Datasheet

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FEATURES

DESCRIPTION

TPS2014600mA

TPS20151 A

TPS2041B500mA

TPS2051B500mA

TPS2045A 250mA

TPS2049100mA

TPS2055A 250mA

TPS20611 A

TPS20651 A

TPS20681.5 A

TPS20691.5 A

TPS201xA 0.2 A -2 A

TPS202x0.2 A -2 A

TPS203x0.2 A -2 A

TPS2010A, TPS2011A

TPS2012A, TPS2013A

SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007

www.ti.com

POWER-DISTRIBUTION SWITCHES

• 33-m Ω (5-V Input) High-Side MOSFET Switch

• Short-Circuit and Thermal Protection

• Operating Range . . . 2.7 V to 5.5 V

• Logic-Level Enable Input

• Typical Rise Time. . . 6.1 ms

• Undervoltage Lockout

• Maximum Standby Supply Current. . . 10 μ A

• No Drain-Source Back-Gate Diode

• Available in 8-pin SOIC and 14-Pin TSSOP

Packages

• Ambient Temperature Range, – 40 ° C to 85 ° C

• 2-kV Human-Body-Model, 200-V

Machine-Model ESD Protection

The TPS201xA family of power distribution switches is intended for applications where heavy capacitive loads

and short circuits are likely to be encountered. These devices are 50-m Ω N-channel MOSFET high-side power

switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is

provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize

current surges during switching. The charge pump requires no external components and allows operation from

supplies as low as 2.7 V.

When the output load exceeds the current-limit threshold or a short is present, the TPS201xA limits the output

current to a safe level by switching into a constant-current mode. When continuous heavy overloads and short

circuits increase the power dissipation in the switch, causing the junction temperature to rise, a thermal

protection circuit shuts off the switch to prevent damage. Recovery from a thermal shutdown is automatic once

the device has cooled sufficiently. Internal circuitry ensures the switch remains off until valid input voltage is

present.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (29 pages)

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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 POWER-DISTRIBUTION SWITCHES FEATURES 1 • • • • • • • • • • • 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time. . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current. . .
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. DESCRIPTION (CONTINUED) The TPS201xA devices differ only in short-circuit current threshold. The TPS2010A limits at 0.3-A load, the TPS2011 at 0.9-A load, the TPS2012A at 1.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 DETAILED DESCRIPTION POWER SWITCH The power switch is an N-channel MOSFET with a maximum on-state resistance of 50 mΩ (VI(IN) = 5V). Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when disabled. CHARGE PUMP An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VI(IN) Input voltage range (2) VO(OUT) Output voltage range (2) VI(EN) Input voltage range IO(OUT) Continuous output current VALUE UNIT –0.3 to 6 V –0.3 to VI(IN) + 0.3 V –0.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 ELECTRICAL CHARACTERISTICS over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 0 V (unless otherwise noted) TEST CONDITIONS (1) PARAMETER MIN TYP MAX UNIT POWER SWITCH rDS(on) Static drain-source on-state resistance tr Rise time, output tf Rise time, output VI(IN) = 5 V, TJ = 25°C, IO = 1.5 A 33 36 VI(IN) = 5 V, TJ = 85°C, IO = 1.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 ELECTRICAL CHARACTERISTICS (Continued) over recommended operating junction temperature range, VI(IN) = 5.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 PARAMETER MEASUREMENT INFORMATION Figure 1. Test Circuit and Voltage Waveforms Table 1.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 8 Figure 2. Turnon Delay and Rise Time Figure 3. Turnoff Delay and Fall Time Figure 4. Turnon Delay and Rise Time With 1-μF Load Figure 5.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 Figure 6. Device Enabled Into Short Figure 7. TPS2010A, Ramped Load on Enabled Device Figure 8. TPS2011A, Ramped Load on Enabled Device Figure 9.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 10 Figure 10. TPS2013A, Ramped Load on Enabled Device Figure 11. TPS2013A, Inrush Current Figure 12. 7.9-Ω Load Connected to an Enabled TPS2010A Device Figure 13. 3.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 Figure 14. 3.7-Ω Load Connected to an Enabled TPS2011A Device Figure 15. 2.6-Ω Load Connected to an Enabled TPS2011A Device Figure 16. 2.6-Ω Load Connected to an Enabled TPS2012A Device Figure 17. 1.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 Figure 18. 1.2-Ω Load Connected to an Enabled TPS2013A Device Figure 19. 0.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 14 RISE TIME vs LOAD CURRENT FALL TIME vs LOAD CURRENT Figure 22. Figure 23. SUPPLY CURRENT (ENABLED) vs JUNCTION TEMPERATURE SUPPLY CURRENT (DISABLED) vs JUNCTION TEMPERATURE Figure 24. Figure 25.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 SUPPLY CURRENT (ENABLED) vs INPUT VOLTAGE SUPPLY CURRENT (DISABLED) vs INPUT VOLTAGE Figure 26. Figure 27. SHORT-CIRCUIT CURRENT LIMIT vs INPUT VOLTAGE SHORT-CIRCUIT CURRENT LIMIT vs JUNCTION TEMPERATURE Figure 28. Figure 29.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 16 STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs INPUT VOLTAGE STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE Figure 30. Figure 31. STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs INPUT VOLTAGE STATIC DRAIN-SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURE Figure 32. Figure 33.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 UNDERVOLTAGE LOCKOUT Figure 34.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 APPLICATION INFORMATION Figure 35. Typical Application POWER-SUPPLY CONSIDERATIONS A 0.01-μF to 0.1-μF ceramic bypass capacitor between IN and GND, close to the device, is recommended. Placing a high-value electrolytic capacitor on the output and input pins is recommended when the output load is heavy. This precaution reduces power supply transients that may cause ringing on the input.
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TPS2010A, TPS2011A TPS2012A, TPS2013A www.ti.com SLVS189C – DECEMBER 1998 – REVISED SEPTEMBER 2007 Where: TA = Ambient Temperature °C RθJA = Thermal resistance SOIC = 172°C/W Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees, repeat the calculation, using the calculated value as the new estimate. Two or three iterations are generally sufficient to get an acceptable answer.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPS2010ADR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TPS2011ADR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TPS2012ADR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TPS2013ADR SOIC D 8 2500 330.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS2010ADR SOIC D 8 2500 340.5 338.1 20.6 TPS2011ADR SOIC D 8 2500 340.5 338.1 20.6 TPS2012ADR SOIC D 8 2500 340.5 338.1 20.6 TPS2013ADR SOIC D 8 2500 340.5 338.1 20.6 TPS2013APWPR HTSSOP PWP 14 2000 367.0 367.0 35.
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