Datasheet
1
B1
8
2
7
V
CCB
3 6
OE
4
5
B2
GND
V
CCA
A2 A1
V
CCB
B1
B2
OE
V
CCA
A1
A2
GND
1
2
3
4
8
7
6
5
A2
5
4
A1
3 6
OE
V
CCA
2
7
V
CCB
GND
8
B1
1
B2
A1
B1
C1
D1
A2
B2
C2
D2
TXS0102
www.ti.com
SCES640D –JANUARY 2007– REVISED MARCH 2011
2-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR
FOR OPEN-DRAIN AND PUSH-PULL APPLICATIONS
Check for Samples: TXS0102
1
FEATURES
TYPICAL LEVEL-SHIFTER
APPLICATIONS
2
• No Direction-Control Signal Needed
• I
2
C/SMBus
• Max Data Rates
• UART
– 24 Mbps (Push Pull)
• GPIO
– 2 Mbps (Open Drain)
• Available in the Texas Instruments NanoStar™
DCT OR DCU PACKAGE
(TOP VIEW)
Package
• 1.65 V to 3.6 V on A port and 2.3 V to 5.5 V on
B port (V
CCA
≤ V
CCB
)
• V
CC
Isolation Feature – If Either V
CC
Input Is at
GND, Both Ports Are in the High-Impedance
State
• No Power-Supply Sequencing Required –
Either V
CCA
or V
CCB
Can Be Ramped First
DQE OR DQM PACKAGE
• I
off
Supports Partial-Power-Down Mode
(TOP VIEW)
Operation
• Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
• ESD Protection Exceeds JESD 22
– A Port
YZP PACKAGE
– 2500-V Human-Body Model (A114-B)
(BOTTOM VIEW)
– 250-V Machine Model (A115-A)
– 1500-V Charged-Device Model (C101)
– B Port
– 8-kV Human-Body Model (A114-B)
– 250-V Machine Model (A115-A)
– 1500-V Charged-Device Model (C101)
DESCRIPTION/ORDERING INFORMATION
This two-bit non-inverting translator is a bidirectional voltage-level translator and can be used to establish digital
switching compatibility between mixed-voltage systems. It uses two separate configurable power-supply rails,
with the A ports supporting operating voltages from 1.65 V to 3.6 V while it tracks the V
CCA
supply, and the B
ports supporting operating voltages from 2.3 V to 5.5 V while it tracks the V
CCB
supply. This allows the support of
both lower and higher logic signal levels while providing bidirectional translation capabilities between any of the
1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.
When the output-enable (OE) input is low, all I/Os are placed in the high-impedance state, which significantly
reduces the power-supply quiescent current consumption.
To ensure the high-impedance state during power up or power down, OE should be tied to GND through a
pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NanoStar is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2007–2011, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.