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   

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  

SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D High Output Drive . . . >300 mA

D Rail-To-Rail Output

D Unity-Gain Bandwidth . . . 2.7 MHz

D Slew Rate . . . 1.5 V/µs

D Supply Current . . . 700 µA/Per Channel

D Supply Voltage Range . . . 2.5 V to 6 V

D Specified Temperature Range:

− T

= 0°C to 70°C . . . Commercial Grade

− T

= −40°C to 125°C . . . Industrial Grade

D Universal OpAmp EVM

description

The TLV411x single supply operational amplifiers provide output currents in excess of 300 mA at 5 V. This

enables standard pin-out amplifiers to be used as high current buffers or in coil driver applications. The TLV4110

and TLV4113 come with a shutdown feature.

The TLV411x is available in the ultra small MSOP PowerPAD package, which offers the exceptional thermal

impedance required for amplifiers delivering high current levels.

All TLV411x devices are offered in PDIP, SOIC (single and dual) and MSOP PowerPAD (dual).

FAMILY PACKAGE TABLE

DEVICE

NUMBER OF

PACKAGE TYPES

SHUTDOWN

UNIVERSAL

DEVICE

NUMBER OF

CHANNELS

MSOP PDIP SOIC

SHUTDOWN

UNIVERSAL

EVM BOARD

TLV4110 1 8 8 8 Yes

Refer to the EVM

TLV4111 1 8 8 8 —

Refer to the EVM

Selection Guide

TLV4112 2 8 8 8 —

Selection Guide

(Lit# SLOU060)

TLV4113 2 10 14 14 Yes

(Lit# SLOU060)

HIGH-LEVEL OUTPUT VOLTAGE

HIGH-LEVEL OUTPUT CURRENT

= 3 V

− High-Level Output Current − mA

− High-Level Output Voltage − V

= 70°C

= 25°C

= 0°C

= −40°C

3.0

2.9

2.8

2.7

2.6

2.5

2.4

2.3

2.0

0 50 200100 150 250 300

2.2

2.1

= 125°C

= −40°C

LOW-LEVEL OUTPUT VOLTAGE

LOW-LEVEL OUTPUT CURRENT

= 3 V

− Low-Level Output Current − mA

= 70°C

= 25°C

= 0°C

V − Low-Level Output Voltage − V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.0

0 50 200100 150 250 300

0.2

0.1

= 125°C

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

1OUT

1IN−

1IN+

GND

2OUT

2IN−

2IN+

TLV4112

D, DGN, OR P PACKAGE

(TOP VIEW)

Operational Amplifier

−

PowerPAD is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.

Summary of content (35 pages)

PAGE 1
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 D D D D D D D D Operational Amplifier High Output Drive . . . >300 mA Rail-To-Rail Output Unity-Gain Bandwidth . . . 2.7 MHz Slew Rate . . . 1.5 V/µs Supply Current . . . 700 µA/Per Channel Supply Voltage Range . . . 2.5 V to 6 V Specified Temperature Range: − TA = 0°C to 70°C . . . Commercial Grade − TA = −40°C to 125°C . . .
PAGE 2
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 TLV4110 AND TLV4111 AVAILABLE OPTIONS PACKAGED DEVICES MSOP TA SMALL OUTLINE (D)†‡ 0°C to 70°C −40°C to 125°C SMALL OUTLINE (DGN)† SYMBOL PLASTIC DIP (P) TLV4110CD TLV4110CDGN xxTIAHL TLV4110CP TLV4111CD TLV4111CDGN xxTIAHN TLV4111CP TLV4110ID TLV4110IDGN xxTIAHM TLV4110IP TLV4111ID TLV4111IDGN xxTIAHO TLV4111IP † This package is available taped
PAGE 3
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 electrical characteristics at recommend operating conditions, VDD = 3 V and 5 V (unless otherwise noted) dc performance PARAMETER VIO Input offset voltage αVIO Offset voltage draft CMRR Common-mode rejection ratio TEST CONDITIONS MIN TYP MAX 175 3500 VIC = VDD/2, RL = 100 Ω, VO = VDD/2 , RS = 50 Ω 25°C 3 VDD = 3 V, RS = 50 Ω VIC = 0 to 2 V, 25°C 63
PAGE 5
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 electrical characteristics at specified free-air temperature, VDD = 3 V and 5 V (unless otherwise noted) (continued) output characteristics PARAMETER TEST CONDITIONS IOH = −10 mA VDD = 3 V, VIC = VDD/2 IOH =−100 mA VOH IOH = −10 mA High-level output voltage VDD = 5 V, VIC = VDD/2 IOH = −100 mA IOH = −200 mA TA† 25°C MIN TYP 2.7 2.97 Full range 2.
PAGE 6
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 electrical characteristics at specified free-air temperature, VDD = 3 V and 5 V (unless otherwise noted) (continued) dynamic performance PARAMETER GBWP SR φM Gain bandwidth product Slew rate at unity gain Phase margin TEST CONDITIONS RL=100 Ω CL=10 pF Vo(pp) = 2 V, RL = 100 Ω, CL = 10 pF MIN TYP 25°C 0.8 1.57 Full range 0.
PAGE 7
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 TYPICAL CHARACTERISTICS Table of Graphs FIGURE VIO CMRR Input offset voltage vs Common-mode input voltage Common-mode rejection ratio vs Frequency VOH VOL High-level output voltage vs High-level output current 4, 6 Low-level output voltage vs Low-level output current 5, 7 Zo IDD Output impedance vs Frequency Supply current vs Supply voltage 9 kSVR Po
PAGE 8
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 TYPICAL CHARACTERISTICS INPUT OFFSET VOLTAGE vs COMMON-MODE INPUT VOLTAGE 6000 VDD = 3 V TA = 25°C 4000 V IO − Input Offset Voltage − µ V 2000 0 −2000 −4000 VDD = 5 V TA = 25°C 4000 2000 0 −2000 −4000 −6000 −0.2 0 −6000 −0.2 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 VICR − Common-Mode Input Voltage − V 0.4 1.0 1.6 2.2 2.8 3.4 4.0 4.6 5.
PAGE 9
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 TYPICAL CHARACTERISTICS DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs FREQUENCY PSRR − Power Supply Rejection Ratio − V 100 VDD = 3 & 5 V RF = 1 kΩ RI = 100 Ω VIN = 0 V TA = 25°C 90 80 70 60 50 40 30 20 10 0 100 1k 10 k 100 k 1M 10 M 120 135 100 PHASE 80 90 60 40 0 −20 VDD = 3 & 5 V RL = 100 kΩ CL = 10 pF TA = 25°C −40 100 1k 10 k f − Frequency − H
PAGE 10
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 TYPICAL CHARACTERISTICS 4 VIN 2 1 VO 0 4 VDD = 5 V AV = 1 RL = 100 Ω CL = 10 pF TA = 25°C 3 2 1 0 −2 0 2 4 6 8 10 12 14 2.6 VIN 2.55 VDD = 5 V AV = 1 RL = 100 Ω CL = 10 pF TA = 25°C VIN = 100 mV 2.5 2.45 2.55 VO 2.5 2.45 2.4 −0.2 0.0 0.2 t − TIME − µs VDD = 5 V AV = −1 RL = 100 Ω CL = 50 pF TA = 25°C VIN = 2.
PAGE 11
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 TYPICAL CHARACTERISTICS SHDN − Shutdown Pulse − V SHUTDOWN SUPPLY CURRENT / OUTPUT VOLTAGE 4 3 2 1 SD 0 I DD(SD) − Shutdown Supply Current −µ A V O − Output Voltage − V 2 VDD = 3 V AV = 1 RL = 100 Ω CL = 10 pF VIN = VDD/2 TA = 25° C 1.5 1 0.
PAGE 12
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 APPLICATION INFORMATION shutdown function Two members of the TLV411x family (TLV4110/3) have a shutdown terminal for conserving battery life in portable applications. When the shutdown terminal is tied low, the supply current is reduced to just nano amps per channel, the amplifier is disabled, and the outputs are placed in a high impedance mode.
PAGE 13
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 APPLICATION INFORMATION Rnull _ + RL CL Figure 29 general power design considerations When driving heavy loads at high junction temperatures there is an increased probability of electromigration affecting the long term reliability of ICs. Therefore for this not to be an issue either: D The output current must be limited (at these high junction temperatures).
PAGE 14
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 APPLICATION INFORMATION general PowerPAD design considerations The TLV411x is available in a thermally-enhanced PowerPAD family of packages. These packages are constructed using a downset leadframe upon which the die is mounted [see Figure 30(a) and Figure 30(b)].
PAGE 15
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 APPLICATION INFORMATION Although there are many ways to properly heatsink the PowerPAD package, the following steps illustrate the recommended approach. general PowerPAD design considerations (continued) 1. The thermal pad must be connected to the most negative supply voltage on the device, GND. 2.
PAGE 16
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 APPLICATION INFORMATION general PowerPAD design considerations (continued) MAXIMUM POWER DISSIPATION vs FREE-AIR TEMPERATURE 4 TJ = 150°C Maximum Power Dissipation − W 3.5 3 DGN Package Low-K Test PCB θJA = 52.7°C/W 2.5 PDIP Package Low-K Test PCB θJA = 104°C/W 2 SOIC Package Low-K Test PCB θJA = 176°C/W 1.0 1 0.
PAGE 17
SLOS289E − DECEMBER 1999 − REVISED SEPTEMBER 2006 APPLICATION INFORMATION macromodel information Macromodel information provided was derived using Microsim Parts, the model generation software used with Microsim PSpice. The Boyle macromodel (see Note 3) and subcircuit in Figure 33 are generated using the TLV411x typical electrical and operating characteristics at TA = 25°C.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 31-Oct-2013 Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
PAGE 22
PACKAGE MATERIALS INFORMATION www.ti.com 12-Dec-2011 TAPE AND REEL INFORMATION *All dimensions are nominal Device TLV4110IDGNR Package Package Pins Type Drawing MSOPPower PAD SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 TLV4110IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLV4111IDGNR MSOPPower PAD DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.
PAGE 23
PACKAGE MATERIALS INFORMATION www.ti.com 12-Dec-2011 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLV4110IDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0 TLV4110IDR SOIC D 8 2500 340.5 338.1 20.6 TLV4111IDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0 TLV4111IDR SOIC D 8 2500 340.5 338.1 20.6 TLV4112IDGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0 TLV4112IDGNR MSOP-PowerPAD DGN 8 2500 364.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.