Datasheet
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FEATURES
APPLICATIONS
SOT-23 PACKAGE
(TOP VIEW)
1
2
3
6
5
4
NO
GND
NC
COM
V
+
IN
DESCRIPTION/ORDERING INFORMATION
TS5A3159-EP
1- Ω SPDT ANALOG SWITCH
SCDS217B – DECEMBER 2005 – REVISED JANUARY 2006
• Low Total Harmonic Distortion
• Controlled Baseline • 1.65-V to 5.5-V Single-Supply Operation
– One Assembly/Test Site, One Fabrication • Latch-Up Performance Exceeds 100 mA Per
Site JESD 78, Class II
• Enhanced Diminishing Manufacturing • ESD Performance Tested Per JESD 22
Sources (DMS) Support
– 2000-V Human-Body Model
• Enhanced Product-Change Notification (A114-B, Class II)
• Qualification Pedigree
(1)
– 1000-V Charged-Device Model (C101)
• Specified Break-Before-Make Switching
• Low ON-State Resistance (1 Ω )
• Cell Phones
• Control Inputs Are 5-V Tolerant
• PDAs
• Low Charge Injection
• Portable Instrumentation
• Excellent ON-State Resistance Matching
(1) Component qualification in accordance with JEDEC and
industry standards to ensure reliable operation over an
extended temperature range. This includes, but is not liited to,
Highly Accelerated Stress Test (HAST) or biased 85/85,
temperature cycle, autoclave or unbiased HAST,
electromigration, bond intermetallic life, and mold compound
life. Such qualification testing should not be viewed as
justifying use of this componenet beyond specified
performance and environmental limits.
The TS5A3159-EP is a single-pole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to
5.5 V. The device offers a low ON-state resistance and an excellent ON-state resistance matching with the
break-before-make feature to prevent signal distortion during the transferring of a signal from one channel to
another. The device has excellent total harmonic distortion (THD) performance and consumes very low power.
These features make this device suitable for portable audio applications.
Summary of Characteristics
(1)
2:1 Multiplexer/
Configuration Demultiplexer
(1 × SPDT)
Number of channels 1
ON-state resistance (r
on
) 1.1 Ω
ON-state resistance match ( ∆ r
on
) 0.1 Ω
ON-state resistance flatness (r
on(flat)
) 0.15 Ω
Turn-on/turn-off time (t
ON
/t
OFF
) 20 ns/15 ns
Break-before-make time (t
BBM
) 12 ns
Charge injection (Q
C
) 36 pC
Bandwidth (BW) 100 MHz
OFF isolation (O
ISO
) –65 dB at 1 MHz
Crosstalk (X
TALK
) –66 dB at 1 MHz
Total harmonic distortion (THD) 0.01%
Leakage current (I
NO(OFF)
/(I
NC(OFF)
) ± 20 nA
Package option 6-pin DBV
(1) V
+
= 5 V and T
A
= 25 ° C
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005–2006, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.