Datasheet

TPS7201Q, TPS7225Q, TPS7230Q
TPS7233Q, TPS7248Q, TPS7250Q, TPS72xxY
MICROPOWER LOW-DROPOUT (LDO) VOLTAGE REGULATORS
SLVS102G – MARCH 1995 – REVISED JUNE 2000
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, I
O
= 10 mA, EN = 0 V, C
O
= 4.7 µF (CSR
†
= 1 Ω), T
J
= 25°C, SENSE/FB
shorted to OUT (unless otherwise noted)
PARAMETER
TEST CONDITIONS
‡
TPS72xxY
UNIT
PARAMETER
TEST
CONDITIONS
‡
MIN TYP MAX
UNIT
Ground current (active mode)
EN ≤ 0.5 V,
0 mA ≤ I
O
≤ 250 mA
V
I
= V
O
+ 1 V,
180 µA
Output current limit threshold V
O
= 0 V, V
I
= 10 V 0.6 A
Thermal shutdown junction temperature 165 °C
EN hysteresis voltage 50 mV
Minimum V
I
for active pass element 1.9 V
Minimum V
I
for valid PG I
PG
= 300 µA 1.1 V
electrical characteristics, I
O
= 10 mA, EN = 0 V, C
O
= 4.7 µF (CSR
†
= 1 Ω), T
J
= 25°C, FB shorted to
OUT at device leads (unless otherwise noted)
PARAMETER
TEST CONDITIONS
‡
TPS7201Y
UNIT
PARAMETER
TEST
CONDITIONS
‡
MIN TYP MAX
UNIT
Reference voltage (measured at FB with OUT
connected to FB)
V
I
= 3.5 V, I
O
= 10 mA 1.188 V
V
I
= 2.4 V,
§
50 µA ≤ I
O
≤ 100 mA 2.1
V
I
= 2.4 V,
§
100 mA ≤ I
O
≤ 200 mA 2.9
Pass-element series resistance (see Note 3)
V
I
= 2.9 V, 50 µA ≤ I
O
≤ 250 mA 1.6
Ω
V
I
= 3.9 V, 50 µA ≤ I
O
≤ 250 mA 1
V
I
= 5.9 V, 50 µA ≤ I
O
≤ 250 mA 0.8
Out
p
ut regulation
3 V ≤ V
I
≤ 10 V,
See Note 2
I
O
= 5 mA to 250 mA,
15
mV
O
u
tp
u
t
reg
u
lation
3 V ≤ V
I
≤ 10 V,
See Note 2
I
O
= 50 µA to 250 mA,
17
mV
V
I
=35V
I
O
= 50 µA 60
Ripple rejection
V
I
=
3
.
5
V
,
f = 120 Hz
I
O
= 250 mA,
See Note 2
50
dB
Output noise spectral density V
I
= 3.5 V, f = 120 Hz 2
µV/√Hz
V
I
=
3.5 V,
C
O
= 4.7 µF 235
Output noise voltage
V
I
=
3
.
5
V
,
10 Hz ≤ f ≤ 100 kHz,
†
C
O
= 10 µF 190
µVrms
CSR
†
= 1 Ω
C
O
= 100 µF 125
PG hysteresis voltage
¶
V
I
= 3.5 V, Measured at V
FB
12 mV
PG output low voltage
¶
V
I
= 2.13 V, I
PG
= 400 µA 0.1 V
FB input current
V
I
= 3.5 V
0.1 nA
†
CSR refers to the total series resistance, including the ESR of the capacitor, any series resistance added externally, and PWB trace resistance
to C
O
.
‡
Pulse-testing techniques are used to maintain virtual junction temperature as close as possible to ambient temperature; thermal effects must
be taken into account separately.
§
This voltage is not recommended.
¶
Output voltage programmed to 2.5 V with closed-loop configuration (see application information).
NOTES: 2 When V
I
< 2.9 V and I
O
> 100 mA simultaneously, pass element r
DS(on)
increases (see Figure 10) to a point such that the resulting
dropout voltage prevents the regulator from maintaining the specified tolerance range.
3 To calculate dropout voltage, use equation:
V
DO
= I
O
⋅ r
DS(on)
r
DS(on)
is a function of both output current and input voltage. The parametric table lists r
DS(on)
for V
I
= 2.4 V, 2.9 V, 3.9 V, and
5.9 V, which corresponds to dropout conditions for programmed output voltages of 2.5 V, 3 V, 4 V, and 6 V, respectively. For other
programmed values, refer to Figures 10 and 11.