.5 16 HVD11 18 25 40 HVD12 135 200 330 HVD10 5 8.5 16 HVD11 18 25 40 HVD12 135 200 330 HVD10 3 4.5 11.5 10 20 30 HVD12 100 170 330 HVD10 3 4.5 11.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 RECEIVER SWITCHING CHARACTERISTICS over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT tPLH Propagation delay time, low-to-high level output HVD10 12.5 20 25 ns tPHL Propagation delay time, high-to-low level output HVD10 12.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 PARAMETER MEASUREMENT INFORMATION VCC DE II 375 Ω ±1% VCC IOA A DE B D 54 Ω ±1% VOD 0 or 3 V A 60 Ω ±1% VOD 0 or 3 V IOB + _ −7 V < V(test) < 12 V B VI VOB 375 Ω ±1% VOA Figure 2. Driver VOD Test Circuit and Voltage and Current Definitions VCC DE Input D Figure 3.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 PARAMETER MEASUREMENT INFORMATION (continued) 3V RL = 110 Ω ± 1% A 3V VI 1.5 V VI S1 D 1.5 V VO DE Input Generator ≈3V 50 Ω 0V B tPZL tPLZ ≈3V CL = 50 pF ±20% 0.5 V CL Includes Fixture and Instrumentation Capacitance VO 2.3 V VOL Generator: PRR = 500 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Zo = 50 Ω Figure 7.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 PARAMETER MEASUREMENT INFORMATION (continued) 3V 3V A DE 0 V or 3 V R D VO B RE Input Generator VI A 1 kΩ ± 1% S1 CL = 15 pF ±20% B CL Includes Fixture and Instrumentation Capacitance 50 Ω Generator: PRR = 500 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Zo = 50 Ω 3V VI 1.5 V 1.5 V 0V tPZH(1) tPHZ VOH −0.5 V VOH D at 3 V S1 to B 1.5 V VO ≈0V tPZL(1) tPLZ ≈3V VO 1.5 V VOL +0.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 PARAMETER MEASUREMENT INFORMATION (continued) 3V A 0 V or 1.5 V R B 1.5 V or 0 V RE Input Generator VI VO A 1 kΩ ± 1% S1 CL = 15 pF ±20% B CL Includes Fixture and Instrumentation Capacitance 50 Ω Generator: PRR = 100 kHz, 50% Duty Cycle, tr < 6 ns, tf < 6 ns, Zo = 50 Ω 3V 1.5 V VI 0V tPZH(2) VOH A at 1.5 V B at 0 V S1 to B 1.5 V VO GND tPZL(2) 3V 1.5 V VO A at 0 V B at 1.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 Function Tables abc DRIVER OUTPUTS INPUT D ENABLE DE A B H H H L L H L H X L Z Z Open H H L RECEIVER DIFFERENTIAL INPUTS VID = VA – VB ENABLE RE OUTPUT R VID ≤ –0.2 V L L –0.2 V < VID < –0.01 V L ? –0.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 TYPICAL CHARACTERISTICS HVD10 OR HVD12 HVD11 RMS SUPPLY CURRENT vs SIGNALING RATE RMS SUPPLY CURRENT vs SIGNALING RATE 70 RL = 54 Ω CL = 50 pF TA = 25°C RE at VCC DE at VCC I CC − RMS Supply Current − mA I CC − RMS Supply Current − mA 70 VCC = 3.6 V 60 50 VCC = 3 V VCC = 3.3 V 40 30 0 5 10 15 20 25 30 35 50 VCC = 3 V VCC = 3.3 V 40 2.5 Signaling Rate − Mbps Figure 13.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 TYPICAL CHARACTERISTICS (continued) HVD11 OR HVD12 HIGH-LEVEL OUTPUT CURRENT vs DRIVER HIGH-LEVEL OUTPUT VOLTAGE BUS INPUT CURRENT vs BUS INPUT VOLTAGE 150 80 I I − Bus Input Current − µ A 70 IOH − High-Level Output Current − mA 90 TA = 25°C DE at 0 V 60 50 VCC = 0 V 40 30 20 10 0 VCC = 3.3 V −10 −20 −30 TA = 25°C DE at VCC D at VCC VCC = 3.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 TYPICAL CHARACTERISTICS (continued) DRIVER OUTPUT CURRENT vs SUPPLY VOLTAGE −40 TA = 25°C DE at VCC D at VCC RL = 54 Ω I O − Driver Output Current − mA −35 −30 −25 −20 −15 −10 −5 0 0 0.50 1 1.50 2 2.50 3 3.50 VCC − Supply Voltage − V Figure 21.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 APPLICATION INFORMATION An example application for the HVD12 is illustrated in Figure 22. Two HVD12 transceivers are used to communicate data through a 2000 foot (600 m) length of Commscope 5524 category 5e+ twisted pair cable. The bus is terminated at each end by a 100 Ω resistor, matching the cable characteristic impedance. Figure 23 illustrates operation at a signaling rate of 250 kbps.
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SN65HVD10-EP,, SN65HVD11-EP SN65HVD12-EP www.ti.com SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 THERMAL CHARACTERISTICS OF IC PACKAGES Junction-to-Ambient Thermal Resistance (θJA) is defined as the difference in junction temperature to ambient temperature divided by the operating power.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 11-Apr-2013 Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant SN65HVD10MDREP SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD10QDREP SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 SN65HVD12IDREP SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) SN65HVD10MDREP SOIC D 8 2500 367.0 367.0 35.0 SN65HVD10QDREP SOIC D 8 2500 367.0 367.0 35.0 SN65HVD12IDREP SOIC D 8 2500 367.0 367.0 35.
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