Datasheet

TLV2711, TLV2711Y
Advanced LinCMOS RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS196A – AUGUST 1997 – REVISED MARCH 2001
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Output Swing Includes Both Supply Rails
Low Noise . . . 21 nV/Hz Typ at f = 1 kHz
Low Input Bias Current ...1 pA Typ
Very Low Power ...11 µA Per Channel Typ
Common-Mode Input Voltage Range
Includes Negative Rail
Wide Supply Voltage Range
2.7 V to 10 V
Available in the SOT-23 Package
Macromodel Included
description
The TLV2711 is a single low-voltage operational
amplifier available in the SOT-23 package. It
consumes only 11 µA (typ) of supply current and
is ideal for battery-power applications. Looking at
Figure 1, the TLV2711 has a 3-V noise level of
21 nV/Hz
at 1 kHz; five times lower than
competitive SOT-23 micropower solutions. The
device exhibits rail-to-rail output performance for
increased dynamic range in single- or split-supply
applications. The TLV2711 is fully characterized
at 3 V and 5 V and is optimized for low-voltage
applications.
The TLV2711, exhibiting high input impedance
and low noise, is excellent for small-signal
conditioning for high-impedance sources, such as
piezoelectric transducers. Because of the micro-
power dissipation levels combined with 3-V
operation, these devices work well in hand-held
monitoring and remote-sensing applications. In
addition, the rail-to-rail output feature with single
or split supplies makes this family a great choice
when interfacing with analog-to-digital converters
(ADCs).
With a total area of 5.6mm
2
, the SOT-23 package only requires one-third the board space of the standard 8-pin
SOIC package. This ultra-small package allows designers to place single amplifiers very close to the signal
source, minimizing noise pick-up from long PCB traces.
AVAILABLE OPTIONS
T
A
V
IO
max AT 25°C
PACKAGED DEVICES
SYMBOL
CHIP FORM
T
A
V
IO
max AT 25°C
SOT-23 (DBV)
SYMBOL
CHIP FORM
(Y)
0°C to 70°C 3 mV TLV2711CDBV VAJC
TLV2711Y
–40°C to 85°C 3 mV TLV2711IDBV VAJI
TLV2711Y
The DBV package available in tape and reel only.
Chip forms are tested at T
A
= 25°C only.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications o
f
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
DBV PACKAGE
(TOP VIEW)
5
43
1
2
IN+
V
DD+
OUT V
DD–
/GND
IN–
– Equivalent Input Noise Voltage –
f – Frequency – Hz
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
V
n
nV/ Hz
40
30
20
0
60
50
10
V
DD
= 3 V
R
S
= 20
T
A
= 25°C
70
80
10
1
10
2
10
3
10
4
Figure 1. Equivalent Input Noise Voltage
Versus Frequency
For all curves where V
DD
= 5 V, all loads are referenced to 2.5 V
.
For all curves where V
DD
= 3 V, all loads are referenced to 1.5 V
.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 2001, Texas Instruments Incorporated
Advanced LinCMOS is a trademark of Texas Instruments.

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