Datasheet

   
   
 
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D B Grade Is 100% Tested for Noise
30 nV/Hz
Max at f = 10 Hz
12 nV/Hz
Max at f = 1 kHz
D Low Input Offset Voltage . . . 500 µV Max
D Excellent Offset Voltage Stability
With Temperature . . . 0.5 µV/°C Typ
D Rail-to-Rail Output Swing
D Low Input Bias Current
1 pA Typ at T
A
= 25°C
D Common-Mode Input Voltage Range
Includes the Negative Rail
D Fully Specified For Both Single-Supply and
Split-Supply Operation
description
The TLC220x, TLC220xA, TLC220xB, and
TLC220xY are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOS process. These devices combine the
noise performance of the lowest-noise JFET
amplifiers with the dc precision available
previously only in bipolar amplifiers. The
Advanced LinCMOS process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
The combination of excellent DC and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of −55°C to 125°C.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated. All other trademarks are the property of their respective owners.
Copyright 1997−2008, Texas Instruments Incorporated
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1 10 100
Vn − Equivalent Input Noise Voltage − nV/ Hz
f − Frequency − Hz
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
vs
FREQUENCY
60
1 k 10 k
50
40
30
20
10
0
V
DD
= 5 V
R
S
= 20
T
A
= 25°C
Hz
V
n
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications o
f
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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