Datasheet

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TLE2161, TLE2161A, TLE2161B

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE

µPOWER OPERATIONAL AMPLIFIERS

SLOS049D – NOVEMBER 1989 – REVISED MAY 1996

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Excellent Output Drive Capability

= ± 2.5 V Min at R

= 100 Ω,

CC±

= ± 5 V

= ± 12.5 V Min at R

= 600 Ω,

CC±

= ± 15 V

Low Supply Current...280 µA Typ

Decompensated for High Slew Rate and

Gain-Bandwidth Product

= 0.5 Min

Slew Rate = 10 V/µs Typ

Gain-Bandwidth Product = 6.5 MHz Typ

Wide Operating Supply Voltage Range

= ± 3.5 V to ± 18 V

High Open-Loop Gain...280 V/mV Typ

Low Offset Voltage . . . 500 µV Max

Low Offset Voltage Drift With Time

0.04 µV/Month Typ

Low Input Bias Current...5 pA Typ

description

The TLE2161, TLE2161A, and TLE2161B are

JFET-input, low-power, precision operational

amplifiers manufactured using the Texas

Instruments Excalibur process. Decompensated

for stability with a minimum closed-loop gain of 5,

these devices combine outstanding output drive

capability with low power consumption, excellent

dc precision, and high gain-bandwidth product.

In addition to maintaining the traditional JFET

advantages of fast slew rates and low input bias

and offset currents, the Excalibur process offers

outstanding parametric stability over time and

temperature. This results in a device that remains

precise even with changes in temperature and

over years of use.

AVAILABLE OPTIONS

PACKAGE

max

AT 25

SMALL

OUTLINE

CHIP

CARRIER

CERAMIC

DIP

PLASTIC

DIP

25 C

OUTLINE

(D)

CARRIER

(FK)

DIP

(JG)

DIP

(P)

0°C

500 µV

15mV

—

TLE2161ACD

— — TLE2161BCP

TLE2161ACP

70°C

3 mV

TLE2161ACD

TLE2161CD — —

TLE2161ACP

TLE2161CP

–40°C

500 µV

15mV

—

TLE2161AID

— — TLE2161BIP

TLE2161AIP

85°C

3 mV

TLE2161AID

TLE2161ID — —

TLE2161AIP

TLE2161IP

–55°C

500 µV

15mV

—

TLE2161AMD

—

TLE2161AMFK

TLE2161BMJG

TLE2161AMJG

TLE2161BMP

TLE2161AMP

125°C

3 mV

TLE2161AMD

TLE2161MD

TLE2161AMFK

TLE2161MFK

TLE2161AMJG

TLE2161MJG

TLE2161AMP

TLE2161MP

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

10 k1 k100

– Load Resistance – Ω

= 25

°C

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

LOAD RESISTANCE

– Maximum Peak-to-Peak Output Voltage – V

O(PP)

= ± 5 V

Summary of content (35 pages)

PAGE 1
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 D D D D Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 Ω, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 Ω, VCC± = ± 15 V Low Supply Current . . . 280 µA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/µs Typ Gain-Bandwidth Product = 6.5 MHz Typ Wide Operating Supply Voltage Range VCC ± = ± 3.
PAGE 2
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 description (continued) A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from – 40°C to 85°C.
PAGE 3
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VCC + (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 V Supply voltage, VCC – . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 4
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ± 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLE2161C, TLE2161AC TLE2161BC MIN 25°C TLE2161C VIO Input offset voltage IIB VICR RS = 50 Ω VIC = 0 0, Input offset current 0.5 Full range Input bias current 6 µV/°C 0.04 µV/mo 25°C 1 0.8 Full range – 1.
PAGE 5
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 operating characteristics at specified free-air temperature, VCC ± = ±5 V (unless otherwise noted) PARAMETER TEST CONDITIONS SR Slew rate (see Figure 1) Vn Equivalent q input noise voltage g (see Figure 2) Vn(PP) Peak-to-peak equivalent input noise voltage f = 0.
PAGE 6
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ± 15 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLE2161C, TLE2161AC TLE2161BC MIN 25°C TLE2161C VIO Input offset voltage 25°C RS = 50 Ω IIB VICR Input offset current VOM – 0.04 µV/mo 25°C 2 4 Full range – 11 to 13 25°C 13.
PAGE 7
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 operating characteristics at specified free-air temperature, VCC ± = ±15 V (unless otherwise noted) PARAMETER TEST CONDITIONS SR Slew rate (see Figure 1) AVD = 5 5, RL = 10 kΩ kΩ, Vn Equivalent input noise voltage q g (see Figure 2) RS = 20 Ω, RS = 20 Ω, f = 10 Hz Vn(PP) Peak-to-peak equivalent input noise voltage f = 0.
PAGE 8
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ± 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLE2161I, TLE2161AI TLE2161BI MIN 25°C TLE2161I VIO Input offset voltage IIB VICR VIC = 0, RS = 50 Ω Input offset current 25°C 0.04 µV/mo 25°C 1 Large signal differential voltage amplification Large-signal VO = ± 2 2.
PAGE 9
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 operating characteristics at specified free-air temperature, VCC ± = ± 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TLE2161I, TLE2161AI TLE2161BI MIN TYP 25°C 7 10 Full range 5 SR Slew rate (see Figure 1) AVD = 5 5, RL = 10 kΩ kΩ, Vn Equivalent input noise q voltage (see Figure 2) RS = 20 Ω, RS = 20 Ω, f = 10 Hz Vn(PP) Peak-to-peak equivale
PAGE 10
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ± 15 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLE2161I, TLE2161AI TLE2161BI MIN 25°C TLE2161I VIO Input offset voltage RS = 50 Ω IIB VICR Input offset current VOM – µV/mo 25°C 2 4 Full range – 11 to 13 25°C 13.
PAGE 11
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 operating characteristics at specified free-air temperature, VCC ± = ± 15 V (unless otherwise noted) PARAMETER TEST CONDITIONS TLE2161I, TLE2161AI TLE2161IB MIN TYP 25°C 7 10 Full range 5 UNIT MAX SR Slew rate (see Figure 1) AVD = 5 5, RL = 10 kΩ kΩ, Vn Equivalent input noise voltage q g (see Figure 2) RS = 20 Ω, RS = 20 Ω, f = 10 Hz Vn(PP) (PP) Pe
PAGE 12
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ± 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLE2161M TLE2161AM TLE2161BM MIN 25°C TLE2161M VIO Input offset voltage αVIO Input offset current IIB Input bias current VICR VOM + VOM – AVD Maximum negative peak g output voltage swing Large-signal g g differential volta
PAGE 13
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ± 5 V (unless otherwise noted continued) PARAMETER TLE2161M TLE2161AM TLE2161BM TA† TEST CONDITIONS MIN UNIT ri Input resistance 25°C TYP 1012 ci Input capacitance 25°C 4 pF zo Open-loop output impedance IO = 0 25°C 280 Ω CMRR Common mode rejection ratio Common-mode VIC = VICR
PAGE 14
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 electrical characteristics at specified free-air temperature, VCC ± = ±15 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA† TLE2161M TLE2161AM TLE2161BM MIN 25°C TLE2161M VIO Input offset voltage IIB VICR Temperature coefficient of input offset voltage RS = 50 Ω VIC = 0, Input offset current 1.5 0.3 µV/°C 25°C 0.
PAGE 15
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 operating characteristics at specified free-air temperature, VCC ± = ±15 V (unless otherwise noted) PARAMETER TEST CONDITIONS RL = 10 kΩ kΩ, RS = 20 Ω, f = 10 Hz RS = 20 Ω, f = 1 kHz TYP 25°C 7 10 Full range 5 MAX Slew rate (see Figure 1) Vn Equivalent q input noise voltage g (see Figure 2) VN(PP) Peak-to-peak equivalent input noise voltage f = 0.
PAGE 16
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 PARAMETER MEASUREMENT INFORMATION 8 kΩ 2 kΩ VCC + VCC + – – VO VI 2 kΩ VO + + VCC – VCC – CL (see Note A) RS RS NOTE A: CL includes fixture capacitance. Figure 2. Noise-Voltage Test Circuit Figure 1. Slew-Rate Test Circuit 10 kΩ VCC + 100 Ω VI – VO + VCC – CL (see Note A) RL NOTE A: CL includes fixture capacitance. Figure 3.
PAGE 17
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO Input offset voltage Distribution 4 IIB Input bias current vs Common-mode input voltage vs Free-air temperature 5 6 IIO VICR Input offset current vs Free-air temperature 6 Common-mode input voltage range limits vs Free-air temperature 7 VOM VOM Maximum positive peak output voltage vs Output current 8
PAGE 18
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS† TLE2161 DISTRIBUTION OF INPUT OFFSET VOLTAGE INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE 60 736 Amplifiers Tested From 3 Wafer Lots VCC ± = ± 15 V TA = 25°C P Package 50 I IB – Input Bias Current – pA Percentage of Amplifiers – % 15 10 5 VCC ± = ± 15 V VID = 0 TA = 25°C 40 30 20 10 0 –4 –3 –2 –1 0 1 2 VIO – Input Offset Vol
PAGE 19
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGE vs OUTPUT CURRENT 16 TA = 25°C 14 VCC ± = ± 15 V 12 10 8 6 4 VCC ± = ± 5 V 2 0 0 – 10 – 20 – 30 – 40 IO – Output Current – mA – 50 VOM – – Maximum Negative Peak Output Voltage – V VOM+ – Maximum Positive Peak Output Voltage – V MAXIMUM POSITIVE PEAK OUTPUT VOLTAGE vs OUTPUT CURRENT – 60 ÏÏÏÏ ÏÏÏÏ
PAGE 20
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY VOM – Maximum Peak Output Voltage – V 6 RL = 100 Ω TA = 25°C 4 VOM + 2 0 –2 –4 VOM – –6 0 2 4 6 8 |VCC ± | – Supply Voltage – V VO(PP) – Maximum Peak-to-Peak Output Voltage – V MAXIMUM PEAK OUTPUT VOLTAGE vs SUPPLY VOLTAGE 10 10 VCC ± = ± 5 V RL = 10 kΩ TA = 25°C 8 6 4 2 0 10
PAGE 21
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS† LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FRQUENCY LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION vs FREE-AIR TEMPERATURE 120 60° 400 100 80° 350 80 100° AVD 60 120° 40 140° 20 160° ÁÁ ÁÁ ÁÁ VCC ± = ± 15 V RL = 10 kΩ CL = 100 pF TA = 25°C 0 – 20 0.
PAGE 22
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS† 1000 VCC ± = ± 15 V TA = 25°C 100 z o – Output Impedance – Ω COMMON-MODE REJECTION RATIO vs FREQUENCY CMRR – Common-Mode Rejection Ratio – dB OUTPUT IMPEDANCE vs FREQUENCY AVD =100 10 AVD = 10 1 0.1 AVD = 1 0.01 0.
PAGE 23
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS SMALL-SIGNAL PULSE RESPONSE SMALL-SIGNAL PULSE RESPONSE 100 VO – Output Voltage – mV VO – Output Voltage – mV 100 50 0 VCC± = ± 5 V AVD = 5 RL = 10 kΩ CL = 100 pF TA = 25°C See Figure 1 – 50 0.5 1 0 VCC ± = ± 15 V AVD = 5 RL = 10 kΩ CL = 100 pF TA = 25°C See Figure 1 – 50 – 100 0 50 1.5 2 2.5 3 – 100 0 0.
PAGE 24
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS NOISE VOLTAGE (REFERRED TO INPUT) OVER A 10-SECOND INTERVAL EQUIVALENT INPUT NOISE VOLTAGE vs FREQUENCY Vn – Equivalent Input Noise Voltage – nV/ Hz 1 Vn – Noise Voltage – uV µ VCC ± = ± 15 V f = 0.1 to 10 Hz TA = 25°C 0.5 0 – 0.
PAGE 25
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 TYPICAL CHARACTERISTICS GAIN-BANDWIDTH PRODUCT vs SUPPLY VOLTAGE GAIN-BANDWIDTH PRODUCT vs FREE-AIR TEMPERATURE 7 f = 100 kHz RL = 10 kΩ CL = 100 pF TA = 25°C See Figure 3 6.6 Gain-Bandwidth Product – MHz Gain-Bandwidth Product – MHz 7 6.2 5.8 5.4 5 0 4 8 12 6.6 VCC ± = ± 15 V 6.2 5.8 VCC ± = ± 5 V 5.
PAGE 26
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 APPLICATION INFORMATION macromodel information Macromodel information provided was derived using Microsim Parts , the model generation software used with Microsim PSpice . The Boyle macromodel (see Note 5) and subcircuit in Figure 36 and Figure 37 were generated using the TLE2161 typical electrical and operating characteristics at 25°C.
PAGE 27
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 APPLICATION INFORMATION macromodel information (continued) .subckt TLE2161 1 2 3 4 5 c1 11 12 125.4E–14 c2 6 7 5.000E–12 dc 5 53 dx de 54 5d x dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 4.085E6 –4E6 4E6 4E6 –4E6 ga 6 0 11 12 201.1E–6 gcm 0 6 10 99 3.576E–9 iss 3 10 dc 45.
PAGE 28
TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLOS049D – NOVEMBER 1989 – REVISED MAY 1996 APPLICATION INFORMATION input characteristics The TLE2161, TLE2161A and TLE2161B are specified with a minimum and a maximum input voltage that if exceeded at either input could cause the device to malfunction.
PAGE 29
PACKAGE OPTION ADDENDUM www.ti.
PAGE 30
PACKAGE OPTION ADDENDUM www.ti.
PAGE 31
PACKAGE OPTION ADDENDUM www.ti.com 25-Sep-2013 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production.
PAGE 32
PACKAGE OPTION ADDENDUM www.ti.
PAGE 33
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TLE2161AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLE2161IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLE2161IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
PAGE 34
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLE2161AIDR SOIC D 8 2500 340.5 338.1 20.6 TLE2161IDR SOIC D 8 2500 367.0 367.0 35.0 TLE2161IDR SOIC D 8 2500 340.5 338.1 20.
PAGE 35
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.