Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose QFN 16 (3x3)

FEATURES APPLICATIONS

DESCRIPTION

THS4302

100 Ω

49.9 Ω

22 µF 47 pF 0.1 µF

S+

50 Ω Source

APPLICATION CIRCUIT

+ 22 µF 47 pF 0.1 µF

S-

10 M 100 M 1 G 10 G

f - Frequency - Hz

Small Signal Gain - dB

SMALL SIGNAL FREQUENCY RESPONSE

= 200 mV

= 100 Ω

= 5 V

30.1 Ω

FB = Ferrite Bead

THS4302

SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006

www.ti.com

WIDEBAND FIXED-GAIN AMPLIFIER

• Wideband Signal Processing

• Fixed-Gain Amplifier, 5 V/V (14 dB)

• Wireless Transceivers

• Wide Bandwidth: 2.4 GHz

• IF Amplifier

• High Slew Rate: 5500 V/ μ s

• ADC Preamplifier

• Low Total Input Referred Noise: 2.8 nV/ √ Hz

• DAC Output Buffers

• Low Distortion

• Test, Measurement, and Instrumentation

– HD

: -86 dBc at 30 MHz

• Medical and Industrial Imaging

– HD

: -81 dBc at 70 MHz

– IMD

: -88 dBc at 100 MHz

– OIP

: 39 dBm at 100 MHz

The THS4302 device is a wideband, fixed-gain

– IMD

: -73 dBc at 300 MHz

amplifier that offers high bandwidth, high slew rate,

low noise, and low distortion. This combination of

– OIP

: 32 dBm at 300 MHz

specifications enables analog designers to transcend

• High Output Drive: ± 180 mA

current performance limitations and process analog

• Power Supply Voltage: 3 V or 5 V

signals at much higher speeds than previously

possible with closed-loop, complementary amplifier

designs. This device is offered in a 16-pin leadless

package and incorporates a power-down mode for

quiescent power savings.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2 PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (26 pages)

PAGE 1
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 WIDEBAND FIXED-GAIN AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • 1 2 • • Fixed-Gain Amplifier, 5 V/V (14 dB) Wide Bandwidth: 2.4 GHz High Slew Rate: 5500 V/μs Low Total Input Referred Noise: 2.
PAGE 2
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
PAGE 3
THS4302 www.ti.
PAGE 4
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 ELECTRICAL CHARACTERISTICS (continued) THS4302 (Gain = +5 V/V) Specifications: VS = 5 V, RL = 100 Ω, (unless otherwise noted) TYP PARAMETER TEST CONDITIONS OVERTEMPERATURE 25°C 25°C 0°C to 70°C -40°C to 85°C UNITS MIN/ TYP/ MAX INPUT CHARACTERISTICS Common-mode input range 0.5/4.5 1/4 1.1/3.9 1.2/3.8 V Min Common-mode rejection ratio VCM = 2 V to 3 V 60 52 50 50 dB Min Input resistance Noninverting input 1.
PAGE 5
THS4302 www.ti.
PAGE 6
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 Typical Test Data S-Parameter (Measured using standard THS4302EVM, edge number 6443548, with VS = 5 V in a 50-Ω test system) Frequency MHz S11 (dB) S11 (Ang) S21 (dB) S21 (Ang) S12 (dB) S12 (Ang) S22 (dB) 1 -55.86328 -3.728516 14.10889 -0.093384 -96.26953 20.78809 -70.32422 S22 (Ang) 122.5 2 -55.75781 -4.832764 14.11621 -0.109863 -98.18359 -120.6758 -65.65234 97.16016 10 -53.0293 -29.01563 14.11035 -0.
PAGE 7
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 TYPICAL THS4302 CHARACTERISTICS (5 V) (continued) SLEW RATE vs OUTPUT VOLTAGE HARMONIC DISTORTION vs FREQUENCY −50 RL = 100 Ω VS = 5 V −60 Harmonic Distortion − dBc 5000 Fall 4000 Rise 3000 2000 −70 HD2 −80 −90 HD3 0 −80 HD2 −90 HD3 −100 0.5 1 1.5 2 −110 2.5 −110 1 10 f − Frequency − MHz VO − Output Voltage − VPP Figure 5. Figure 6.
PAGE 8
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 TYPICAL THS4302 CHARACTERISTICS (5 V) (continued) THIRD-ORDER OUTPUT INTERCEPT POINT vs FREQUENCY 50 Source 35 VO = 1 VPP Envelope 31 29 Tone Spacing = 200 kHz To 50-Ω Load, Add 3dB to Refer To Amplifier Output 27 10 10 In Vn 100 200 300 400 500 100 1k f − Frequency − MHz 0.2 50 0.2 0.4 0.6 0.8 t − Time − ns RL = 100 Ω f= 1 MHz VS = 5 V 2.5 2.25 2 1.75 Falling Edge 35 TA = −40°C 30 25 20 15 10 0 0.6 0.8 1 1.2 1.
PAGE 9
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 TYPICAL THS4302 CHARACTERISTICS (5 V) (continued) COMMON-MODE REJECTION RATIO vs INPUT COMMON-MODE RANGE PSRR− 75 65 CMMR 60 55 PSRR+ 50 45 VS = 5 V 40 −40−30−20−10 0 10 20 30 40 50 60 70 80 90 Case Temperature − °C VS = 5 V 60 50 40 30 20 10 VS = 5 V 0 −10 0 1 3 4 4 3 2 1 0 −40−30−20−10 0 10 20 30 40 50 60 70 80 90 5 VICR − Input Common-Mode Voltage Range − V Case Temperature − °C Figure 23. Figure 24.
PAGE 10
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 TYPICAL THS4302 CHARACTERISTICS (5 V) (continued) POWER-DOWN OUTPUT IMPEDANCE vs FREQUENCY 2 100 VS = 5 V 1M 10 M 100 M 1G f − Frequency − Hz 1 50 0 40 −1 30 −2 20 −3 RL = 100 Ω VS = 5 V 10 −4 0 −5 −10 −6 −15 0 15 30 45 t − Time − µs Figure 31.
PAGE 11
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 TYPICAL THS4302 CHARACTERISTICS (3 V) (continued) S-PARAMETER vs FREQUENCY RG C −20 −30 − + 50 Ω Source 3.5 S22 50 Ω 50 Ω VOS − Input Offset Voltage − mV S−Parameter − dB −10 50 Ω −40 −50 S11 −60 S12 −70 −80 −90 3 10 M 100 M 1G VS = 3 V 2.5 2 1.5 1 0.
PAGE 12
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 APPLICATION INFORMATION High-Speed Operational amplifiers The THS4302 fixed-gain operational amplifier set new performance levels, combining low distortion, high slew rates, low noise, and a gain bandwidth in excess of 2 GHz. To achieve the full performance of the amplifier, careful attention must be paid to printed-circuit board layout and component selection.
PAGE 13
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 APPLICATION CIRCUITS VS+ Driving an Analog-to-Digital Converter With the THS4302 + FB 22 µF 47 pF 0.1 µF 30.1 Ω Rf Rg 50-Ω Source *2.5 V VI _ + VO THS4302 100 Ω 49.9 Ω The THS4302 amplifier can be used to drive highperformance analog-to-digital converters. Two example circuits are presented below. The first circuit uses a wideband transformer to convert a single-ended input signal into a differential signal.
PAGE 14
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 VS+ + FB 22 µF 47 pF 0.1 µF 30.1 Ω Rf Rg 50-Ω Source _ + *2.5 V VI THS4302 The Typical Characteristics show the recommended isolation resistor vs capacitive load and the resulting frequency response at the load. Parasitic capacitive loads greater than 2 pF can begin to degrade the performance of the THS4302. Long PC board traces, unmatched cables, and connections to multiple devices can easily cause this value to be exceeded.
PAGE 15
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 when they are not properly terminated to the ground plane over the area and along the perimeter of the power plane by high frequency capacitors. Doing so ensures that there are no power plane resonances in the needed frequency range. Values used are in the range of 2 pF - 50 pF, depending on the frequencies to be suppressed, with numerous vias for each. Using 0402 or smaller component sizes is recommended.
PAGE 16
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 possible is recommended. 3. Careful selection and placement of external components preserves the high frequency performance of the THS4302. Resistors should be a low reactance type. Surface-mount resistors work best and allow a tighter overall layout. Axially-leaded parts do not provide good high frequency performance, because they have ~0.8 nH of inductance for every mm of current path length.
PAGE 17
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 The PowerPAD package represents a breakthrough in combining the small area and ease of assembly of surface mount with the heretofore awkward mechanical methods of heatsinking. DIE Side View (a) DIE End View (b) Bottom View (c) Figure 49. Views of Thermally Enhanced Package Although there are many ways to properly heatsink the PowerPAD package, the following steps illustrate the recommended approach. 0.144 0.049 0.012 Pin 1 0.0095 0.
PAGE 18
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 THERMAL ANALYSIS The THS4302 device does not incorporate automatic thermal shutoff protection, so the designer must take care to ensure that the design does not violate the absolute maximum junction temperature of the device. Failure may result if the absolute maximum junction temperature of 150°C is exceeded. The thermal characteristics of the device are dictated by the package and the PC board.
PAGE 19
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 VS+ FB2 J3 C2 22 mF + 12 11 10 13 NC 14 C4 0.1 mF R5 30.1 W _ PD R1 49.9 Ω 47 pF 9 + J6 C9 * Rf Rg J1 VI C6 U1 8 7 6 5 R2 49.9 W 16 J2 VO R3 * C1 1 2 1 mF VS- 3 C7 * J4 C3 22 mF 4 C8 47 pF FB1 + C5 0.1 mF R4 30.1 W * = Not populated Figure 52. Typical THS4302 EVM Circuit Configuration Figure 53. THS4302EVM Layout (Top Layer and Silkscreen Layer) Figure 54.
PAGE 20
THS4302 www.ti.com SLOS403H – OCTOBER 2002 – REVISED AUGUST 2006 Table 1. BILL OF MATERIALS - THS4302RGT EVM ITEM DESCRIPTION SMD SIZE REFERENCE DESIGNATOR PCB QUANTITY MANUFACTURER'S PART NUMBER 1206 FB1, FB2 2 (Steward) HI1206N800R-00 D C2, C3 2 (AVX) TAJD226K025R (AVX) 08053G105ZAT2A 1 Bead, ferrite, 3 A, 80 Ω 2 Cap. 22 μF, tantalum, 25 V, 10% 3 Cap. 1 μF, ceramic, 25 V, Y5V 0805 C1 1 4 Open 0402 C6, C7 2 5 Cap.
PAGE 21
PACKAGE OPTION ADDENDUM www.ti.
PAGE 22
PACKAGE OPTION ADDENDUM www.ti.
PAGE 23
PACKAGE MATERIALS INFORMATION www.ti.com 18-May-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant THS4302RGTR QFN RGT 16 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 THS4302RGTT QFN RGT 16 250 180.0 12.4 3.3 3.3 1.1 8.0 12.
PAGE 24
PACKAGE MATERIALS INFORMATION www.ti.com 18-May-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) THS4302RGTR QFN RGT 16 3000 338.1 338.1 20.6 THS4302RGTT QFN RGT 16 250 210.0 185.0 35.
PAGE 25
PAGE 26
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.