Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Op-amp Multi-purpose SOIC 8

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Wide Range of Supply Voltages Over

Specified Temperature Range:

= –40°C to 85°C...2 V to 8 V

Fully Characterized at 3 V and 5 V

Single-Supply Operation

Common-Mode Input-Voltage Range

Extends Below the Negative Rail and up to

–1 V at T

= 25°C

Output Voltage Range Includes Negative

Rail

High Input Impedance...10

Ω Typ

ESD-Protection Circuitry

Designed-In Latch-Up Immunity

description

The TLV233x operational amplifiers are in a family

of devices that has been specifically designed for

use in low-voltage single-supply applications.

Unlike the TLV2322 which is optimized for

ultra-low power, the TLV233x is designed to

provide a combination of low power and good ac

performance. Each amplifier is fully functional

down to a minimum supply voltage of 2 V, is fully

characterized, tested, and specified at both 3-V

and 5-V power supplies. The common-mode

input-voltage range includes the negative rail and

extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 µA

per amplifier over full temperature range, the

TLV233x devices offer a combination of good ac

performance and microampere supply currents.

From a 3-V power supply, the amplifier’s typical

slew rate is 0.38 V/µs and its bandwidth is

300 kHz.

AVAILABLE OPTIONS

max

PACKAGED DEVICES

CHIP FORM

max

AT 25°C

SMALL OUTLINE

†

(D)

PLASTIC DIP

(N)

PLASTIC DIP

(P)

TSSOP

‡

(PW)

CHIP

FORM

(Y)

Cto85

9 mV TLV2332ID — TLV2332IP TLV2332IPWLE TLV2332Y

–

40°C

85°C

10 mV TLV2334ID TLV2334IN — TLV2334IPWLE TLV2334Y

†

The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2332IDR).

‡

The PW package is only available left-end taped and reeled (e.g., TLV2332IPWLE).

Chip forms are tested at 25°C only.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

1OUT

1IN–

1IN+

DD–

/GND

2OUT

2IN–

2IN+

1OUT

1IN–

1IN+

DD –

/GND

DD+

2OUT

2IN–

2IN+

TLV2332

D OR P PACKAGE

(TOP VIEW)

TLV2332

PW PACKAGE

(TOP VIEW)

1OUT

1IN–

1IN+

DD+

2IN+

2N–

2OUT

4OUT

4IN–

4IN+

DD–/GND

3IN+

3IN–

3OUT

4OUT

4IN–

4IN+

DD–/GND

3IN+

3IN–

3OUT

1OUT

1IN–

1IN+

DD+

2IN+

2IN–

2OUT

TLV2334

D OR N PACKAGE

(TOP VIEW)

TLV2334

PW PACKAGE

(TOP VIEW)

Summary of content (33 pages)

PAGE 1
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 D D D D D D D D TLV2332 D OR P PACKAGE (TOP VIEW) Wide Range of Supply Voltages Over Specified Temperature Range: TA = – 40°C to 85°C . . . 2 V to 8 V Fully Characterized at 3 V and 5 V Single-Supply Operation Common-Mode Input-Voltage Range Extends Below the Negative Rail and up to VDD – 1 V at TA = 25°C Output Voltage Range Includes Negative Rail High Input Impedance . . .
PAGE 2
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 description (continued) These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications. Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology.
PAGE 3
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2334Y chip information This chip, when properly assembled, displays characteristics similar to the TLV2334. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
PAGE 4
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 equivalent schematic (each amplifier) VDD P4 P3 R6 P2 P1 IN – N5 R2 R1 IN + R5 P5 C1 N3 P6 OUT N4 N1 R3 D1 N2 N6 N7 D2 R4 R7 GND ACTUAL DEVICE COMPONENT COUNT† COMPONENT TLV2332 TLV2334 Transistors 54 108 Resistors 14 28 Diodes 4 8 Capacitors 2 4 † Includes both amplifiers and all ESD, bias, and trim circuitry.
PAGE 5
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 6
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2332I electrical characteristics at specified free-air temperature TLV2332I PARAMETER VIO Input offset voltage TEST CONDITIONS VO = 1 V, VIC = 1 V,, RS = 50 Ω, RL = 100 kΩ TA† VDD = 3 V MIN TYP MAX VDD = 5 V MIN TYP MAX 25°C 0.6 1.
PAGE 7
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2332I operating characteristics at specified free-air temperature, VDD = 3 V PARAMETER SR Slew rate at unity gain TEST CONDITIONS VIC = 1 V, RL = 100 kΩ kΩ, See Figure 34 VI(PP) = 1 V, CL = 20 pF F, TA TLV2332I MIN TYP 25°C 0.38 85°C 0.
PAGE 8
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2334I electrical characteristics at specified free-air temperature TLV2334I PARAMETER TEST CONDITIONS TA† VDD = 3 V MIN TYP MAX VDD = 5 V MIN TYP MAX 0.6 1.
PAGE 9
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2334I operating characteristics at specified free-air temperature, VDD = 3 V PARAMETER SR Slew rate at unity gain TEST CONDITIONS VIC = 1 V, RL = 100 kΩ kΩ, See Figure 34 VI(PP) = 1 V, CL = 20 pF F, TA TLV2334I MIN TYP 25°C 0.38 85°C 0.
PAGE 10
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2332Y electrical characteristics, TA = 25°C TLV2332Y PARAMETER VIO Input offset voltage IIO IIB Input offset current (see Note 4) Input bias current (see Note 4) TEST CONDITIONS VO = 1 V, RS = 50 Ω, VIC = 1 V, RL = 100 kΩ VO = 1 V, VO = 1 V, VIC = 1 V VIC = 1 V VDD = 3 V MIN TYP MAX MIN VDD = 5 V TYP MAX UNIT 0.6 1.1 mV 0.1 0.1 pA 0.6 0.6 pA – 0.3 to 2.3 – 0.
PAGE 11
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TLV2334Y electrical characteristics, TA = 25°C TLV2334Y PARAMETER VIO Input offset voltage IIO IIB Input offset current (see Note 4) Input bias current (see Note 4) TEST CONDITIONS VO = 1 V, RS = 50 Ω, VIC = 1 V RL = 100 kΩ VO = 1 V, VO = 1 V, VIC = 1 V VIC = 1 V VDD = 3 V MIN TYP MAX VDD = 5 V TYP MAX UNIT MIN 0.6 1.1 mV 0.1 0.1 pA 0.6 0.6 pA – 0.3 to 2.3 – 0.3 to 4.
PAGE 12
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO αVIO Input offset voltage Distribution 1–4 Input offset voltage temperature coefficient Distribution 5–8 IIB IIO Input bias current vs Free-air temperature Input offset current vs Free-air temperature 9 VIC Common-mode input voltage vs Supply voltage 10 VOH High-level output voltage vs High-level output current vs Supply
PAGE 13
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS DISTRIBUTION OF TLV2332 INPUT OFFSET VOLTAGE 50 DISTRIBUTION OF TLV2332 INPUT OFFSET VOLTAGE 60 VDD = 3 V TA = 25°C P Package 50 Percentage of Units – % Percentage of Units – % 40 30 20 10 VDD = 5 V TA = 25°C P Package 40 30 20 10 0 –5 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 4 0 –5 –4 –3 –2 –1 0 1 2 3 VIO – Input Offset Voltage – mV 5 5
PAGE 14
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS DISTRIBUTION OF TLV2332 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT DISTRIBUTION OF TLV2332 INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT 60 50 VDD = 3 V TA = 25°C to 85°C P Package 50 Percentage of Units – % Percentage of Units – % 40 30 20 10 40 VDD = 5 V TA = 25°C to 85°C P Package Outliers: (1) 33 mV/°C 30 20 10 0 – 10 – 8 – 6 – 4 – 2 0 2 4 6 8 αVIO
PAGE 15
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 COMMON-MODE INPUT VOLTAGE vs SUPPLY VOLTAGE INPUT BIAS CURRENT AND INPUT OFFSET CURRENT vs FREE-AIR TEMPERATURE 8 104 VDD = 3 V VIC = 1 V See Note A 103 102 VVIC IC – Common-Mode Input Voltage – V IIB I IB and IIIO IO – Input Bias and Input Offset Currents – pA TYPICAL CHARACTERISTICS IIB 101 IIO 1 0.
PAGE 16
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS HIGH-LEVEL OUTPUT VOLTAGE vs FREE-AIR TEMPERATURE 2.4 700 VDD = 3 V VIC = 1 V VID = 100 mV 1.8 1.2 0.
PAGE 17
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS LOW-LEVEL OUTPUT VOLTAGE vs DIFFERENTIAL INPUT VOLTAGE 1 VDD = 5 V VIC = |VID / 2| IOL = 5 mA TA = 25°C 700 600 VOL VOL – Low-Level Output Voltage – V VOL VOL – Low-Level Output Voltage – mV 800 LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT 500 400 300 200 100 VIC = 1 V VID = – 100 mV TA = 25°C 0.9 0.8 VDD = 5 V 0.7 0.6 0.5 VDD = 3 V 0.4 0.3 0.2 0.
PAGE 18
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS 107 – 60° VDD = 3 V RL = 100 kΩ CL = 20 pF TA = 25°C 106 105 – 30° 0° 104 30° Phase Shift A VD – Large-Signal Differential Voltage Amplification LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY AVD 103 60° 102 90° Phase Shift 101 120° 1 150° 0.
PAGE 19
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS SUPPLY CURRENT vs FREE-AIR TEMPERATURE SUPPLY CURRENT vs SUPPLY VOLTAGE 400 450 VIC = 1 V VO = 1 V No Load 350 TA = – 40°C 350 uA IIDD A DD – Supply Current – µ uA IIDD A DD – Supply Current – µ 400 300 TA = 25°C 250 200 TA = 85°C 150 100 300 250 VDD = 5 V VDD = 3 V 200 150 100 50 50 0 VIC = 1 V VO = 1 V No Load 0 2 4 6 0 – 75 8 – 50 VDD – Sup
PAGE 20
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS UNITY-GAIN BANDWIDTH vs SUPPLY VOLTAGE 1000 5 VI = 10 mV RL = 100 kΩ CL = 20 pF TA = 25°C RL = 100 kΩ 900 VDD = 5 V 4 B1 – Unity-Gain Bandwidth – kHz B1 V O(PP) – Maximum Peak-to-Peak Output Voltage – V MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE vs FREQUENCY TA = – 40°C 3 VDD = 3 V 2 TA = 85°C 1 800 700 600 500 400 300 TA = 25°C 200 0 1 10 100 f – Frequency
PAGE 21
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 TYPICAL CHARACTERISTICS PHASE MARGIN vs SUPPLY VOLTAGE PHASE MARGIN vs FREE-AIR TEMPERATURE 50° 45° VI = 10 mV RL = 100 kΩ CL = 20 pF TA = 25°C 48° 43° 44° xm φ m – Phase Margin xm φ m – Phase Margin 46° VI = 10 mV RL = 100 kΩ CL = 20 pF 42° 40° 38° 36° 34° 43° VDD = 5 V 39° VDD = 3 V 37° 32° 30° 0 1 2 3 4 5 6 7 35° – 75 – 50 – 25 0 25 50 75 100 TA – Free-Air Tempera
PAGE 22
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 PARAMETER MEASUREMENT INFORMATION single-supply versus split-supply test circuits Because the TLV233x is optimized for single-supply operation, circuit configurations used for the various tests often present some inconvenience since the input signal, in many cases, must be offset from ground.
PAGE 23
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 PARAMETER MEASUREMENT INFORMATION input bias current Because of the high input impedance of the TLV233x operational amplifier, attempts to measure the input bias current can result in erroneous readings. The bias current at normal ambient temperature is typically less than 1 pA, a value that is easily exceeded by leakages on the test socket.
PAGE 24
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 PARAMETER MEASUREMENT INFORMATION generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal input signal until the maximum frequency is found above which the output contains significant distortion.
PAGE 25
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 APPLICATION INFORMATION single-supply operation (continued) The TLE2426 supplies an accurate voltage equal to VDD/2, while consuming very little power and is suitable for supply voltages of greater than 4 V.
PAGE 26
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 APPLICATION INFORMATION input characteristics (continued) It is good practice to include guard rings around inputs (similar to those of Figure 37 in the Parameter Measurement Information section). These guards should be driven from a low-impedance source at the same voltage level as the common-mode input (see Figure 41).
PAGE 27
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 APPLICATION INFORMATION latch-up Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLV233x inputs and outputs are designed to withstand – 100-mA surge currents without sustaining latch-up; however, techniques should be used to reduce the chance of latch-up whenever possible. Internal-protection diodes should not by design be forward biased.
PAGE 28
TLV2332, TLV2332Y, TLV2334, TLV2334Y LinCMOS LOW-VOLTAGE MEDIUM-POWER OPERATIONAL AMPLIFIERS SLOS189 – FEBRUARY 1997 APPLICATION INFORMATION output characteristics (continued) (a) CL = 20 pF, RL = NO LOAD (b) CL = 170 pF, RL = NO LOAD Figure 45.
PAGE 29
PACKAGE OPTION ADDENDUM www.ti.
PAGE 30
PACKAGE OPTION ADDENDUM www.ti.com 31-Oct-2013 Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.
PAGE 31
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing TLV2332IDR SOIC D TLV2332IPWR TSSOP TLV2334IPWR TSSOP SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1 PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.
PAGE 32
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLV2332IDR SOIC D 8 2500 340.5 338.1 20.6 TLV2332IPWR TSSOP PW 8 2000 367.0 367.0 35.0 TLV2334IPWR TSSOP PW 14 2000 367.0 367.0 35.
PAGE 33
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.