Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SOIC 8

DGN−8

DDA−8D−8

−V

(Bias)

Photodiode Circuit

THS4631

www.ti.com

SLOS451B –DECEMBER 2004– REVISED AUGUST 2011

HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND

FET-INPUT OPERATIONAL AMPLIFIER

Check for Samples: THS4631

FEATURES

DESCRIPTION

The THS4631 is a high-speed, FET-input operational

• High Bandwidth:

amplifier designed for applications requiring wideband

– 325 MHz in Unity Gain

operation, high-input impedance, and high-power

– 210 MHz Gain Bandwidth Product

supply voltages. By providing a 210-MHz gain

bandwidth product, ±15-V supply operation, and

• High Slew Rate:

100-pA input bias current, the THS4631 is capable of

– 900 V/µs (G = 2)

simultaneous wideband transimpedance gain and

– 1000 V/µs (G = 5)

large output signal swing. The fast 1000 V/µs slew

rate allows for fast settling times and good harmonic

• Low Distortion of –76 dB, SFDR at 5 MHz

distortion at high frequencies. Low current and

• Maximum Input Bias Current: 100 pA

voltage noise allow amplification of extremely

• Input Voltage Noise: 7 nV/√Hz

low-level input signals while still maintaining a large

signal-to-noise ratio.

• Maximum Input Offset Voltage: 500 µV at 25°C

• Low Offset Drift: 2.5 µV/°C

The characteristics of the THS4631 make it ideally

suited for use as a wideband photodiode amplifier.

• Input Impedance: 10

|| 3.9 pF

Photodiode output current is a prime candidate for

• Wide Supply Range: ± 5 V to ± 15 V

transimpedance amplification as shown below. Other

• High Output Current: 95 mA

potential applications include test and measurement

systems requiring high-input impedance, ADC and

APPLICATIONS

DAC buffering, high-speed integration, and active

filtering.

• Wideband Photodiode Amplifier

The THS4631 is offered in an 8-pin SOIC (D), and

• High-Speed Transimpedance Gain Stage

the 8-pin SOIC (DDA) and MSOP (DGN) with

• Test and Measurement Systems

PowerPAD™ package.

• Current-DAC Output Buffer

Related FET Input Amplifier Products

• Active Filtering

SLEW VOLTAGE

• High-Speed Signal Integrator

GBWP MINIMUM

DEVICE RATE NOISE

(V) (MHz) GAIN

(V/µS) (nV/√Hz)

• High-Impedance Buffer

OPA656 ±5 230 290 7 1

OPA657 ±5 1600 700 4.8 7

OPA627 ±15 16 55 4.5 1

THS4601 ±15 180 100 5.4 1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2PowerPad is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (34 pages)

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D−8 DDA−8 DGN−8 THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER Check for Samples: THS4631 FEATURES DESCRIPTION • The THS4631 is a high-speed, FET-input operational amplifier designed for applications requiring wideband operation, high-input impedance, and high-power supply voltages.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com TYPICAL CHARACTERISTICS (±15 V GRAPHS) TA = 25°C, G = 2, RF = 499 Ω, RL = 1 kΩ, Unless otherwise noted. +15 V Test Data Mesurement Point 50 Ω Source + 49.9 Ω 953 Ω 50 Ω Test Equipment THS4631 _ 49.9 Ω −15 V RF RG 499 Ω 499 Ω CF SMALL SIGNAL FREQUENCY RESPONSE SMALL SIGNAL FREQUENCY RESPONSE 6.3 VO = 200 mVPP 0 G = 5, RF = 499 Ω, RG = 124 Ω 105 MHz G = 2, RF = 499 Ω, RG = 499 Ω 7 6 5 CF = 8.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com TYPICAL CHARACTERISTICS (±15 V GRAPHS) (continued) TA = 25°C, G = 2, RF = 499 Ω, RL = 1 kΩ, Unless otherwise noted. SECOND ORDER HARMONIC DISTORTION vs FREQUENCY THIRD ORDER HARMONIC DISTORTION vs FREQUENCY -50 -30 −50 RL = 100 Ω −60 −70 RL = 1 kΩ −80 -40 -50 -70 -80 -90 RL = 1 kW 1M 10 M -75 -85 -100 10 M 100 M 0 0.5 1 1.5 2 2.5 3 3.5 VO - Output Voltage Swing - VPP Figure 7. Figure 8. Figure 9.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com TYPICAL CHARACTERISTICS (±15 V GRAPHS) (continued) TA = 25°C, G = 2, RF = 499 Ω, RL = 1 kΩ, Unless otherwise noted. INPUT OFFSET CURRENT vs TEMPERATURE INPUT OFFSET VOLTAGE vs TEMPERATURE OUTPUT VOLTAGE vs TEMPERATURE 300 250 13.55 150 125 100 75 50 DDA Package 13.45 100 D Package 0 −200 13.3 VO− 13.25 DGN Package −300 25 0 −40−30−20−10 0 10 20 30 40 50 60 70 80 90 35 45 55 65 75 13.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com TYPICAL CHARACTERISTICS (±15 V GRAPHS) (continued) TA = 25°C, G = 2, RF = 499 Ω, RL = 1 kΩ, Unless otherwise noted. SETTLING TIME 1.25 0.25 G = −1, CF = 4.7 pF 0 −0.25 −0.5 −0.75 Falling 1.5 1 0.5 G = −1, CF = 4.7 pF 0 −0.5 −1 −1.5 −1 −2 −1.25 −2.5 Falling 5 10 15 20 25 30 35 0 40 5 10 15 0 25 30 35 −1 Output −10 −2 −15 −3 40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com APPLICATION INFORMATION INTRODUCTION The THS4631 is a high-speed, FET-input operational amplifier. The combination of: high gain bandwidth product of 210 MHz, high slew rate of 1000 V/µs, and trimmed dc precision makes the device an excellent design option for a wide variety of applications, including test and measurement, optical monitoring, transimpedance gain circuits, and high-impedance buffers.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 1 ) p RF G B P C + F Ǹǒ Ǔ 1 p RF G B P 2 ) www.ti.com 4C S 2 AOL Gain p RF G B P −20 dB/ Decade (1) Once the optimal feedback capacitor has been selected, the transimpedance bandwidth can be calculated with Equation 2. F *3dB + Ǹ 20 dB/Decade Rate-of-Closure Noise Gain GBP GBP 2 p RF ǒC S ) CFǓ 20 dB/ Decade (2) 0 f CI(CM) + CI(DIFF) CD RF CF CS = CI(CM) + CI(DIFF) + CP + CD A.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com Table 1. Transimpedance Performance Summary for Various Configurations (continued) 10-kΩ TRANSIMPEDANCE RESPONSES Transimpedance Gain − dB 85 CS = 18 PF CF = 2 PF 80 CS = 47 PF CF = 2.2 PF 75 CS = 100 PF CF = 3 PF 70 65 is difficult to measure the frequency response with traditional laboratory equipment because the circuit requires a current as an input rather than a voltage.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com such that the corner frequency of the transconductance network is much less than the transimpedance bandwidth of the circuit. Choosing this corner frequency properly leads to more accurate measurements of the transimpedance bandwidth. If the interface circuit corner frequency is too close to the bandwidth of the circuit, determining the power level in the flatband is difficult.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com SUMMARY OF KEY DECISIONS IN TRANSIMPEDANCE DESIGN The following is a simplified process for basic transimpedance circuit design. This process gives a start to the design process, though it does ignore some aspects that may be critical to the circuit. STEP 1: Determine the capacitance of the source. STEP 2: Calculate the total source capacitance, including the amplifier input capacitance, CI(CM) and CI(DIFF).
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com values dominate the noise of the system. Although the THS4631 JFET input stage is ideal for high-source impedance because of the low-bias currents, the system noise and bandwidth is limited by a high-source (RS) impedance.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com • impedance. If the 6-dB attenuation of a doubly terminated transmission line is unacceptable, a long trace can be series-terminated at the source end only. Treat the trace as a capacitive load in this case. This does not preserve signal integrity or a doubly-terminated line.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 5. 6. 7. 8. POWER DISSIPATION AND THERMAL CONSIDERATIONS To maintain maximum output capabilities, the THS4631 does not incorporate automatic thermal shutoff protection. The designer must take care to ensure that the design does not violate the absolute maximum junction temperature of the device. Failure may result if the absolute maximum junction temperature of 150°C is exceeded.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com Results are with no air flow and PCB size = 3" x 3 " θJA = 58.4°C/W for the 8-pin MSOP with PowerPAD (DGN). θJA = 98°C/W for the 8-pin SOIC high-K test PCB (D). θJA = 158°C/W for the 8-pin MSOP with PowerPAD, without solder. When determining whether or not the device satisfies the maximum power dissipation requirement, it is important to not only consider quiescent power dissipation, but also dynamic power dissipation.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com BILL OF MATERIALS Table 2. THS4631DDA EVM ITEM DESCRIPTION SMD SIZE REFERENCE DESIGNATOR PCB QUANTITY 1 CAP, 2.2 µF, CERAMIC, X5R, 25 V 1206 C3, C6 2 (AVX) 12063D225KAT2A 4 CAP, 0.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com Figure 50.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com ADDITIONAL REFERENCE MATERIAL • • • • • • • PowerPAD Made Easy, application brief (SLMA004) PowerPAD Thermally Enhanced Package, technical brief (SLMA002) Noise Analysis of FET Transimpedance Amplifiers, application bulletin, Texas Instruments Literature Number SBOA060. Tame Photodiodes With Op Amp Bootstrap, application bulletin, Texas Instruments Literature Number SBBA002.
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THS4631 SLOS451B – DECEMBER 2004 – REVISED AUGUST 2011 www.ti.com REVISION HISTORY Changes from Original (December 2004) to Revision A Page • Changed the Related FET Input Amplifier Products table .................................................................................................... 1 • Changed the Differential input resistance value From: 109 || 6.5 To: 109 || 3.9 ...................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 18-Oct-2013 (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device.
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PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant THS4631DGNR MSOPPower PAD DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 THS4631DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) THS4631DGNR MSOP-PowerPAD DGN 8 2500 364.0 364.0 27.0 THS4631DR SOIC D 8 2500 367.0 367.0 35.
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