Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsLinear ICsLinear IC - Audio amplifier 1-channel (mono) Class AB MSOP 8 PowerPad



     

SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

D Fully Specified for 3.3-V and 5-V Operation

D Wide Power Supply Compatibility

2.5 V − 5.5 V

D Output Power

− 700 mW at V

= 5 V, BTL, R

= 8 Ω

− 85 mW at V

= 5 V, SE, R

= 32 Ω

− 250 mW at V

= 3.3 V, BTL, R

= 8 Ω

− 37 mW at V

= 3.3 V, SE, R

= 32 Ω

D Shutdown Control

− I

= 7 µA at 3.3 V

− I

= 50 µA at 5 V

D BTL to SE Mode Control

D Integrated Depop Circuitry

D Thermal and Short-Circuit Protection

D Surface-Mount Packaging

− SOIC

− PowerPAD MSOP

description

The TPA711 is a bridge-tied load (BTL) or

single-ended (SE) audio power amplifier devel-

oped especially for low-voltage applications where internal speakers and external earphone operation are

required. Operating with a 3.3-V supply, the TPA711 can deliver 250-mW of continuous power into a BTL 8-Ω

load at less than 0.6% THD+N throughout voice band frequencies. Although this device is characterized out

to 20 kHz, its operation is optimized for narrower band applications such as wireless communications. The BTL

configuration eliminates the need for external coupling capacitors on the output in most applications, which is

particularly important for small battery-powered equipment. A unique feature of the TPA711 is that it allows the

amplifier to switch from BTL to SE on the fly when an earphone drive is required. This eliminates complicated

mechanical switching or auxiliary devices just to drive the external load. This device features a shutdown mode

for power-sensitive applications with special depop circuitry to eliminate speaker noise when exiting shutdown

mode. The TPA711 is available in an 8-pin SOIC and the surface-mount PowerPAD MSOP package, which

reduces board space by 50% and height by 40%.

Audio

Input

Bias

Control

700 mW

BYPASS

SE/BTL

SHUTDOWN

From HP Jack

−8

GND

From System Control

−

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications o

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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SHUTDOWN

BYPASS

SE/BTL

−

GND

D OR DGN PACKAGE

(TOP VIEW)

PowerPAD is a trademark of Texas Instruments.

Summary of content (39 pages)

PAGE 1
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 D Fully Specified for 3.3-V and 5-V Operation D Wide Power Supply Compatibility D D D D 2.5 V − 5.5 V D Output Power − 700 mW at VDD = 5 V, BTL, RL = 8 Ω − 85 mW at VDD = 5 V, SE, RL = 32 Ω − 250 mW at VDD = 3.3 V, BTL, RL = 8 Ω − 37 mW at VDD = 3.3 V, SE, RL = 32 Ω Shutdown Control − IDD = 7 µA at 3.
PAGE 2
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 AVAILABLE OPTIONS PACKAGED DEVICES TA SMALL OUTLINE† (D) MSOP SYMBOLIZATION MSOP‡ (DGN) −40°C to 85°C TPA711D TPA711DGN ABB † In the SOIC package, the maximum RMS output power is thermally limited to 350 mW; 700 mW peaks can be driven, as long as the RMS value is less than 350 mW. ‡ The D and DGN packages are available taped and reeled. To order a taped and reeled part, add the suffix R to the part number (e.g.
PAGE 3
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 recommended operating conditions ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Supply voltage, VDD SHUTDOWN High-level voltage, VIH MIN MAX 2.5 5.5 0.9VDD 0.
PAGE 4
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 electrical characteristics at specified free-air temperature, VDD = 5 V, TA = 25°C (unless otherwise noted) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ
PAGE 5
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 PARAMETER MEASUREMENT INFORMATION VDD 6 RF VDD/2 Audio Input RI VDD CS 4 IN 2 BYPASS − CI VO+ 5 + CB RL = 8 Ω − VO− 8 + 1 SHUTDOWN 3 SE/BTL 7 GND Bias Control Figure 1. BTL Mode Test Circuit VDD 6 RF VDD/2 Audio Input RI VDD CS 4 IN 2 BYPASS − CI VO+ 5 + CO CB RL = 32 Ω − VO− 8 + VDD 1 SHUTDOWN 3 SE/BTL 7 GND Bias Control Figure 2.
PAGE 6
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS Table of Graphs FIGURE IDD PO Supply ripple rejection ratio vs Frequency Supply current vs Supply voltage Output power THD + N Vn PD 8, 9 vs Load resistance 10, 11 vs Frequency 12, 13, 16, 17, 20, 21, 24, 25, 28, 29, 32, 33 vs Output power 14, 15, 18, 19, 22, 23, 26, 27, 30, 31, 34, 35 Total harmonic distortion plus noise Open loop gain and phase vs Frequency 36, 37 Close
PAGE 7
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS SUPPLY CURRENT vs SUPPLY VOLTAGE SUPPLY RIPPLE REJECTION RATIO vs FREQUENCY 1.8 RL = 8 Ω CB = 1 µF BTL −10 −20 1.6 SHUTDOWN = 0 V RF = 10 kΩ I DD − Supply Current − mA 1.4 −30 −40 −50 −60 −70 VDD = 3.3 V −80 VDD = 5 V −90 20 100 BTL (SE/BTL = 0.1 VDD) 1.2 1 0.8 SE (SE/BTL = 0.9 VDD) 0.6 0.4 0.2 0 2.5 −100 10k 1k 20k 3 3.5 4 4.5 5 5.
PAGE 8
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS OUTPUT POWER vs SUPPLY VOLTAGE OUTPUT POWER vs SUPPLY VOLTAGE 1000 350 THD+N 1% f = 1 kHz BTL THD+N = 1% f = 1 kHz SE 300 PO − Output Power − mW PO − Output Power − mW 800 600 RL = 8 Ω 400 RL = 32 Ω 250 200 RL = 8 Ω 150 100 RL = 32 Ω 200 50 0 2.5 3 3.5 4 4.5 5 0 2.5 5.5 3 3.5 VDD − Supply Voltage − V Figure 8 5 5.
PAGE 9
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 10 VDD = 3.3 V PO = 250 mW RL = 8 Ω BTL THD+N −Total Harmonic Distortion + Noise − % THD+N −Total Harmonic Distortion + Noise − % 10 AV =− 20 V/V 1 AV = −10 V/V AV = −2 V/V 0.1 0.01 20 100 1k 10k VDD = 3.3 V RL = 8 Ω AV = −2 V/V BTL PO = 50 mW 1 0.1 PO = 125 mW PO = 250 mW 0.
PAGE 10
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 10 VDD = 5 V PO = 700 mW RL = 8 Ω BTL THD+N −Total Harmonic Distortion + Noise − % THD+N −Total Harmonic Distortion + Noise − % 10 AV = −20 V/V 1 AV = −10 V/V AV = −2 V/V 0.1 0.01 20 100 1k 10k 20k VDD = 5 V RL = 8 Ω AV = −2 V/V BTL 1 PO = 700 mW 0.1 PO = 350 mW 0.
PAGE 11
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 10 THD+N −Total Harmonic Distortion + Noise − % THD+N −Total Harmonic Distortion + Noise − % 10 VDD = 3.3 V PO = 30 mW RL = 32 Ω SE 1 AV = −10 V/V 0.1 AV = −1 V/V 0.01 AV = −5 V/V 0.001 20 100 1k 10k VDD = 3.3 V RL = 32 Ω AV = −1 V/V SE 1 0.1 PO = 10 mW 0.
PAGE 12
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 10 VDD = 5 V PO = 60 mW RL = 32 Ω SE THD+N −Total Harmonic Distortion + Noise − % THD+N −Total Harmonic Distortion + Noise − % 10 AV = −10 V/V 1 AV = −5 V/V 0.1 0.01 AV = −1 V/V 0.001 20 100 1k 10k VDD = 5 V RL = 32 Ω AV = −1 V/V SE 1 PO = 15 mW 0.1 PO = 30 mW 0.
PAGE 13
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 1 THD+N −Total Harmonic Distortion + Noise − % THD+N −Total Harmonic Distortion + Noise − % 1 VDD = 3.3 V PO = 0.1 mW RL = 10 kΩ SE 0.1 AV = −5 V/V 0.01 AV = −2 V/V AV = −1 V/V 0.001 20 100 1k 10k VDD = 3.3 V RL = 10 kΩ CB = 1 µF AV = −1 V/V SE 0.1 PO = 0.13 mW PO = 0.05 mW 0.
PAGE 14
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION PLUS NOISE vs FREQUENCY 1 VDD = 5 V PO = 0.3 mW RL = 10 kΩ SE THD+N −Total Harmonic Distortion + Noise − % THD+N −Total Harmonic Distortion + Noise − % 1 0.1 AV = −5 V/V 0.01 AV = −2 V/V AV = −1 V/V 0.001 20 100 1k 10k VDD = 5 V RL = 10 kΩ AV = −1 V/V SE 0.1 PO = 0.3 mW PO = 0.2 mW 0.01 PO = 0.1 mW 0.
PAGE 15
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS OPEN-LOOP GAIN AND PHASE vs FREQUENCY 80 180° VDD = 3.
PAGE 16
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS CLOSED-LOOP GAIN AND PHASE vs FREQUENCY 1 180° Phase 0.75 170° 0.25 0 160° Gain −0.25 150° −0.5 −0.75 140° −1 −1.25 −1.5 −1.75 −2 101 Phase Closed-Loop Gain − dB 0.5 VDD = 3.3 V RL = 8 Ω PO = 250 mW BTL 130° 102 103 104 105 106 120° f − Frequency − Hz Figure 38 CLOSED-LOOP GAIN AND PHASE vs FREQUENCY 1 180° Phase 0.75 170° 0.25 0 160° Gain −0.25 150° −0.5 −0.
PAGE 17
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS CLOSED-LOOP GAIN AND PHASE vs FREQUENCY 7 180° Phase 6 170° 5 160° 4 150° 3 140° 2 0 −1 −2 101 130° VDD = 3.
PAGE 18
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS OUTPUT NOISE VOLTAGE vs FREQUENCY 100 VDD = 3.
PAGE 19
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 TYPICAL CHARACTERISTICS POWER DISSIPATION vs OUTPUT POWER POWER DISSIPATION vs OUTPUT POWER 800 200 180 RL = 8 Ω PD − Power Dissipation − mW PD − Power Dissipation − mW 700 600 500 400 300 RL = 32 Ω 200 VDD = 5 V BTL 100 RL = 8 Ω 160 140 120 100 80 60 RL = 32 Ω 40 VDD = 5 V SE 20 0 0 200 400 600 800 1000 0 0 PD − Output Power − mW 50 100 150 200 250 300 PD − Output Power − mW Figure 46
PAGE 20
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION bridged-tied load versus single-ended mode Figure 48 shows a linear audio power amplifier (APA) in a BTL configuration. The TPA711 BTL amplifier consists of two linear amplifiers driving both ends of the load. There are several potential benefits to this differential drive configuration but initially consider power to the load.
PAGE 21
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION bridged-tied load versus single-ended mode (continued) For example, a 68-µF capacitor with an 8-Ω speaker would attenuate low frequencies below 293 Hz. The BTL configuration cancels the dc offsets, which eliminates the need for the blocking capacitors. Low-frequency performance is then limited only by the input network and speaker response.
PAGE 22
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION BTL amplifier efficiency (continued) Although the voltages and currents for SE and BTL are sinusoidal in the load, currents from the supply are very different between SE and BTL configurations. In an SE application the current waveform is a half-wave rectified shape, whereas in BTL it is a full-wave rectified waveform. This means RMS conversion factors are different.
PAGE 23
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION application schematic Figure 51 is a schematic diagram of a typical handheld audio application circuit, configured for a gain of −10 V/V. CF 5 pF RF 50 kΩ VDD 6 VDD VDD/2 Audio Input RI 10 kΩ CI 0.47 µF 4 IN 2 BYPASS − VO+ 5 CC 330 µF CS 1 µF + 1 kΩ CB 2.2 µF − VO− 8 + From System Control 0.1 µF 1 SHUTDOWN 3 SE/BTL 7 GND Bias Control 100 kΩ VDD 100 kΩ Figure 51.
PAGE 24
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION component selection (continued) As an example consider an input resistance of 10 kΩ and a feedback resistor of 50 kΩ. The BTL gain of the amplifier would be −10 V/V and the effective impedance at the inverting terminal would be 8.3 kΩ, which is well within the recommended range.
PAGE 25
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION component selection (continued) In this example, CI is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and the feedback resistor (RF) to the load.
PAGE 26
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION component selection (continued) The output coupling capacitor required in single-supply SE mode also places additional constraints on the selection of other components in the amplifier circuit.
PAGE 27
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION SE/BTL operation The ability of the TPA711 to easily switch between BTL and SE modes is one of its most important cost-saving features. This feature eliminates the requirement for an additional earphone amplifier in applications where internal speakers are driven in BTL mode but external earphone or speaker must be accommodated.
PAGE 28
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION 5-V versus 3.3-V operation The TPA711 operates over a supply range of 2.5 V to 5.5 V. This data sheet provides full specifications for 5-V and 3.3-V operation, as these are considered to be the two most common standard voltages. There are no special considerations for 3.3-V versus 5-V operation with respect to supply bypassing, gain setting, or stability.
PAGE 29
SLOS230D − NOVEMBER 1998 − REVISED OCTOBER 2002 APPLICATION INFORMATION headroom and thermal considerations (continued) This is valuable information to consider when attempting to estimate the heat dissipation requirements for the amplifier system. Comparing the absolute worst case, which is 700 mW of continuous power output with 0 dB of headroom, against 12 dB and 15 dB applications drastically affects maximum ambient temperature ratings for the system.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com (4) 18-Oct-2013 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPA711DGNR MSOPPower PAD DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 TPA711DGNR MSOPPower PAD DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1 TPA711DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.
PAGE 33
PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPA711DGNR MSOP-PowerPAD DGN 8 2500 364.0 364.0 27.0 TPA711DGNR MSOP-PowerPAD DGN 8 2500 358.0 335.0 35.0 TPA711DR SOIC D 8 2500 367.0 367.0 35.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.