Datasheet

 
   
  
SCES066G − JUNE 1996 − REVISED APRIL 2002
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D State-of-the-Art Advanced BiCMOS
Technology (ABT) Widebus Design for
2.5-V and 3.3-V Operation and Low
Static-Power Dissipation
D Support Mixed-Mode Signal Operation (5-V
Input and Output Voltages With 2.3-V to
3.6-V V
CC
)
D Typical V
OLP
(Output Ground Bounce)
<0.8 V at V
CC
= 3.3 V, T
A
= 25°C
D High Drive (−32/64 mA at 3.3-V V
CC
)
D I
off
and Power-Up 3-State Support Hot
Insertion
D Use Bus Hold on Data Inputs in Place of
External Pullup/Pulldown Resistors to
Prevent the Bus From Floating
D Flow-Through Architecture Facilitates
Printed Circuit Board Layout
D Distributed V
CC
and GND Pins Minimize
High-Speed Switching Noise
D Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
description
The ’ALVTH16245 devices are 16-bit (dual-octal)
noninverting 3-state transceivers designed for
2.5-V or 3.3-V V
CC
operation, but with the
capability to provide a TTL interface to a 5-V
system environment.
These devices can be used as two 8-bit transceivers or one 16-bit transceiver. They allow data transmission
from the A bus to the B bus or from the B bus to the A bus, depending on the logic level at the direction-control
(DIR) input. The output-enable (OE
) input can be used to disable the device so that the buses are effectively
isolated.
These devices are fully specified for hot-insertion applications using I
off
and power-up 3-state. The I
off
circuitry
disables the outputs, preventing damaging current backflow through the device when it is powered down. The
power-up 3-state circuitry places the outputs in the high-impedance state during power up and power down,
which prevents driver conflict.
Active bus-hold circuitry is provided to hold unused or floating data inputs at a valid logic level. Use of pullup
or pulldown resistors with the bus-hold circuitry is not recommended.
When V
CC
is between 0 and 1.2 V, the devices are in the high-impedance state during power up or power down.
However, to ensure the high-impedance state above 1.2 V, OE
should be tied to V
CC
through a pullup resistor;
the minimum value of the resistor is determined by the current-sinking capability of the driver.
Copyright  2002, Texas Instruments Incorporated
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Widebus is a trademark of Texas Instruments.
SN54ALVTH16245 . . . WD PACKAGE
SN74ALVTH16245 . . . DGG, DGV, OR DL PACKAGE
(TOP VIEW)
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1DIR
1B1
1B2
GND
1B3
1B4
V
CC
1B5
1B6
GND
1B7
1B8
2B1
2B2
GND
2B3
2B4
V
CC
2B5
2B6
GND
2B7
2B8
2DIR
1OE
1A1
1A2
GND
1A3
1A4
V
CC
1A5
1A6
GND
1A7
1A8
2A1
2A2
GND
2A3
2A4
V
CC
2A5
2A6
GND
2A7
2A8
2OE