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DRC PACKAGE

(TOP VIEW)

1 10

2 9

3 8

4 7

D+

D–

1D+

1D–

2D+

2D–

GND

5 6

RSE PACKAGE

(TOP VIEW)

D+

D–

1D+

1D–

2D+

2D–

GND

RSE PACKAGE

(BOTTOM VIEW)

D+

D–

1D+

1D–

2D+

2D–

GND

TS3USB221E

www.ti.com

SCDS263B –SEPTEMBER 2009–REVISED JULY 2012

HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH

WITH SINGLE ENABLE AND IEC LEVEL 3 ESD PROTECTION

Check for Samples: TS3USB221E

FEATURES

• V

Operation of 2.5 V to 3.3 V

• Switch I/Os Accept Signals Up to 5.5 V

• 1.8-V Compatible Control-Pin Inputs

• Low-Power Mode When OE Is Disabled (1 μA)

• r

= 6 Ω Maximum

• Δr

= 0.2 Ω Typical

• C

io(on)

= 7 pF Maximum

• Low Power Consumption (30 μA Maximum)

• ESD Performance Tested Per JESD 22

– 7000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

• ESD Performance I/O Port to GND

– 12-kV Human Body Model (A114-B, Class II)

– ±7-kV Contact Discharge (IEC 61000-4-2)

• High Bandwidth (1 GHz Typical)

APPLICATIONS

• Routes Signals for USB 1.0, 1.1, and 2.0

DESCRIPTION/

ORDERING INFORMATION

The TS3USB221E is a high-bandwidth switch

specially designed for the switching of high-speed

USB 2.0 signals in handset and consumer

applications, such as cell phones, digital cameras,

and notebooks with hubs or controllers with limited

USB I/Os. The wide bandwidth (1 GHz) of this switch

allows signals to pass with minimum edge and phase

distortion. The device multiplexes differential outputs

from a USB host device to one of two corresponding

outputs. The switch is bidirectional and offers little or

no attenuation of the high-speed signals at the

outputs. It is designed for low bit-to-bit skew and high

channel-to-channel noise isolation, and is compatible

with various standards, such as high-speed USB 2.0

(480 Mbps).

The TS3USB221E integrates ESD protection cells on

all pins, is available in a SON package (3 mm ×

3 mm) as well as in a tiny μQFN package (2 mm ×

1.5 mm) and is characterized over the free air

temperature range from –40°C to 85°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (23 pages)

PAGE 1
TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE AND IEC LEVEL 3 ESD PROTECTION Check for Samples: TS3USB221E FEATURES 1 • • • • • • • • • • • VCC Operation of 2.5 V to 3.3 V Switch I/Os Accept Signals Up to 5.5 V 1.8-V Compatible Control-Pin Inputs Low-Power Mode When OE Is Disabled (1 μA) rON = 6 Ω Maximum ΔrON = 0.
PAGE 2
TS3USB221E SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 www.ti.com ORDERING INFORMATION PACKAGE (1) TA –40°C to 85°C (1) (2) (2) ORDERABLE PART NUMBER TOP-SIDE MARKING SON – DRC Reel of 3000 TS3USB221EDRCR ZVM QFN (μQFN) – RSE Reel of 3000 TS3USB221ERSER LGR or LGO Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
PAGE 3
TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VCC Supply voltage range VIN Control input voltage range (2) –0.5 4.6 V (3) –0.5 7 VI/O Switch I/O voltage range (2) V (3) (4) –0.
PAGE 4
TS3USB221E SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 www.ti.com ELECTRICAL CHARACTERISTICS (1) over operating free-air temperature range (unless otherwise noted) PARAMETER VIK Control inputs IIN IOZ (3) TEST CONDITIONS MIN TYP (2) MAX UNIT –1.8 V VCC = 3.6 V, 2.7 V, II = –18 mA VCC = 3.6 V, 2.7 V, 0 V, VIN = 0 V to 3.6 V ±1 μA VCC = 3.6 V, 2.7 V, VO = 0 V to 5.25 V, VI = 0 V, VIN = VCC or GND, Switch OFF ±1 μA VI/O = 0 V to 5.25 V ±2 VI/O = 0 V to 3.
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TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 DYNAMIC ELECTRICAL CHARACTERISTICS over operating range, TA = –40°C to 85°C, VCC = 2.5 V ±10%, GND = 0 V PARAMETER TYP (1) TEST CONDITIONS XTALK Crosstalk RL = 50 , f = 250 MHz -39 OIRR OFF isolation RL = 50 , f = 250 MHz -40 BW Bandwidth (3 dB) RL = 50 (1) 1 UNIT dB dB GHz For Max or Min conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
PAGE 6
TS3USB221E SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 www.ti.com APPLICATION INFORMATION 0 –20 –1 –30 –40 Attenuation (dB) Gain (dB) –2 –3 –4 –50 –60 –70 –5 –80 –6 –90 –100 –7 1E+6 1E+7 1E+8 1E+9 1E+6 1E+10 1E+7 1E+8 1E+9 1E+10 Frequency (Hz) Frequency (Hz) Figure 2. Gain vs Frequency Figure 3. OFF Isolation vs Frequency 3.5 -25 3.4 -45 3.3 -55 3.2 ron (Ω) Attenuation (dB) -35 -65 3.1 -75 -85 3.0 -95 2.9 VCC = 3.0 V VCC = 2.
PAGE 7
TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 3.5 3.4 ron (Ω) 3.3 3.2 3.1 3.0 2.9 VCC = 3.0 V VCC = 2.3 V 2.8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VIN (V) 0.5 0.5 0.4 0.4 0.3 0.3 Differential Signal (V) Differential Signal (V) Figure 6. ron vs VIN (IOUT = –30 mA) 0.2 0.1 0.0 –0.1 –0.2 0.2 0.1 0.0 –0.1 –0.2 –0.3 –0.3 –0.4 –0.4 –0.5 –0.5 0.0 0.2 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 –9 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.
PAGE 8
TS3USB221E SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 www.ti.com 0.5 0.4 Differential Signal (V) 0.3 0.2 0.1 0.0 –0.1 –0.2 –0.3 –0.4 –0.5 0.0 0.2 0.4 0.5 0.8 1.0 1.2 1.4 1.6 1.8 2.0 –9 Time (X 10 ) (s) Figure 9.
PAGE 9
TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 PARAMETER MEASUREMENT INFORMATION VCC 1D or 2D VOUT1 or VOUT2 VIN RL CL VCOM tON 500 Ω 50 pF V+ tOFF 500 Ω 50 pF V+ D CL(2) 1D or 2D VCTRL TEST RL S CL(2) Logic Input(1) RL GND 1.8 V Logic Input (VI) 50% 50% 0 tON tOFF Switch Output (VOUT1 or VOUT2) (1) (2) 90% 90% VOH VOL All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns, tf < 5 ns.
PAGE 10
TS3USB221E SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) VCC Network Analyzer Channel ON: 1D to D 50 W VOUT1 1D Channel OFF: 2D to D VIN Source Signal VCTRL = VCC or GND VOUT2 2D 50 W Network Analyzer Setup 50 W VCTRL S + Source Power = 0 dBm (632-mV P-P at 50-W load) GND DC Bias = 350 mV Figure 12.
PAGE 11
TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 PARAMETER MEASUREMENT INFORMATION (continued) 800 mV 50% 50% Input 400 mV tPLH tPHL VOH 50% Output VOL tSK(P) = | tPHL – tPLH | PULSE SKEW tSK(P) 800 mV 50% 50% Input 400 mV tPLH1 tPHL1 VOH 50% 50% Output 1 VOL tSK(O) tSK(O) VOH 50% 50% Output 2 tPLH2 VOL tPHL2 tSK(O) = | tPLH1 – tPLH2 | or | tPHL1 – tPHL2 | OUTPUT SKEW tSK(P) Figure 15.
PAGE 12
TS3USB221E SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) VCC VOUT1 1D VIN D + VOUT2 2D VCTRL + S OFF-State Leakage Current Channel OFF VCTRL = VIH or VIL + GND Figure 17. OFF-State Leakage Current VCC VOUT1 1D Capacitance Meter VBIAS = VCC or GND VOUT2 2D VCTRL = VCC or GND VIN D VBIAS Capacitance is measured at 1D, 2D, D, and S inputs during ON and OFF conditions. VCTRL S GND Figure 18.
PAGE 13
TS3USB221E www.ti.com SCDS263B – SEPTEMBER 2009 – REVISED JULY 2012 REVISION HISTORY Changes from Revision A (February 2010) to Revision B • Page Update TOP-SIDE MARKING for RSE package. .................................................................................................................
PAGE 14
PACKAGE OPTION ADDENDUM www.ti.
PAGE 15
PACKAGE OPTION ADDENDUM www.ti.com 9-Nov-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PAGE 16
PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TS3USB221EDRCR SON DRC 10 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 TS3USB221ERSER UQFN RSE 10 3000 180.0 8.4 1.68 2.13 0.76 4.0 8.0 Q1 TS3USB221ERSER UQFN RSE 10 3000 179.0 8.4 1.75 2.25 0.65 4.0 8.
PAGE 17
PACKAGE MATERIALS INFORMATION www.ti.com 26-Jan-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TS3USB221EDRCR SON DRC 10 3000 367.0 367.0 35.0 TS3USB221ERSER UQFN RSE 10 3000 202.0 201.0 28.0 TS3USB221ERSER UQFN RSE 10 3000 203.0 203.0 35.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.