Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SOIC 8

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

SLOS001F – JULY 1983 – REVISED MARCH 2001

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Wide Range of Supply Voltages

1.4-V to 16-V

True Single-Supply Operation

Common-Mode Input Voltage Range

Includes the Negative Rail

Low Noise . . . 30 nV/√Hz Typ at 1-kHz

(High Bias)

ESD Protection Exceeds 2000 V Per

MIL-STD-833C, Method 3015.1

description

The TLC251C, TLC251AC, and TLC251BC are

low-cost, low-power programmable operational

amplifiers designed to operate with single or dual

supplies. Unlike traditional metal-gate CMOS

operational amplifiers, these devices utilize Texas

Instruments silicon-gate LinCMOS process,

giving them stable input offset voltages without

sacrificing the advantages of metal-gate CMOS.

This series of parts is available in selected grades of input offset voltage and can be nulled with one external

potentiometer. Because the input common-mode range extends to the negative rail and the power consumption

is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A

bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the

application. The series features operation down to a 1.4-V supply and is stable at unity gain.

These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures

at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised

in handling these devices as exposure to ESD may result in a degradation of the device parametric

performance.

Because of the extremely high input impedance and low input bias and offset currents, applications for the

TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any

circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective

use of these devices. Many features associated with bipolar technology are available with LinCMOS

operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible

equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.

In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers

can have software-controlled performance and power consumption. The TLC251C series is well suited to solve

the difficult problems associated with single battery and solar cell-powered applications.

The TLC251C series is characterized for operation from 0°C to 70°C.

AVAILABLE OPTIONS

max

PACKAGED DEVICES

CHIP FORM

max

AT 25°C

SMALL OUTLINE

(D)

PLASTIC DIP

(P)

CHIP

FORM

(Y)

10 mV TLC251CD TLC251CP TLC251Y

0°C to 70°C

5 mV TLC251ACD TLC251ACP —

2 mV TLC251BCD TLC251BCP —

The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are

tested at 25°C.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

LinCMOS is a trademark of Texas Instruments.

OFFSET N1

IN–

IN+

DD–

/GND

BIAS SELECT

OUT

OFFSET N2

D OR P PACKAGE

(TOP VIEW)

symbol

–

OUT

BIAS SELECT

IN+

IN–

OFFSET N1

OFFSET N2

Summary of content (22 pages)

PAGE 1
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 D D D D D Wide Range of Supply Voltages 1.4-V to 16-V True Single-Supply Operation Common-Mode Input Voltage Range Includes the Negative Rail Low Noise . . . 30 nV/√Hz Typ at 1-kHz (High Bias) ESD Protection Exceeds 2000 V Per MIL-STD-833C, Method 3015.
PAGE 2
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 schematic VDD 7 Current Control IN + IN – 3 ESDProtective Network 2 ESDProtective Network ESDProtective Network 8 BIAS SELECT 6 OFFSET N1 1 OFFSET N2 5 VDD – /GND 2 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 OUT
PAGE 3
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TLC251Y chip information These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
PAGE 4
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 5
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 HIGH-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA† VDD = 5 V TYP MAX MIN 25°C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.
PAGE 6
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 HIGH-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ, kΩ CL = 20 pF VI(PP) ( ) = 2.
PAGE 7
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 MEDIUM-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA† VDD = 5 V TYP MAX MIN 25°C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.
PAGE 8
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 MEDIUM-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ kΩ, CL = 20 pF VI(PP) ( ) = 2.
PAGE 9
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 LOW-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA† VDD = 5 V TYP MAX MIN 25°C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.
PAGE 10
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 LOW-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ MΩ, CL = 20 pF VI(PP) ( ) = 2.
PAGE 11
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 1.4 V TA‡ TEST CONDITIONS† PARAMETER BIAS TLC251C, TLC251AC, TLC251BC MIN 25°C TLC251C VIO Input offset voltage TLC251AC Full range 2V VO = 0 0.
PAGE 12
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 electrical characteristics, VDD = 5 V, TA = 25°C TLC251Y PARAMETER TEST CONDITIONS HIGH-BIAS MODE MIN VO = 1.4 V, VIC = 0 V, RS = 50 Ω, MEDIUM-BIAS MODE TYP MAX 1.1 10 MIN LOW-BIAS MODE TYP MAX 1.1 10 MIN UNIT TYP MAX 1.
PAGE 13
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 operating characteristics, VDD = 5 V, TA = 25°C TLC251Y PARAMETER HIGH-BIAS MODE TEST CONDITIONS MIN TYP MEDIUM-BIAS MODE MAX MIN TYP LOW-BIAS MODE MAX MIN TYP UNIT MAX SR Slew rate at unity gain RL†, CL = 20 pF VI(PP) = 1 V VI(PP) = 2.5 V 3.6 0.43 0.03 2.9 0.40 0.
PAGE 14
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS SUPPLY CURRENT vs SUPPLY VOLTAGE SUPPLY CURRENT vs BIAS-SELECT VOLTAGE 10000 10000 VO = VIC = 0.2 VDD No Load TA = 25°C 1000 I DD – Supply Current – µ A I DD – Supply Current – µ A VO = VIC = 0.2 VDD No Load TA = 25°C VDD = 16 V 100 VDD = 4 V VDD = 1.4 V 10 1 0.
PAGE 15
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS LOW-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 1 MΩ TA = 25°C 106 105 0° 30° AVD (left scale) 104 60° 103 90° Phase Shift (right scale) 102 120° 101 150° 1 180° Phase Shift A VD – Differential Voltage Amplification 107 0.1 0.
PAGE 16
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS HIGH-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 10 kΩ TA = 25°C 106 105 0° 30° 104 60° Phase Shift (right scale) 103 90° 102 120° Phase Shift A VD – Differential Voltage Amplification 107 AVD (left scale) 101 150° 1 180° 0.
PAGE 17
TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F – JULY 1983 – REVISED MARCH 2001 APPLICATION INFORMATION using BIAS SELECT The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three IDD conditions (10, 150, and 1000 µA typical). This allows the user to trade-off power and ac performance. As shown in the typical supply current (IDD) versus supply voltage (VDD) curves (Figure 4), the IDD varies only slightly from 4 V to 16 V.
PAGE 18
PACKAGE OPTION ADDENDUM www.ti.
PAGE 19
PACKAGE OPTION ADDENDUM www.ti.com (3) 30-Jul-2011 MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information.
PAGE 20
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TLC251CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLC251CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
PAGE 21
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLC251CDR SOIC D 8 2500 340.5 338.1 20.6 TLC251CDR SOIC D 8 2500 367.0 367.0 35.
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