TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 D D D D D D D, P, OR PW PACKAGE (TOP VIEW) A-Suffix Versions Offer 5-mV VIO B-Suffix Versions Offer 2-mV VIO Wide Range of Supply Voltages 1.4 V to 16 V True Single-Supply Operation Common-Mode Input Voltage Includes the Negative Rail Low Noise . . .
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 description (continued) Because of the extremely high input impedance and low input bias and offset currents, applications for the TLC252/ 25_2 series include many areas that have previously been limited to BIFET and NFET product types.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 TLC252Y, TLC25L2Y, and TLC25M2Y chip information These chips, properly assembled, display characteristics similar to the TLC252 / 25_2. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . .
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 1.4 V (unless otherwise noted) PARAMETER TLC25_2C VIO Input offset voltage TLC25_2AC TLC252_C TEST CONDITIONS† 2V VO = 0 0.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC252C, TLC252AC, TLC252BC MIN TLC252C VIO Input offset voltage VO = 1.4 V,, RS = 50 Ω, VIC = 0,, RL = 10 kΩ VIC = 0,, RL = 10 kΩ Full range TLC252BC VO = 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted) PARAMETER TA† TEST CONDITIONS TLC252C, TLC252AC, TLC252BC MIN TLC252C VIO Input offset voltage VO = 1.4 V,, RS = 50 Ω, VIC = 0,, RL = 10 kΩ Full range TLC252BC VO = 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC252C, TLC252AC, TLC252BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 kΩ,, See Figure 1 CL = 20 pF,, VI(PP) ( ) = 2.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TA† TEST CONDITIONS TLC25L2C TLC25L2AC TLC25L2BC MIN VIO Input offset voltage VO = 1.4 V,, RS = 50 Ω, VIC = 0,, RL = 1 MΩ Full range TLC252AC VO = 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC25L2C TLC25L2AC TLC25L2BC MIN VIO Input offset voltage VO = 1.4 V,, RS = 50 Ω, VIC = 0,, RL = 1 MΩ Full range TLC252AC VO = 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC25L2C TLC25L2AC TLC25L2BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 MΩ,, See Figure 1 CL = 20 pF,, VI(PP) ( ) = 2.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLC25M2C TLC25M2AC TLC25M2BC MIN VIO Input offset voltage VO = 1.4 V,, RS = 50 Ω, VIC = 0,, RL = 100 kΩ Full range TLC252AC VO = 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 10 V (unless otherwise noted) PARAMETER TA† TEST CONDITIONS TLC25M2C TLC25M2AC TLC25M2BC MIN VIO Input offset voltage VO = 1.4 V,, RS = 50 Ω, VIC = 0,, RL = 100 kΩ Full range TLC252AC VO = 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC25M2C TLC25M2AC TLC25M2BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 kΩ,, See Figure 1 CL = 20 pF,, VI(PP) ( ) = 2.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 electrical characteristics, VDD = 5 V, TA = 25°C PARAMETER TEST CONDITIONS VO = 1.4 V, RS = 50 Ω, TLC252Y MIN VIC = 0 V, See Note 6 TLC25L2Y TYP MAX 1.1 10 MIN TLC25M2Y TYP MAX 1.1 10 MIN TYP MAX 1.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 PARAMETER MEASUREMENT INFORMATION single-supply versus split-supply test circuits Because the TLC252, TLC25L2, and TLC25M2 are optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground.
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS Table of Graphs FIGURE IDD Supply current AVD Large-signal differential voltage amplification Phase shift vs Supplyy voltage g vs Free-air temperature 4 5 Low bias vs Frequency 6 Medium bias vs Frequency 7 High bias vs Frequency 8 Low bias vs Frequency 6 Medium bias vs Frequen
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS LOW-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 1 MΩ TA = 25°C 106 105 30° AVD (left scale) 104 60° 103 90° Phase Shift (right scale) 102 ÁÁ ÁÁ ÁÁ 0° 120° 101 150° 1 180° Phase Shift AVD AVD – Low-Bias Large-Signal Differentia
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 TYPICAL CHARACTERISTICS HIGH-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY ÁÁ ÁÁ VDD = 10 V RL = 10 kΩ TA = 25°C 106 105 0° 30° 104 60° Phase Shift (right scale) 103 90° 102 120° Phase Shift AVD AVD – High-Bias Large-Signal Differential Voltage Amplification 107 AVD (lef
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y LinCMOS DUAL OPERATIONAL AMPLIFIERS SLOS002I – JUNE 1983 – REVISED MARCH 2001 APPLICATION INFORMATION latch-up avoidance Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current. To avoid such conditions, no voltage greater than 0.
PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 17-Aug-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device TLC252CDR Package Package Pins Type Drawing SOIC SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLC252CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLC252CPWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1 TLC25L2CDR SOIC D 8 2500 330.
PACKAGE MATERIALS INFORMATION www.ti.com 17-Aug-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLC252CDR SOIC D 8 2500 340.5 338.1 20.6 TLC252CDR SOIC D 8 2500 367.0 367.0 35.0 TLC252CPWR TSSOP PW 8 2000 367.0 367.0 35.0 TLC25L2CDR SOIC D 8 2500 340.5 338.1 20.6 TLC25L2CPWR TSSOP PW 8 2000 367.0 367.0 35.0 TLC25M2CDR SOIC D 8 2500 340.5 338.1 20.
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