Datasheet

TVP5160
www.ti.com SLES135E–FEBRUARY 2005–REVISED APRIL 2011
6.10 Memories Tested
Table 6-1. Memories Tested
MANUFACTURER PART NUMBER SIZE MBYTES SPEED PINS 3DYC 3DNR 3DYC+3DNR
Samsung K4S641632H-TC75 4 Meg x 16 8 MB 133 MHz 54 Y Y Y
Samsung K4S641632H-TC70 4 Meg x 16 8 MB 143 MHz 54 Y Y Y
Samsung K4S161622E-TC60 1 Meg x 16 2 MB 166 MHz 50 Y Y N
Samsung K4S161622H-TC60 1 Meg x 16 2 MB 166 MHz 54 Y Y N
Etron EM638165TS-6 4 Meg x 16 8 MB 166 MHz 54 Y Y Y
Etron EM638165TS-7 4 Meg x 16 8 MB 143 MHz 54 Y Y Y
Micron MT48LC8M16A2TG-75 8 Meg x 16 16 MB 133 MHz 54 Y Y Y
Micron MT48LC4M16A2TG-75 4 Meg x 16 8 MB 133 MHz 54 Y Y Y
ISSI IS42S16100C1-7TL 1 Meg x 16 2 MB 143 MHz 50 Y Y N
ISSI IS42S16400B-7TL 4 Meg x 16 8 MB 133 MHz 54 Y Y Y
6.11 Thermal Specification
(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Thermal pad soldered to 4-layer
θ
JA
Junction-to-ambient thermal resistance, still air 17.17 °C/W
High-K PCB
Thermal pad soldered to 4-layer
θ
JC
Junction-to-case thermal resistance, still air 0.12 °C/W
High-K PCB
T
J(MAX)
Maximum junction temperature for reliable operation 105 °C
(1) The exposed thermal pad must be soldered to a JEDEC High-K PCB with adequate ground plane. When split ground planes are used,
attach the thermal pad to the digital ground plane.
Copyright © 2005–2011, Texas Instruments Incorporated Electrical Specifications 103
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