Datasheet

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FEATURES APPLICATIONS

DESCRIPTION

V+

REF

IN-

OUT

IN+

DBVPACKAGE

(TOPVIEW)

TLV3011-EP , TLV3012-EP

SGLS349 – OCTOBER 2006

NANOPOWER 1.8-V SOT23 COMPARATORS WITH VOLTAGE REFERENCE

• Battery-Powered Level Detection

• Controlled Baseline

• Data Acquisition

– One Assembly/Test Site

• System Monitoring

– One Fabrication Site

• Oscillators

• Extended Temperature Performance of

• Sensor Systems

–55 ° C to 125 ° C

– Smoke Detectors

• Enhanced Diminishing Manufacturing

– Light Sensors

Sources (DMS) Support

– Alarms

• Enhanced Product-Change Notification

• Qualification Pedigree

(1)

• Low Quiescent Current = 5 µ A (Max)

The TLV3011 and TLV3012 are low-power,

• Integrated Voltage Reference = 1.242 V

open-drain output comparators. The devices feature

• Input Common-Mode Range = 200 mV

an uncommitted on-chip voltage reference, have

Beyond Rails

5- µ A (max) quiescent current, input common-mode

range 200 mV beyond the supply rails, and

• Voltage Reference Initial Accuracy = 1%

single-supply operation from 1.8 V to 5.5 V. The

• Open-Drain Logic Compatible Output

integrated 1.242-V series voltage reference offers

(TLV3011)

low 100-ppm/ ° C (max) drift, is stable with up to

• Push-Pull Output (TLV3012)

10-nF capacitive load, and can provide up to

0.5 mA (typ) of output current.

• Low Supply Voltage = 1.8 V to 5.5 V

• Fast Response Time = 6- µ s Propagation

The TLV3011 and TLV3012 are available in the tiny

SOT23-6 package for space-conservative designs.

Delay With 100-mV Overdrive

The devices are specified for the temperature range

(TLV3011: R

PULLUP

= 10 k Ω )

of –55 ° C to 125 ° C.

• Microsize Package: SOT23-6

(1)

Component qualification in accordance with JEDEC and

industry standards to ensure reliable operation over an

extended temperature range. This includes, but is not limited

to, Highly Accelerated Stress Test (HAST) or biased 85/85,

temperature cycle, autoclave or unbiased HAST,

electromigration, bond intermetallic life, and mold compound

life. Such qualification testing should not be viewed as

justifying use of this component beyond specified

performance and environmental limits.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (18 pages)

PAGE 1
TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 NANOPOWER 1.8-V SOT23 COMPARATORS WITH VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • (1) Controlled Baseline – One Assembly/Test Site – One Fabrication Site Extended Temperature Performance of –55°C to 125°C Enhanced Diminishing Manufacturing Sources (DMS) Support Enhanced Product-Change Notification Qualification Pedigree(1) Low Quiescent Current = 5 µA (Max) Integrated Voltage Reference = 1.
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TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 0.5 15 UNIT Offset Voltage VOS Input offset voltage VCM = 0 V, IO = 0 V dVOS/dT Input offset voltage vs temperature TA = –55°C to 125°C ±12 PSRR Power supply rejection ratio VS = 1.8 V to 5.
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TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 ELECTRICAL CHARACTERISTICS (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Temperature Operating range –55 125 °C Storage range –65 150 °C Thermal resistance SOT23-6 °C/W 200 TYPICAL CHARACTERISTICS QUIESCENT CURRENT vs OUTPUT SWITCHING FREQUENCY 3.8 8 3.6 7 Quiescent Current – µA Quiescent Current – µA QUIESCENT CURRENT vs TEMPERATURE 3.4 3.2 3 2.8 2.
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TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 TYPICAL CHARACTERISTICS (continued) OUTPUT LOW vs OUTPUT CURRENT OUTPUT HIGH vs OUTPUT CURRENT 0.25 0.25 VS = 1.8 V VS = 3 V 0.15 VS = 5 V 0.10 VDD = 1.8 V 0.15 0.10 VDD = 5 V 0.05 0.05 0 0 0 2 4 6 8 Output Current – mA 10 0 12 4 6 8 Output Current – mA 10 Figure 6.
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TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 TYPICAL CHARACTERISTICS (continued) PROPAGATION DELAY (tPLH) vs TEMPERATURE PROPAGATION DELAY (tPHL) vs TEMPERATURE 8 tPHL – Propagation Delay – µs 7 6.5 VS = 1.8 V VS = 3 V 6 5.5 5 VS = 5 V 4.5 4 -50 -25 0 25 50 75 Temperature – °C 100 VS = 3 V 6.5 6 5.5 VS = 5 V 5 4.5 4 -50 125 -25 VIN– VIN+ 2 V/div TLV3011 VOUT VS = 2.5 V VIN+ VIN– VOUT 2 µs/div Figure 13. Figure 14.
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TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 TYPICAL CHARACTERISTICS (continued) REFERENCE VOLTAGE vs OUTPUT LOAD CURRENT (SINKING) 1.24205 1.250 1.24200 1.249 Reference Voltage – V Reference Voltage – V REFERENCE VOLTAGE vs OUTPUT LOAD CURRENT (SOURCING) 1.24195 1.24190 1.24185 1.24180 1.24175 1.24170 1.24165 1.248 1.247 1.246 1.245 1.244 1.243 1.242 1.24160 1.241 0 0.2 0.4 0.6 0.8 1 Output Load Current, Sourcing – mA 0 1.2 0.2 0.4 0.6 0.
PAGE 8
TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 APPLICATION INFORMATION The TLV3011 is a low-power, open-drain comparator with on-chip 1.242-V series reference. The open-drain output allows multiple devices to be driven by a single pullup resistor to accomplish an OR function, making the TLV3011 useful for logic applications. The TLV3012 comparator with on-chip 1.242-V series reference has a push-pull output stage optimal for reduced power budget applications and features no shoot-through current.
PAGE 9
TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 APPLICATION INFORMATION (continued) V+ 5V (1) RPULLUP – VIN VOUT TLV301x + REF R1 39 kΩ R2 560 kΩ VHYST = 0.38 V VREF (1) Use RPULLUP with the TLV3011 only. Figure 23. Adding Hysteresis VHYST sets the value of the transition voltage required to switch the comparator output by increasing the threshold region, thereby reducing sensitivity to noise. Applications Battery-Level Detect The low power consumption and 1.
PAGE 10
TLV3011-EP, TLV3012-EP www.ti.com SGLS349 – OCTOBER 2006 APPLICATION INFORMATION (continued) Power-On Reset The reset circuit shown in Figure 25 provides a time-delayed release of reset to the MSP430 microcontroller. Operation of the circuit is based on a stabilization time constant of the supply voltage, rather than on a predetermined voltage value. The negative input is a reference voltage created by the internal voltage reference. The positive input is an RC circuit that provides a power-up delay.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
PAGE 13
PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device TLV3011AMDBVREP Package Package Pins Type Drawing SPQ SOT-23 3000 DBV 6 Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 179.0 8.4 Pack Materials-Page 1 3.2 B0 (mm) K0 (mm) P1 (mm) 3.2 1.4 4.0 W Pin1 (mm) Quadrant 8.
PAGE 14
PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLV3011AMDBVREP SOT-23 DBV 6 3000 203.0 203.0 35.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.