Datasheet

TPS78915, TPS78918, TPS78925, TPS78928, TPS78930
ULTRALOW-POWER LOW-NOISE 100-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS300A – SEPTEMBER 2000 – REVISED MAY 2001
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
100-mA Low-Dropout Regulator
Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
Output Noise Typically 56 µV
RMS
(TPS78930)
Only 17 µA Quiescent Current at 100 mA
1 µA Quiescent Current in Standby Mode
Dropout Voltage Typically 115 mV at 100 mA
(TPS78930)
Over Current Limitation
–40°C to 125°C Operating Junction
Temperature Range
5-Pin SOT-23 (DBV) Package
description
The TPS789xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
TPS78930 exhibits only 56 µV
RMS
of output
voltage noise using 0.01 µF bypass and 10 µF
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS789xx series devices are ideal for
micropower operations, low output noise, and
where board space is limited.
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 115 mV at
100 mA of load current (TPS78930), and is
directly proportional to the load current. The
quiescent current is ultralow (17 µA typically) and
is stable over the entire range of output load
current (0 mA to 100 mA). Intended for use in
portable systems such as laptops and cellular
phones, the ultralow-dropout voltage feature and
ultralow-power operation result in a significant
increase in system battery operating life.
Copyright  2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
BYPASS
f – Frequency – Hz
1k 10k 100k
I
O
= 1 mA
V
I
= 4 V
C
o
= 4.7 µF
C
(byp)
= 0.1 µF
0
1000
200
400
600
1200
800
100
I
O
= 100 mA
nV/
Hz
Output Spectral Noise Density –
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
T
J
– Junction Temperature – °C
14
21
TPS78930
GROUND CURRENT
vs
JUNCTION TEMPERATURE
Ground Current – Aµ
V
I
= 4 V
C
o
= 4.7 µF
20
19
18
17
16
15
I
O
= 1 mA
I
O
= 100 mA
–40 5–25 20 35 65 110 12550–10 80
95