Datasheet
1OE
1A
1B
2OE
2A
2B
GND
V
CC
4OE
4A
4B
3OE
3A
3B
4
6
3
5
2
11
13
10
12
9
7 8
14
1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OE
1A
1B
2OE
2A
2B
GND
V
CC
4OE
4A
4B
3OE
3A
3B
SN74CB3T3125
www.ti.com
SCDS120B –FEBRUARY 2003–REVISED AUGUST 2012
QUADRUPLE FET BUS SWITCH
2.5-V/3.3-V LOW-VOLTAGE BUS SWITCH WITH 5-V-TOLERANT LEVEL SHIFTER
Check for Samples: SN74CB3T3125
1
FEATURES
• Output Voltage Translation Tracks V
CC
• Latch-Up Performance Exceeds 250 mA Per
JESD 17
• Supports Mixed-Mode Signal Operation On All
Data I/O Ports • ESD Performance Tested Per JESD 22
– 5-V Input Down to 3.3-V Output-Level Shift – 2000-V Human-Body Model
With 3.3-V V
CC
(A114-B, Class II)
– 5-V/3.3-V Input Down to 2.5-V Output-Level – 1000-V Charged-Device Model (C101)
Shift With 2.5-V V
CC
• Supports Digital Applications: Level
• 5-V-Tolerant I/Os With Device Powered Up or Translation, USB Interface, Bus Isolation
Powered Down
• Ideal for Low-Power Portable Equipment
• Bidirectional Data Flow, With Near-Zero
Propagation Delay
DGV OR PW PACKAGE
(TOP VIEW)
• Low ON-State Resistance (r
on
) Characteristics
(r
on
= 5 Ω Typ)
• Low Input/Output Capacitance Minimizes
Loading (C
io(OFF)
= 4.5 pF Typ)
• Data and Control Inputs Provide Undershoot
Clamp Diodes
• Low Power Consumption (I
CC
= 20 μA Max)
• V
CC
Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
RGY PACKAGE
• Control Inputs Can Be Driven by TTL or 5-
(TOP VIEW)
V/3.3-V CMOS Outputs
• I
off
Supports Partial-Power-Down Mode
Operation
DESCRIPTION
The SN74CB3T3125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r
on
), allowing
for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by
providing voltage translation that tracks V
CC
. The SN74CB3T3125 supports systems using 5-V TTL, 3.3-V
LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2003–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.