Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Audio amplifier 1-channel (mono) Class D DSBGA 9 (1.2x1.3)

PWM

–

Internal

Oscillator

H-Bridge

Bias

Circuitry

IN+

IN-

Tobattery

TPA 2039D1

GND

O+

O-

IN+

GND

B1 B2

PGNDV

IN-

TPA2039D1

9-BALL 0.4mmPITCH

WAFERCHIP SCALEPACKAGE (YFF)

(TOP VIEWOFPCB)

1.214 mm

1.160 mm

TPA2039D1

www.ti.com

SLOS652A –DECEMBER 2009–REVISED JUNE 2010

3.2W Mono Class-D Audio Power Amplifier

With 12-dB Gain and Auto Short-Circuit Recovery

Check for Samples: TPA2039D1

FEATURES

APPLICATIONS

• Wireless or Cellular Handsets and PDAs

• Powerful Mono Class-D Speaker Amplifier

• Portable Navigation Devices

– 3.24 W (4 Ω, 5 V, 10% THDN)

• General Portable Audio Devices

– 2.57 W (4 Ω, 5 V, 1% THDN)

– 1.80 W (8 Ω, 5 V, 10% THDN)

DESCRIPTION

– 1.46 W (8 Ω, 5 V, 1% THDN)

The TPA2039D1 is a 3.2 W high efficiency filter-free

• +12 dB Fixed Gain

class-D audio power amplifier (class-D amp) with

• Integrated Image Reject Filter for DAC Noise

12 dB of fixed gain in a tiny 1.21 mm x 1.16 mm

Reduction

wafer chip scale package (WCSP). The device

requires only one external component.

• Low Output Noise of 27 mV

• Low Quiescent Current of 1.5 mA

Features like 93% efficiency, 1.5 mA quiescent

current, 0.1 mA shutdown current, 82-dB PSRR,

• Differential Input Impedance of 150 kΩ

27 mV output noise and improved RF immunity make

• Auto-Recovering Short-Circuit Protection

the TPA2039D1 class-D amplifier ideal for cellular

• Thermal-Overload Protection

handsets. A fast start-up time of 4 ms with no audible

pop makes the TPA2039D1 ideal for PDA and

• Filter-Free Mono Class-D Amp

smart-phone applications.

• 9-Ball 1,21 mm × 1,16 mm 0,4mm Pitch WCSP

APPLICATION CIRCUIT

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (20 pages)

PAGE 1
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 3.2W Mono Class-D Audio Power Amplifier With 12-dB Gain and Auto Short-Circuit Recovery Check for Samples: TPA2039D1 FEATURES APPLICATIONS • • • • 1 • • • • • • • • • Powerful Mono Class-D Speaker Amplifier – 3.24 W (4 Ω, 5 V, 10% THDN) – 2.57 W (4 Ω, 5 V, 1% THDN) – 1.80 W (8 Ω, 5 V, 10% THDN) – 1.
PAGE 2
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
PAGE 3
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 ELECTRICAL CHARACTERISTICS TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS |VOS| Output offset voltage (measured differentially) VI = 0 V, VDD = 2.5 V to 5.5 V |IIH| High-level EN input current VDD = 5.5 V, VEN = 5.5 V |IIL| Low-level EN input current VDD = 5.5 V, VEN = 0 V MIN TYP MAX 1 10 mV 50 mA 1 mA VDD = 5.5 V, no load 1.8 2.5 VDD = 3.6 V, no load 1.5 2.3 I(Q) Quiescent current VDD = 2.
PAGE 4
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com OPERATING CHARACTERISTICS (continued) VDD = 3.6 V, TA = 25°C, RL = 8 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS Short circuit protection threshold ISC Time for which output is disabled after a short circuit event, after which auto-recovery trials are continuously made TAR MIN TYP VDD = 3.6 V, VO+ shorted to VDD 2 VDD = 3.6 V, VO– shorted to VDD 2 VDD = 3.6 V, VO+ shorted to GND 2 VDD = 3.
PAGE 5
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 TEST SETUP FOR GRAPHS CI + Measurement Output OUT+ IN+ TPA2039D1 CI - IN- + Load 30 kHz Low Pass Filter OUTVDD Measurement Input - GND CS1 CS2 + VDD - 1. CI was shorted for any common-mode input voltage measurement. All other measurements were taken with CI = 0.1-mF (unless otherwise noted). 2. CS1 = 0.1mF is placed very close to the device. The optional CS2 = 10mF is used for datasheet graphs. 3.
PAGE 6
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com TYPICAL CHARACTERISTICS VDD = 3.6 V, CI = 0.1 mF, CS1 = 0.1 mF, CS2 = 10 mF, TA = 25°C, RL = 8 Ω (unless otherwise noted) EFFICIENCY vs OUTPUT POWER 100 100 90 90 80 80 70 70 60 50 40 RL = 8 Ω + 33 µH 30 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 60 50 40 RL = 4 Ω + 33 µH 30 20 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V 10 0 0.0 η − Efficiency − % η − Efficiency − % EFFICIENCY vs OUTPUT POWER VDD = 2.5 V VDD = 3.6 V VDD = 5.
PAGE 7
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 TYPICAL CHARACTERISTICS (continued) VDD = 3.6 V, CI = 0.1 mF, CS1 = 0.1 mF, CS2 = 10 mF, TA = 25°C, RL = 8 Ω (unless otherwise noted) SUPPLY CURRENT vs SUPPLY VOLTAGE SUPPLY CURRENT vs EN VOLTAGE 2.00 200 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V 1.75 IDD − Supply Current − nA IDD − Supply Current − mA RL = No Load RL = 8 Ω + 33 µH RL = 4 Ω + 33 µH 1.50 1.25 1.00 2.5 3.0 3.5 4.0 4.5 5.0 50 0.1 0.2 0.3 0.
PAGE 8
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VDD = 3.6 V, CI = 0.1 mF, CS1 = 0.1 mF, CS2 = 10 mF, TA = 25°C, RL = 8 Ω (unless otherwise noted) RL = 8 Ω + 33 µH VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V 10 1 0.1 100m 1 0.1 0.01 0.001 Figure 13. Figure 14. THD + NOISE vs FREQUENCY THD + NOISE vs FREQUENCY PO = 25 mW PO = 125 mW PO = 500 mW 1 0.1 0.01 0.001 1k f − Frequency − Hz 10k 20 100 1 0.1 0.01 0.
PAGE 9
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 TYPICAL CHARACTERISTICS (continued) VDD = 3.6 V, CI = 0.1 mF, CS1 = 0.1 mF, CS2 = 10 mF, TA = 25°C, RL = 8 Ω (unless otherwise noted) THD + NOISE vs COMMON MODE INPUT VOLTAGE 10 PO = 30 mW PO = 150 mW PO = 400 mW VDD = 2.5 V RL = 4 Ω + 33 µH 1 0.1 0.01 0.001 20 100 1k f − Frequency − Hz 10k THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % THD + NOISE vs FREQUENCY 20k VDD = 2.
PAGE 10
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) VDD = 3.6 V, CI = 0.1 mF, CS1 = 0.1 mF, CS2 = 10 mF, TA = 25°C, RL = 8 Ω (unless otherwise noted) COMMON MODE REJECTION RATIO vs COMMON MODE INPUT VOLTAGE CMRR − Common Mode Rejection Ratio − dB 0 RL = 8 Ω + 33 µH Frequency = 217 Hz −10 VDD = 2.5 V VDD = 3.6 V VDD = 5.0 V −20 −30 −40 −50 −60 −70 −80 −90 −100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.
PAGE 11
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 APPLICATION INFORMATION SHORT CIRCUIT AUTO-RECOVERY When a short-circuit event occurs, the TPA2039D1 goes to shutdown mode and activates the integrated auto-recovery process whose aim is to return the device to normal operation once the short-circuit is removed.
PAGE 12
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com For a flat low-frequency response, use large input coupling capacitors (0.1 mF or larger). X5R and X7R dielectric capacitors are recommended. To Battery Internal Oscillator VDD CS IN− PWM _ Differential Input H− Bridge VO− VO+ + IN+ GND Bias Circuitry EN TPA2039D1 Filter-Free Class D Figure 28.
PAGE 13
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 EFFICIENCY AND THERMAL INFORMATION The maximum ambient operating temperature of the TPA2039D1 depends on the load resistance, power supply voltage and heat-sinking ability of the PCB system. The derating factor for the YFF package is shown in the dissipation rating table.
PAGE 14
TPA2039D1 SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 www.ti.com PRINTED CIRCUIT BOARD LAYOUT In making the pad size for the WCSP balls, it is recommended that the layout use nonsolder mask defined (NSMD) land. With this method, the solder mask opening is made larger than the desired land area, and the opening size is defined by the copper pad width. Figure 32 shows the appropriate diameters for a WCSP layout. Figure 32.
PAGE 15
TPA2039D1 www.ti.com SLOS652A – DECEMBER 2009 – REVISED JUNE 2010 Package Dimensions D E Max = 1190µm Max = 1244µm Min = 1130µm Min = 1184µm REVISION HISTORY Changes from Original (December 2009) to Revision A • Page Changed the Package Dimensions table. D was Max = 1244mm, Min = 1184mm. E was Max = 1190mm, Min = 1130mm ...............................................................................................................................................................................
PAGE 16
PACKAGE OPTION ADDENDUM www.ti.
PAGE 17
PACKAGE MATERIALS INFORMATION www.ti.com 28-Sep-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) TPA2039D1YFFR DSBGA YFF 9 3000 180.0 8.4 TPA2039D1YFFT DSBGA YFF 9 250 180.0 8.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.34 1.34 0.81 4.0 8.0 Q1 1.34 1.34 0.81 4.0 8.
PAGE 18
PACKAGE MATERIALS INFORMATION www.ti.com 28-Sep-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPA2039D1YFFR DSBGA YFF 9 3000 182.0 182.0 17.0 TPA2039D1YFFT DSBGA YFF 9 250 182.0 182.0 17.
PAGE 19
PAGE 20
IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.