Datasheet

RSW PACKAGE
(TOP VIEW)
1 2
5
8
4
9
3
10
67
D1+
D2+
D1–
D2–
D–
GND
D+
OE
V
CC
S
RSW PACKAGE
(BOTTOM VIEW)
D1+
D1–
D+
1 2
310
4
9
5
8
67
D2+
D2–
GND
D–
S
V
CC
OE
TS3USB30E
www.ti.com
SCDS255E DECEMBER 2008REVISED AUGUST 2012
ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps)
1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE
Check for Samples: TS3USB30E
1
FEATURES
V
CC
Operation at 3 V to 4.3 V
1.8-V Compatible Control-Pin Inputs
I
OFF
Supports Partial Power-Down-Mode
Operation
D+/D– Pins Tolerate up to 5.25V
r
ON
= 10 Max
Δr
ON
= 0.35 Typ
C
io(ON)
= 7.5 pF Typ
Low Power Consumption (1 μA Max)
–3 dB Bandwidth = 900 MHz Typ
Latch-Up Performance Exceeds
100 mA Per JESD 78, Class II
(1)
ESD Performance Tested Per JESD 22
8000-V Human-Body Model (A114-B,
Class II)
1000-V Charged-Device Model (C101)
ESD Performance I/O Port to GND
(2)
15000-V Human-Body Model
Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)
APPLICATIONS
Routes Signals for USB 1.0, 1.1, and 2.0
DGS PACKAGE
(TOP VIEW)
(1) Except OE and S inputs
(2) High-voltage HBM is performed in addition to the standard
HBM testing (A114-B, Class II) and applies to I/O ports tested
with respect to GND only.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2008–2012, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

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