Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - ELCs High side SOIC 8

TPS2010, TPS2011, TPS2012, TPS2013

POWER-DISTRIBUTION

SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

95-mΩ Max (5.5-V Input) High-Side MOSFET

Switch With Logic Compatible Enable Input

Short-Circuit and Thermal Protection

Typical Short-Circuit Current Limits:

0.4 A, TPS2010; 1.2 A, TPS2011;

2 A, TPS2012; 2.6 A, TPS2013

Electrostatic-Discharge Protection, 12-kV

Output, 6-kV All Other Terminals

Controlled Rise and Fall Times to Limit

Current Surges and Minimize EMI

SOIC-8 Package Pin Compatible With the

Popular Littlefoot Series When GND Is

Connected

2.7-V to 5.5-V Operating Range

10-µA Maximum Standby Current

Surface-Mount SOIC-8 and TSSOP-14

Packages

–40°C to 125°C Operating Junction

Temperature Range

description

The TPS201x family of power-distribution switches is intended for applications where heavy capacitive loads

and short circuits are likely to be encountered. The high-side switch is a 95-mΩ N-channel MOSFET. Gate drive

is provided by an internal driver and charge pump designed to control the power switch rise times and fall times

to minimize current surges during switching. The charge pump operates at 100 kHz, requires no external

components, and allows operation from supplies as low as 2.7 V. When the output load exceeds the current-limit

threshold or a short circuit is present, the TPS201x limits the output current to a safe level by switching into a

constant-current mode. Continuous heavy overloads and short circuits increase power dissipation in the switch

and cause the junction temperature to rise. If the junction temperature reaches approximately 180°C, a thermal

protection circuit shuts the switch off to prevent damage. Recovery from thermal shutdown is automatic once

the device has cooled sufficiently.

The members of the TPS201x family differ only in short-circuit current threshold. The TPS2010 is designed to

limit at 0.4-A load; the other members of the family limit at 1.2 A, 2 A, and 2.6 A (see the available options table).

The TPS201x family is available in 8-pin small-outline integrated circuit (SOIC) and 14-pin thin shink

small-outline (TSSOP) packages and operates over a junction temperature range of –40°C to 125°C. Versions

in the 8-pin SOIC package are drop-in replacements for Siliconix’s Littlefoot power PMOS switches, except

that GND must be connected.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

GND

OUT

D PACKAGE

(TOP VIEW)

GND

OUT

PW PACKAGE

(TOP VIEW)

Summary of content (21 pages)

PAGE 1
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 D D D D D D D D D D D PACKAGE (TOP VIEW) 95-mΩ Max (5.5-V Input) High-Side MOSFET Switch With Logic Compatible Enable Input Short-Circuit and Thermal Protection Typical Short-Circuit Current Limits: 0.4 A, TPS2010; 1.2 A, TPS2011; 2 A, TPS2012; 2.
PAGE 2
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 AVAILABLE OPTIONS TJ PACKAGED DEVICES RECOMMENDED MAXIMUM CONTINUOUS LOAD CURRENT (A) TYPICAL SHORT-CIRCUIT OUTPUT CURRENT LIMIT AT 25°C (A) SOIC (D)† TSSOP (PW)‡ CHIP FORM (Y) 0.2 0.4 TPS2010D TPS2010PWLE TPS2010Y 0.6 1.2 TPS2011D TPS2011PWLE TPS2011Y 1 2 TPS2012D TPS2012PWLE TPS2012Y – 40°C to 125°C 1.5 2.6 TPS2013D TPS2013PWLE TPS2013Y † The D package is available taped and reeled.
PAGE 3
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 detailed description (continued) driver The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and fall times of the output voltage.
PAGE 4
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 BONDING PAD ASSIGNMENTS (8) (1) (7) GND IN IN EN (1) (8) (2) (7) (3) TPS201xY (4) (6) (5) OUT OUT OUT OUT (2) 81 (3) CHIP THICKNESS: 15 MILS TYPICAL BONDING PADS: 4 × 4 MILS MINIMUM TJmax = 150°C TOLERANCES ARE ± 10% (4) (5) (6) ALL DIMENSIONS ARE IN MILS 72 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Input voltage range, VI(IN) (see Note
PAGE 5
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 recommended operating conditions Input voltage, VI(IN) Input voltage, VI at EN Continuous output current current, IO MIN MAX 2.7 5.5 V V 0 5.5 TPS2010 0 0.2 TPS2011 0 0.6 TPS2012 0 1 TPS2013 0 1.5 – 40 125 Operating virtual junction temperature, TJ UNIT A °C electrical characteristics over recommended operating junction temperature range, VI(IN) = 5.
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TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 electrical characteristics over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 0 V (unless otherwise noted) (continued) supply current PARAMETER TEST CONDITIONS TPS2010, TPS2011 TPS2012, TPS2013 MIN UNIT TYP MAX 1 level output Supply current current, low low-level TJ = 25°C – 40°C ≤ TJ ≤ 125°C 0.
PAGE 7
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 4 2 0 6 4 2 0 –1 6 Enable Voltage – V 6 V O – Output Voltage – V V O – Output Voltage – V Enable Voltage – V PARAMETER MEASUREMENT INFORMATION 0 1 2 3 4 5 6 7 8 9 4 2 0 6 4 2 0 –1 0 5 10 t – Time – ms Enable Voltage – V 4 2 0 4 2 0 0 1 2 3 4 5 20 25 30 35 40 45 Figure 2. Propagation Delay and Fall Time With 1-µF Load, VI(IN) = 5.
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TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 V O – Output Voltage – V 5 0 8 6 I O – Output Current – A I O – Output Current – A V O – Output Voltage – V PARAMETER MEASUREMENT INFORMATION 4 2 0 –1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 8 6 4 2 0 –1 0 0.5 1 t – Time – ms 5 0 8 2.5 3 3.5 4 4.5 5 0 8 6 I O – Output Current – A I O – Output Current – A 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 4 2 0 –1 0 t – Time – ms 0.
PAGE 9
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 V O – Output Voltage – V V O – Output Voltage – V PARAMETER MEASUREMENT INFORMATION 5 0 I O – Output Current – A I O – Output Current – A 0 4 3 3 2 1 0 –1 5 0 2 4 6 8 10 12 14 16 18 20 2 1 0 –1 0 2 4 6 t – Time – ms V O – Output Voltage – V V O – Output Voltage – V 12 14 16 18 20 Figure 10. TPS2011 – Threshold Current, VI(IN) = 5.
PAGE 10
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 PARAMETER MEASUREMENT INFORMATION 3 IO – Output Current – A 2.5 TPS2013 2 TPS2012 1.5 TPS2011 1 0.5 TPS2010 0 –1 0 1 2 3 4 5 6 7 8 9 10 t – Time – ms Figure 13. Turned-On (Enabled) Into Short Circuit, VI(IN) = 5.
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TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS TURN-ON DELAY TIME vs INPUT VOLTAGE TURN-OFF DELAY TIME vs INPUT VOLTAGE 4.9 25 TJ = 25°C RL = 50 Ω CL = 1 µF TJ = 25°C RL = 50 Ω CL = 1 µF Turn-Off Delay Time – ms Turn-On Delay Time – ms 4.7 4.5 4.3 4.1 3.9 20 15 10 3.7 3.5 2.5 3 3.5 4.5 4 5 5 2.5 5.5 3 3.5 VI – Input Voltage – V Figure 15 4.5 5 5.
PAGE 12
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS SUPPLY CURRENT (OUTPUT DISABLED) vs JUNCTION TEMPERATURE SUPPLY CURRENT (OUTPUT ENABLED) vs JUNCTION TEMPERATURE 10 IO = 0 A 70 I DD – Supply Current (Output Disabled) – µ A I DD – Supply Current (Output Enabled) – µ A 80 VI = 5.5 V 60 50 40 VI = 2.7 V 30 20 – 50 1 0.1 VI = 5.5 V 0.01 VI = 2.7 V 0.
PAGE 13
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS ON-STATE RESISTANCE vs JUNCTION TEMPERATURE ON-STATE RESISTANCE vs INPUT VOLTAGE 190 140 170 130 ron – On-State Resistance – mΩ ron – On-State Resistance – mΩ TJ = 25°C 150 VI = 2.7 V 130 110 ÁÁ ÁÁ VI = 3 V VI = 4.5 V – 25 0 100 25 90 80 70 VI = 5.5 V 50 – 50 110 ÁÁ ÁÁ 90 70 120 50 75 100 60 2.5 125 TJ – Junction Temperature – °C 3 Figure 23 4 4.
PAGE 14
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 TYPICAL CHARACTERISTICS THRESHOLD TRIP CURRENT vs INPUT VOLTAGE SHORT-CIRCUIT CURRENT vs JUNCTION TEMPERATURE 5.5 3 VI(IN) = 5.5 V 5 TPS2013 TPS2013 4.5 Short-Circuit Current – A Threshold Trip Current – A 2.5 TPS2012 4 3.5 TPS2011 3 2.5 TPS2012 2 1.5 TPS2011 1 TPS2010 1.5 2.5 TPS2010 0.5 2 3 3.5 4.5 4 5 0 – 50 5.
PAGE 15
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 APPLICATION INFORMATION overcurrent A sense FET is employed to check for overcurrent conditions. Unlike sense resistors and polyfuses, sense FETs do not increase series resistance to the current path. When an overcurrent condition is detected, the device maintains a constant output current and reduces the output voltage accordingly.
PAGE 16
TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 APPLICATION INFORMATION power dissipation and junction temperature The low on resistance of the N-channel MOSFET allows small surface-mount packages, such as SOIC or TSSOP to pass large currents. The thermal resistances of these packages are high compared to that of power packages; it is good design practice to check power dissipation and junction temperature.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS2010DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TPS2010PWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 TPS2011DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TPS2012DR SOIC D 8 2500 330.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS2010DR SOIC D 8 2500 340.5 338.1 20.6 TPS2010PWR TSSOP PW 14 2000 367.0 367.0 35.0 TPS2011DR SOIC D 8 2500 340.5 338.1 20.6 TPS2012DR SOIC D 8 2500 340.5 338.1 20.6 TPS2013DR SOIC D 8 2500 340.5 338.1 20.
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