Datasheet

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FEATURES APPLICATIONS

DESCRIPTION

IN–

IN+

AGND

PGND

VOUT+

VOUT–

V OUT

V IN

10 Fm

22 Fm

1 Fm

ToBattery

Differential

Input

V FB

SDb

SDd

ShutDownBoost

ShutDownClassD

GAIN

Gain(V /Float/GND)

2.2to6.2 Hm

GPIO

1 Fm

50kΩ

500kΩ

TPA2013D1

SLOS520 – AUGUST 2007

www.ti.com

2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED

BOOST CONVERTER

• Cell Phones

• High Efficiency Integrated Boost Converter

(Over 90% Efficiency)

• PDA

• GPS

• 2.2-W into an 8- Ω Load from a 3.6-V Supply

• Portable Electronics

• 2.7-W into an 4- Ω Load from a 3.6-V Supply

• Operates from 1.8 V to 5.5 V

• Efficient Class-D Prolongs Battery Life

The TPA2013D1 is a high efficiency Class-D audio

• Independent Shutdown for Boost Converter

power amplifier with an integrated boost converter. It

and Class-D Amplifier

drives up to 2.7 W (10% THD+N) into a 4 Ω speaker.

• Differential Inputs Reduce RF Common Noise

With 85% typical efficiency, the TPA2013D1 helps

extend battery life when playing audio.

• Built-in INPUT Low Pass Filter Decreases RF

and Out of Band Noise Sensitivity

The built-in boost converter generates the voltage rail

• Synchronized Boost and Class-D Eliminates

for the Class-D amplifier. This provides a louder

Beat Frequencies audio output than a stand-alone amplifier connected

directly to the battery. It also maintains a consistent

• Thermal and Short-Circuit Protection

loudness, regardless of battery voltage. Additionally,

• Available in 2.275 mm x 2.275 mm 16-ball

the boost converter can be used to supply external

WCSP and 4 mm x 4 mm 20-Lead QFN

devices.

Packages

The TPA2013D1 has an integrated low pass filter to

• 3 Selectable Gain Settings of 2 V/V, 6 V/V, and

improve RF rejection and reduce out-of-band noise,

10 V/V

increasing the signal to noise ratio (SNR). A built-in

PLL synchronizes the boost converter and Class-D

switching frequencies, thus eliminating beat

frequencies and improving audio quality. All outputs

are fully protected against shorts to ground, power

supply, and output-to-output shorts.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (30 pages)

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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 2.7-W CONSTANT OUTPUT POWER CLASS-D AUDIO AMPLIFIER WITH INTEGRATED BOOST CONVERTER FEATURES APPLICATIONS • • • • • 1 • • • • • • • • • • • High Efficiency Integrated Boost Converter (Over 90% Efficiency) 2.2-W into an 8-Ω Load from a 3.6-V Supply 2.7-W into an 4-Ω Load from a 3.6-V Supply Operates from 1.8 V to 5.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 Functional Block Diagram SW BG Control VCCOUT AntiRinging VDD VCCOUT Vmax Control Gate Control PGND VCCFB Regulator SDb SDd Biases, Control, and References Vref Internal Oscillator AGND VCCIN GAIN IN– IN+ PWM and Level Shifter Res. Array VOUT+ H-Bridge VOUT– PGND AGND AGND PGND Table 1.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) VDD Supply voltage VI Input voltage, Vi: SDb, SDd, IN+, IN–, VCCFB (1) Continuous total power dissipation VALUE UNIT –0.3 to 6 V –0.3 to VDD + 0.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 DC CHARACTERISTICS TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Class-D audio power amplifier voltage supply range, VCCIN VCC ISD Shutdown quiescent current TYP 3 MAX 5.5 SDd = SDb = 0 V, VDD = 1.8 V, RL = 8 Ω 0.04 1.5 SDd = SDb = 0 V, VDD = 3.6 V, RL = 8 Ω 0.04 1.5 SDd = SDb = 0 V, VDD = 4.5 V, RL = 8 Ω 0.02 1.5 SDd = SDb = 0.35 V, VDD = 1.8 V, RL = 8 Ω 0.03 1.5 SDd = SDb = 0.35 V, VDD = 3.6 V, RL = 8 Ω 0.03 1.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 BOOST CONVERTER DC CHARACTERISTICS TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VCC Output voltage range 3.0 VFB Feedback voltage 490 IOL Output current limit, Boost_max 1300 RON_PB PMOS switch resistance 220 mΩ RON_NB NMOS resistance 170 mΩ IL Line regulation No Load, 1.8 V < VDD < 5.2 V, VCC = 5.5 V Load regulation VDD = 3.6 V, 0 < IL < 500 mA, VCC = 5.5 V Start up current limit, Boost 5.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 CLASS D AMPLIFIER AC CHARACTERISTICS TA = 25°C, VDD = 3.6V, RL = 8 Ω, L = 4.7μH (unless otherwise noted) PARAMETER KSVR Class-D THD+N Class-D Vn Class-D PO TEST CONDITIONS Output referred power supply rejection ratio Total harmonic distortion + noise MIN TYP VDD = 3.6 V, VCC = 5.5V, 200 mVPP ripple, f = 217 Hz –95 f = 1 kHz, Po = 1.7 W, VCC = 5.5 V 1% f = 1 kHz, Po = 1.2 W, VCC = 4.5 V 1% f = 1 kHz, Po = 2.2 W, VCC = 5.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TYPICAL CHARACTERISTICS EFFICIENCY vs OUTPUT POWER 100 100 80 80 Efficiency − % Efficiency − % EFFICIENCY vs OUTPUT POWER 60 40 VDD = 3.6 V VDD = 2.5 V VDD = 4.2 V VDD = 1.8 V Gain = 2 V/V RL = 8 Ω + 33 µH VCC = 4.5 V 20 0 0.0 0.5 1.0 VDD = 2.5 V VDD = 1.8 V Gain = 2 V/V RL = 8 Ω + 33 µH VCC = 5.5 V 0.5 1.0 1.5 PO − Output Power − W G001 2.0 G002 Figure 1. Figure 2. POWER DISSIPATION vs OUTPUT POWER POWER DISSIPATION vs OUTPUT POWER 0.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TYPICAL CHARACTERISTICS (continued) OUTPUT POWER vs SUPPLY VOLTAGE OUTPUT POWER vs SUPPLY VOLTAGE 2.5 2.0 L = 6.2 µH L = 3.3 µH Gain = 2 V/V RL = 8 Ω + 33 µH THD = 1% VCC = 4.5 V PO − Output Power − W PO − Output Power − W 2.5 1.5 1.0 L = 4.7 µH L = 2.2 µH 0.5 0.0 1.8 2.2 2.6 3.0 3.4 3.8 4.2 VDD − Supply Voltage − V L = 6.2 µH 2.0 1.5 L = 3.3 µH 1.0 L = 4.7 µH Gain = 2 V/V RL = 8 Ω + 33 µH THD = 1% VCC = 5.5 V 0.5 0.0 1.8 4.6 2.2 2.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TYPICAL CHARACTERISTICS (continued) TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 100 Gain = 2 V/V RL = 8 Ω + 33 µH VCC = 4.5 V 10 Gain = 2 V/V RL = 8 Ω + 33 µH VCC = 5.5 V 10 VDD = 1.8 V THD+N − % THD+N − % VDD = 1.8 V VDD = 2.5 V 1 VDD = 3.6 V 0.1 VDD = 2.5 V VDD = 3.6 V VDD = 4.2 V 1 0.1 VDD = 4.2 V 0.01 0.01 0.1 1 0.01 0.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TYPICAL CHARACTERISTICS (continued) TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY 10 10 Gain = 2 V/V RL = 8 Ω + 33 µH VCC = 5.5 V VDD = 3.6 V PO = 1 W 1 THD+N − % THD+N − % 1 0.1 0.01 Gain = 2 V/V PO = 250 mW RL = 4 Ω + 33 µH VCC = 4.5 V VDD = 3.6 V 0.1 VDD = 2.5 V 0.01 PO = 0.05 W PO = 0.25 W 0.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TYPICAL CHARACTERISTICS (continued) COMMON-MODE REJECTION RATIO vs FREQUENCY BOOST EFFICIENCY vs OUTPUT CURRENT 100 0 CMRR − dB −20 Gain = 2 V/V RL = 8 Ω VCC = 5.5 V 95 90 Boost Efficiency − % −10 −30 −40 −50 VDD = 3.6 V VDD = 1.8 V VDD = 2.5 V VDD = 4.2 V −60 85 VDD = 3.6 V 80 75 70 VDD = 1.8 V 65 −70 60 −80 55 −90 20 50 0.01 100 1k 10k 20k f − Frequency − Hz VCC = 4.5 V Figure 26.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 APPLICATION INFORMATION FULLY DIFFERENTIAL AMPLIFIER The TPA2013D1 is a fully differential amplifier with differential inputs and outputs. The fully differential amplifier consists of a differential amplifier with common-mode feedback. The differential amplifier ensures that the amplifier outputs a differential voltage on the output that is equal to the differential input times the gain.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 SETTING THE BOOST VOLTAGE Use Equation 1 to determine the value of R1 for a given VCC. The maximum recommended value for VCC is 5.5 V. The typical value of the VCCFB pin is 500 mV. The current through the resistor divider should be about 100 times greater than the current into the VCCFB pin, typically 0.01 μA. Based on those two values, the recommended value of R2 is 500 kΩ. VCC must be greater than 3 V and less than or equal to 5.5 V. æ 0.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 CAPACITOR SELECTION SURFACE MOUNT CAPACITORS Temperature and applied dc voltage influence the actual capacitance of high-K materials. Table 3 shows the relationship between the different types of high-K materials and their associated tolerances, temperature coefficients, and temperature ranges. Notice that a capacitor made with X5R material can lose up to 15% of its capacitance within its working temperature range.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TPA2013D1 CAPACITOR EQUATIONS The value of the boost capacitor is determined by the minimum value of working capacitance required for stability and the maximum voltage ripple allowed on VCC in the application. The minimum value of working capacitance is 10 μF. Do not use any component with a working capacitance less than 10 μF.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 RECOMMENDED INDUCTOR AND CAPACITOR VALUES BY APPLICATION Use Table 4 as a guide for determining the proper inductor and capacitor values. Table 4. Recommended Values Class-D Output Power (W) (1) Class-D Load (Ω) Minimum VDD (V) Required VCC (V) Max IL (A) L (μH) Inductor Vendor Part Numbers Max ΔV (mVpp) C (2) (μF) 3.3 1 8 3 4.3 0.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 CI = 1 (2 ´ p ´ fc ´ RI ) (7) Any mismatch in capacitance between the two inputs inputs will cause a mismatch in the corner frequencies. Choose capacitors with a tolerance of ±10% or better. FILTER FREE OPERATION AND FERRITE BEAD FILTERS A ferrite bead filter can often be used if the design is failing radiated emissions without an LC filter and the frequency sensitive circuit is greater than 1 MHz.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 R1 62.5 kΩ R2 500 kΩ 1 mF 47 mF 4.7 mH To Battery 22 mF VDD SW VCCFB VCCOUT VCCIN CIN Left Channel Input IN– 1 mF VOUT+ IN+ TPA2013D1 CIN VOUT– GAIN GPIO ShutDown Boost CI SDb ShutDown ClassD SDd VDD IN– AGND PGND Right Channel Input 1 mF VO+ TPA2032D1 VO– IN+ CI GND SHUTDOWN Figure 32.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 BYPASSING THE BOOST CONVERTER Bypass the boost converter to drive the Class-D amplifier directly from the battery. Place a Shottky diode between the SW pin and the VCCIN pin. Select a diode that has an average forward current rating of at least 1A, reverse breakdown voltage of 10 V or greater, and a forward voltage as small as possible. See Figure 34 for an example of a circuit designed to bypass the boost converter.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 TA Max = TJMax - qJA PDmax = 150 - 80.64 (0.317) = 124°C (9) Equation 9 shows that the calculated maximum ambient temperature is 124°C at maximum power dissipation under the above conditions. The TPA2013D1 is designed with thermal protection that turns the device off when the junction temperature surpasses 150°C to prevent damage to the IC.
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TPA2013D1 www.ti.com SLOS520 – AUGUST 2007 Trace Width Recommended trace width at the solder balls is 75 μm to 100 μm to prevent solder wicking onto wider PCB traces. For high current pins (SW, PGND, VOUT+, VOUT–, VCCIN, and VCCOUT) of the TPA2013D1, use 100 μm trace widths at the solder balls and at least 500 μm PCB traces to ensure proper performance and output power for the device.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 27-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPA2013D1RGPR QFN RGP 20 3000 330.0 12.4 4.25 4.25 1.15 8.0 12.0 Q2 TPA2013D1YZHR DSBGA YZH 16 3000 180.0 8.4 2.35 2.35 0.81 4.0 8.0 Q1 TPA2013D1YZHR DSBGA YZH 16 3000 178.0 8.4 2.35 2.35 0.81 4.0 8.
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PACKAGE MATERIALS INFORMATION www.ti.com 27-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPA2013D1RGPR QFN RGP 20 3000 367.0 367.0 35.0 TPA2013D1YZHR DSBGA YZH 16 3000 182.0 182.0 17.0 TPA2013D1YZHR DSBGA YZH 16 3000 217.0 193.0 35.
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D: Max = 2.31 mm, Min = 2.25 mm E: Max = 2.31 mm, Min = 2.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.