Datasheet

YFP, YZP, AND YZTPACKAGES
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C
B
2 1
A
C
B
1 2
A
TPS22921, TPS22922, TPS22922B
www.ti.com
SLVS749B NOVEMBER 2008REVISED MAY 2013
LOW INPUT VOLTAGE, ULTRA-LOW r
ON
LOAD SWITCHES
Check for Samples: TPS22921, TPS22922, TPS22922B
1
FEATURES
APPLICATIONS
Input Voltage: 0.9 V to 3.6 V PDAs
Ultra-Low ON Resistance (Typical Values) Cell Phones
r
ON
= 14 m at V
IN
= 3.6 V GPS Devices
r
ON
= 20 m at V
IN
= 2.5 V MP3 Players
r
ON
= 33 m at V
IN
= 1.8 V Peripheral Ports
r
ON
= 67 m at V
IN
= 1.2 V Portable Media Players
r
ON
= 116 m at V
IN
= 1.0 V RF Modules
2-A Maximum Continuous Switch Current
DESCRIPTION
Ultra-Low Quiescent Current:
TPS22921, TPS22922, and TPS22922B are ultra-low
Typical 78 nA at 1.8 V
r
ON
load switches with controlled turn on.
Ultra-Low Shutdown Current:
TPS22921/2/2B contain an ultra-low r
ON
P-channel
MOSFET that can operate over an input voltage
Typical 35 nA at 1.8 V
range of 0.9 V to 3.6 V. The switch is controlled by an
Low Threshold Control Input Enable the use of
on/off input (ON), which is capable of interfacing
1.2 V, 1.8 V, 2.5 V, or 3.3 V Logic
directly with low-voltage control signals. In TPS22922
Controlled Slew Rate to Avoid Inrush Currents
and in TPS22922B, a 120- on-chip load resistor is
added for output quick discharge when switch is
Typical Rise Times at V
IN
= 1.8 V
turned off. The rise time (slew rate) of the device is
TPS22921 and TPS22922: 30 μs
internally controlled in order to avoid inrush current:
TPS22922B: 200 μs
TPS22921 and TPS22922 feature a 30 μs rise time
whereas TPS22922B is 200 μs.
ESD Performance Tested Per JESD 22
3000-V Human-Body Model
TPS22921, TPS22922, and TPS22922B feature ultra-
(A114-B, Class II)
low quiescent and shutdown current and are available
in space-saving 6-terminals wafer-chip-scale
1000-V Charged-Device Model (C101)
packages (WCSP: YZP and YZT with 0.5-mm pitch
Six Terminal Wafer-Chip-Scale Package
and YFP with 0.4-mm pitch) which make them ideal
(nominal dimensions shown - see addendum
for portable electronics. The devices are
for details)
characterized for operation over the free-air
temperature range of –40°C to 85°C.
0.9 mm × 1.4 mm, 0.5-mm Pitch,
0.5-mm Height (YZP)
0.9 mm × 1.4 mm, 0.5-mm Pitch,
0.625-mm Height (YZT)
0.8 mm × 1.2 mm, 0.4-mm Pitch,
0.5-mm Height (YFP)
TERMINAL ASSIGNMENTS
C ON GND
B V
IN
V
OUT
A V
IN
V
OUT
2 1
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
UNLESS OTHERWISE NOTED this document contains
Copyright © 2008–2013, Texas Instruments Incorporated
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

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