Datasheet

(b) Diode-Connected Transistor
(a) GND Collector-Connected Transistor
DXP
DXN
R
S1
(1)
R
S2
(1)
DXP
DXN
R
S1
(1)
R
S2
(1)
(b) Diode-ConnectedTransistor
(a) GNDCollector-ConnectedTransistor
DXP
DXN
C
DIFF
(1)
DXP
DXN
C
DIFF
(1)
TMP512
TMP513
SBOS491A –JUNE 2010– REVISED MAY 2011 www.ti.com
PARAMETRIC MEASUREMENT INFORMATION
TYPICAL CONNECTIONS
Figure 18. SERIES RESISTANCE CONFIGURATION
(1) R
S1
+ R
S2
should be less than 1kΩ; see Filtering section.
Figure 19.
Figure 20. DIFFERENTIAL CAPACITANCE CONFIGURATION
(1) C
DIFF
should be less than 2200pF; see Filtering section.
Figure 21.
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