Datasheet

ELECTRICAL CHARACTERISTICS
TPS2049
www.ti.com ......................................................................................................................................... SLVS713A – OCTOBER 2006 – REVISED SEPTEMBER 2007
over recommended operating junction temperature range, V
I(IN)
= 5.5 V, I
O
= 90 mA, V
I( EN)
= 0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS
(1)
MIN TYP MAX UNIT
POWER SWITCH
Static drain-source
on-state resistance, 5-V
r
DS(on)
V
I(IN)
= 2.7 V or 5.5 V, I
O
= 90 A, – 40 ° C < T
J
< 125 ° C 400 650 m Ω
operation and 2.7-V
operation
t
r
Rise time, output V
I(IN)
= 2.7 V C
L
= 1 F, R
L
= 50 Ω , T
J
= 25 ° C 0.1 0.4 ms
t
f
Fall time, output V
I(IN)
= 2.7 V C
L
= 1 F, R
L
= 50 Ω , T
J
= 25 ° C 0.03 0.3 ms
ENABLE INPUT EN
V
IH
High-level input voltage 2.7 V ≤ V
I(IN)
≤ 5.5 V 2 V
V
IL
Low-level input voltage 2.7 V ≤ V
I(IN)
≤ 5.5 V 0.8 V
I
I
Input current V
I( EN)
= 0 V or V
I(EN)
= V
I(IN)
– 0.5 0.5 µ A
t
on
Turnon time C
L
= 1 µ F, R
L
= 50 Ω , T
J
= 25 ° C 1 ms
t
off
Turnoff time C
L
= 1 F, R
L
= 50 Ω , T
J
= 25 ° C 1 ms
CURRENT LIMIT
Short-circuit output V
I(IN)
= 5 V, OUT connected to GND, Device enabled into
I
OS
100 150 200 mA
current short-circuit, 10 ° C < T
J
< 40 ° C
I
OC_trip
Overcurrent trip threshold 10 ° C < T
J
< 40 ° C, 100 A/sec current rate increase 325 mA
Short-circuit response
2 µ s
time
SUPPLY CURRENT
T
J
= 25 ° C 0.5 1
Supply current, low-level output No load on OUT V
I( EN)
= 5.5 V µ A
– 40C ≤ T
J
≤ 125 ° C 0.5 5
T
J
= 25 ° C 43 60
Supply current, high-level output No load on OUT V
I( EN)
= 0 V µ A
– 40C ≤ T
J
≤ 125 ° C 43 70
OUT connected to
Leakage current V
I( EN)
= 5.5 V, – 40C ≤ T
J
≤ 125 ° C 1 µ A
ground
V
I(OUT)
= 5.5 V,
Reverse leakage current IN = ground T
J
= 25 ° C 0 µ A
V
I( EN)
= 0 V
UNDERVOLTAGE LOCKOUT
IN Low-level input voltage 2 2.5 V
IN Hysteresis T
J
= 25C 75 mV
OVERCURRENT OC
V
OL( OC)
Output low voltage I
O( OC)
= 5 mA 0.4 V
Off-state current V
O( OC)
= 5 V or 3.3 V 1 µ A
OC deglitch OC assertion or de-assertion 4 8 15 ms
THERMAL SHUTDOWN
(2)
Thermal shutdown threshold 135 ° C
Recovery from thermal shutdown 125 ° C
Hysteresis 10 ° C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
(2) The thermal shutdown only reacts under overcurrent conditions.
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