Datasheet

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      

  µ   

   

SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005

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POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

D Supply Current ...23 µA/Channel

D Gain-Bandwidth Product . . . 220 kHz

D Output Drive Capability . . . ±10 mA

D Input Offset Voltage ...20 µV (typ)

D V

Range . . . 2.7 V to 6 V

D Power Supply Rejection Ratio . . . 106 dB

D Ultralow-Power Shutdown Mode

. . . 16 nA/ch

D Rail-To-Rail Input/Output (RRIO)

D Ultrasmall Packaging

− 5 or 6 Pin SOT-23 (TLV2450/1)

− 8 or 10 Pin MSOP (TLV2452/3)

description

The TLV245x is a family of rail-to-rail input/output operational amplifiers that sets a new performance point for

supply current and ac performance. These devices consume a mere 23 µA/channel while offering 220 kHz of

gain-bandwidth product, much higher than competitive devices with similar supply current levels. Along with

increased ac performance, the amplifier provides high output drive capability, solving a major shortcoming of

older micropower rail-to-rail input/output operational amplifiers. The TLV245x can swing to within 250 mV of

each supply rail while driving a 2.5-mA load. Both the inputs and outputs swing rail-to-rail for increased dynamic

range in low-voltage applications. This performance makes the TLV245x family ideal for portable medical

equipment, patient monitoring systems, and data acquisition circuits.

FAMILY PACKAGE TABLE

DEVICE

NUMBER OF

PACKAGE TYPES

SHUTDOWN

UNIVERSAL

DEVICE

NUMBER OF

CHANNELS

PDIP SOIC SOT-23 TSSOP MSOP

SHUTDOWN

UNIVERSAL

EVM BOARD

TLV2450 1 8 8 6 — — Yes

TLV2451 1 8 8 5 — — —

Refer to the EVM

TLV2452 2 8 8 — — 8 —

Refer to the EVM

Selection Guide

TLV2453 2 14 14 — — 10 Yes

Selection Guide

(Lit# SLOU060)

TLV2454 4 14 14 — 14 — —

(Lit# SLOU060)

TLV2455 4 16 16 — 16 — Yes

A SELECTION OF SINGLE-SUPPLY OPERATIONAL AMPLIFIER PRODUCTS

†

DEVICE

(V)

(MHz)

SLEW RATE

(V/µs)

(per channel)

(µA)

RAIL-TO-RAIL

TLV245X 2.7 − 6.0 0.22 0.11 23 I/O

TLV247X 2.7 − 6.0 2.8 1.5 600 I/O

TLV246X 2.7 − 6.0 6.4 1.6 550 I/O

TLV277X 2.5 − 6.0 5.1 10.5 1000 O

†

All specifications measured at 5 V.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications o

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

  !"#$%&'(!$" !) *+%%,"( ') $# -+./!*'(!$" 0'(,1

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Operational Amplifier

−

All trademarks are the property of their respective owners.

Summary of content (60 pages)

PAGE 1
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 D D D D D D D D D Supply Current . . . 23 µA/Channel Gain-Bandwidth Product . . . 220 kHz Output Drive Capability . . . ±10 mA Input Offset Voltage . . . 20 µV (typ) VDD Range . . . 2.7 V to 6 V Power Supply Rejection Ratio . . . 106 dB Ultralow-Power Shutdown Mode IDD . . .
PAGE 2
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 description (continued) Three members of the family (TLV2450/3/5) offer a shutdown terminal for conserving battery life in portable applications. During shutdown, the outputs are placed in a high-impedance state and the amplifier consumes only 16 nA/channel.
PAGE 3
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TLV245x PACKAGE PINOUTS(1) TLV2450 D OR P PACKAGE (TOP VIEW) TLV2450 DBV PACKAGE (TOP VIEW) OUT 1 6 VDD+ GND 2 5 SHDN IN+ 3 4 IN − 1OUT 1IN − 1IN+ GND NC 1SHDN NC 1 8 2 7 3 6 4 5 1 8 2 7 3 6 4 5 SHDN VDD+ OUT NC OUT 1 GND 2 IN+ 3 TLV2452 D, DGK, OR P PACKAGE (TOP VIEW) TLV2451 D OR
PAGE 4
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Differential input voltage, VID . . . . . . . . . . . . . . . . . .
PAGE 5
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted) PARAMETER TEST CONDITIONS TLV245x VIO TA† 25°C MIN Input offset voltage 25°C Full range VDD = ±1.5 V VIC = 0, VO = 0, RS = 50 Ω Input offset current IIB Input bias current 2.
PAGE 6
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 operating characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted) PARAMETER SR Slew rate at unity gain Vn Equivalent input noise voltage In Equivalent input noise current TEST CONDITIONS VO(PP) = 0.
PAGE 7
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER TEST CONDITIONS TLV245x VIO TA† 25°C MIN Input offset voltage 25°C Full range VDD = ±2.5 V VIC = 0, VO = 0, RS = 50 Ω Input offset current IIB Input bias current 4.
PAGE 8
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 operating characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted) PARAMETER SR Slew rate at unity gain Vn Equivalent input noise voltage In Equivalent input noise current TEST CONDITIONS VO(PP) = 2 V, RL = 10 kΩ Total harmonic distortion plus noise t(on) t(off) Amplifier turnon t
PAGE 9
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO Input offset voltage vs Common-mode input voltage 1, 2 IIO Input offset current vs Common-mode input voltage vs Free-air temperature 3, 4 7, 8 IIB Input bias current vs Common-mode input voltage vs Free-air temperature 5, 6 7, 8 AVD Differential voltage am
PAGE 10
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE 200 VDD = 3 V TA = 25°C 100 50 0 −50 −100 −150 −200 −0.5 VDD = 5 V TA = 25°C 80 VIO − Input Offset Voltage − µV VIO − Input Offset Voltage − µV 150 100 60 40 20 0 −20 −40 −60 −80 0 0.
PAGE 11
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE INPUT BIAS CURRENT vs COMMON-MODE INPUT VOLTAGE 3 3 2 I IB − Input Bias Current − nA IIB − Input Bias Current − nA 2 VDD = 3 V TA = 25°C 1 0 −1 −2 1 0 −1 −2 −3 −3 −4 −0.5 VDD = 5 V TA = 25°C 0 0.5 1 2 1.5 2.5 3 −4 −0.5 0 3.
PAGE 12
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS 120 VDD = ±3 V TA = 25°C 90 120 60 60 Gain 30 0 0 Phase − ° A VD − Differential Voltage Amplification − dB DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs FREQUENCY −60 Phase −120 −30 −60 100 1k 10k 100k f − Frequency − Hz −180 1M Figure 9 120 VDD = ±5 VDC TA = 25°C 90 120
PAGE 13
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS LOW-LEVEL OUTPUT VOLTAGE vs LOW-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT VOLTAGE vs HIGH-LEVEL OUTPUT CURRENT 3 3 VDD = 3 V VOH − High-Level Output Voltage − V VOL− Low-Level Output Voltage − V VDD = 3 V 2.5 2 TA = 25°C 1.5 TA = 85°C TA = 125°C 1 TA = −40°C 0.5 2.
PAGE 14
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS OUTPUT IMPEDANCE vs FREQUENCY OUTPUT IMPEDANCE vs FREQUENCY 10k 10k VDD = 5 V TA = 25°C VDD = 3 V TA = 25°C Zo − Output Impedance − Ω Zo − Output Impedance − Ω 1k 1k AV = 100 100 AV = 10 AV = 1 10 AV = 100 100 10 AV = 10 1 1 100 AV = 1 0.
PAGE 15
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS POWER SUPPLY REJECTION RATIO vs FREQUENCY SUPPLY CURRENT vs SUPPLY VOLTAGE 40 90 VDD = 3 V or 5 V TA = 25°C 80 35 70 PSRR + 60 50 40 PSRR − 30 20 10 0 AV = 1 SHDN = VDD Per Channel 30 TA = 25°C 25 TA = −40°C 20 15 10 5 10 100 1k 10k 100k 0 2.5 1M 3 f − Frequency − Hz 3.
PAGE 16
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 100% VDD = 3 V VO(PP) = 1.5 V RL = 10 kΩ TA = 25°C 10% THD+N − Total harmonic Distortion + Noise THD+N − Total harmonic Distortion + Noise 100% AV = 10 AV = 100 1% 0.1% AV = 1 0.01% 0.
PAGE 17
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS SLEW RATE vs SUPPLY VOLTAGE SLEW RATE vs FREE-AIR TEMPERATURE 0.16 SR − Slew Rate − V/ µ s f = 10 kHz TA = 25°C RL = 10 kΩ CL = 160 pF AV = 1 0.11 0.1 0.14 f = 10 kHz RL = 10 kΩ CL = 160 pF AV = 1 0.12 VDD = 5 V VDD = 3 V 0.1 0.08 0.09 2.5 3 3.5 4.5 4 0.
PAGE 18
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS CROSSTALK vs FREQUENCY CROSSTALK vs FREQUENCY −20 −20 VDD = 3 V AV = 1 RL = 10 kΩ All Channels −30 −40 −50 Crosstalk − dB Crosstalk − dB −40 VDD = 5 V AV = 1 RL = 10 kΩ All Channels −30 −60 −70 −50 −60 −70 −80 −80 −90 −90 −100 −100 −110 −110 10 100 10k 1k 100k 10 100
PAGE 19
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS LARGE-SIGNAL FOLLOWER PULSE RESPONSE vs TIME 5 2 VO − Output Voltage − V 3 2 VI 1 0 −1 1 −2 0 −3 VI − Input Voltage − V VDD = 3 V AV = 1 RL = 10 kΩ CL = 160 pF f = 10 kHz TA = 25°C 4 VO −4 −1 −2 −20 0 20 40 60 80 −5 100 t − Time − µs Figure 32 240 80 200 40 160 0 12
PAGE 20
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS LARGE-SIGNAL FOLLOWER PULSE RESPONSE vs TIME 8 VO − Output Voltage − V 2 VDD = 5 V RL = 10 kΩ CL = 160 pF AV = 1 TA = 25°C f = 10 kHz VI 6 1 0 −1 −2 −3 4 −4 VO 2 −5 −6 0 VI − Input Voltage − V 10 −7 −8 −2 −9 −4 −10 0 10 20 30 40 50 60 t − Time − µs 70 80 −10 90 100 Figure
PAGE 21
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS SHUTDOWN OFF SUPPLY CURRENT vs TIME 10 50 5 30 0 20 −5 Supply Current − IDD 10 −10 0 −15 −10 −20 −10 0 10 20 30 40 t − Time − µS 50 60 70 Shutdown Pulse − V I DD − Supply Current − µ A Shutdown Control Signal 40 −20 80 Figure 36 SHUTDOWN SUPPLY CURRENT vs FREE-AIR TEMPERAT
PAGE 22
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS SHUTDOWN SUPPLY CURRENT AND SHUTDOWN PULSE vs TIME 5 VDD = 3 V AV = 1 VI = 1.
PAGE 23
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS SHUTDOWN SUPPLY CURRENT AND SHUTDOWN PULSE vs TIME VDD = 5 V AV = 1 VI = 2.
PAGE 24
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS SHUTDOWN OFF PULSE RESPONSE vs TIME SHUTDOWN OFF PULSE RESPONSE vs TIME 4 6 SD Pulse SD Pulse 5 VDD = 3 V AV = 1 VI = 2.
PAGE 25
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 TYPICAL CHARACTERISTICS SHUTDOWN REVERSE ISOLATION vs FREQUENCY SHUTDOWN FORWARD ISOLATION vs FREQUENCY 140 VDD = 3 V and 5 V VI(PP) = 0.1, 1.5, 2.5 V RL = 10 kΩ CL = 28 pF TA = 25°C 120 100 Shutdown Forward Isolation − dB Shutdown Reverse Isolation − dB 140 80 60 40 20 VDD = 3 V and 5 V VI(PP) = 0.1, 1.
PAGE 26
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 APPLICATION INFORMATION shutdown function Three members of the TLV245x family (TLV2450/3/5) have a shutdown terminal for conserving battery life in portable applications.
PAGE 27
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 APPLICATION INFORMATION offset voltage The output offset voltage, (VOO) is the sum of the input offset voltage (VIO) and both input bias currents (IIB) times the corresponding gains.
PAGE 28
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 APPLICATION INFORMATION general power dissipation considerations For a given θJA, the maximum power dissipation is shown in Figure 53 and is calculated by the following formula: P D + Where: ǒ T Ǔ –T MAX A q JA PD = Maximum power dissipation of TLV245x IC (watts) TMAX = Absolute maximum junction temperature (1
PAGE 29
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 APPLICATION INFORMATION macromodel information Macromodel information provided was derived using Microsim Parts, the model generation software used with Microsim PSpice.
PAGE 30
µ SLOS218F − DECEMBER 1998 − REVISED JANUARY 2005 APPLICATION INFORMATION 3 VDD+ 99 + rp rc1 ree rc2 egnd cee c1 IN+ 11 1 12 + c2 r2 9 7 + vlim − 8 6 vc 2 q1 IN− dp q2 − 13 14 re1 re2 53 4 dc − vb − ve + 54 ga gcm dlp 91 iee GND + ro1 ioff OUT 10 90 dln + hlim − + vlp − 5 92 − vln + de * AMP_TLV2450−X operational ampli
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 31-Oct-2013 (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line.
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PACKAGE MATERIALS INFORMATION www.ti.com 19-Nov-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TLV2450AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLV2450CDBVR SOT-23 DBV 6 3000 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3 TLV2450CDBVT SOT-23 DBV 6 250 180.0 9.0 3.15 3.2 1.4 4.0 8.
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PACKAGE MATERIALS INFORMATION www.ti.com 19-Nov-2012 Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TLV2452CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLV2452IDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 TLV2452IDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 TLV2452IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
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PACKAGE MATERIALS INFORMATION www.ti.com 19-Nov-2012 Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLV2450CDBVR SOT-23 DBV 6 3000 182.0 182.0 20.0 TLV2450CDBVT SOT-23 DBV 6 250 182.0 182.0 20.0 TLV2450IDBVR SOT-23 DBV 6 3000 182.0 182.0 20.0 TLV2450IDBVT SOT-23 DBV 6 250 182.0 182.0 20.0 TLV2451AIDR SOIC D 8 2500 340.5 338.1 20.6 TLV2451CDBVR SOT-23 DBV 5 3000 182.0 182.0 20.0 TLV2451CDBVT SOT-23 DBV 5 250 182.
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