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12 6

SEL

GND

I/O

RST

CLK

SIMCLK

BATT

VSIM

SIMI/O

SIMRST

RUT Package

(Top View)

Exposed

Thermal Pad

SEL

SIMCLK

GND

SIMRST

I/O

RST

CLK

BATT

VSIM

SIMI/O

RGT Package

(Top View)

TXS4555

www.ti.com

SBOS550B –FEBRUARY 2011–REVISED AUGUST 2013

1.8V/3V SIM Card Power Supply With Level Translator

Check for Samples: TXS4555

FEATURES

• Level Translator

– V

Range of 1.65 V to 3.3 V

– V

BATT

Range from 2.3 to 5.5V

• Low-Dropout (LDO) Regulator

– 50-mA LDO Regulator With Enable

– 1.8-V or 2.95-V Selectable Output Voltage

– 2.3-V to 5.5-V Input Voltage Range

– Very Low Dropout: 100mV (Max) at 50mA

• Incorporates Shutdown Feature for the SIM

Card Signals According to ISO-7816-3

• ESD Protection Exceeds JESD 22

– 2000-V Human-Body Model (A114-B)

– 500-V Charged-Device Model (C101)

– 8kV HBM for SIM Pins

• Package

Note: The Exposed center thermal pad must be

– 16-Pin QFN (3 mm x 3 mm)

connected to Ground

– 12-Pin QFN (2mm x 1.7mm)

DESCRIPTION

The TXS4555 is a complete Smart Identity Module

(SIM) card solution for interfacing wireless baseband

processors with a SIM card to store I/O for mobile

handset applications. The device complies with

ISO/IEC Smart-Card Interface requirements as well

as GSM and 3G mobile standards. It includes a high-

speed level translator capable of supporting Class-B

(2.95 V) and Class-C (1.8 V) interfaces, a low-

dropout (LDO) voltage regulator that has output

voltages that are selectable between 2.95-V Class-B

and 1.8-V Class-C interfaces.

The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and V

BATT

from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO

accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to

the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors

to SIM cards operating at 1.8 V or 2.95 V.

The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification

for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during

accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV

HBM protection for all the other pins.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (21 pages)

PAGE 1
TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.
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TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure.
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TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 Figure 2. Block Diagram VBATT Cin = 1 mF VSIM Vref R 1 Cout = 1 mF R 2 GND Figure 3.
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TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com EN SIM_RST SIM_CLK Active Data SIM_I/O VSIM Figure 4. Shutdown Sequence for SIM_RST, SIM_CLK, SIM_IO and VSIM The shutdown sequence for the SIM signals is based on the ISO 7816-3 specification. The shutdown sequence of these signals helps to properly disable these channels and not have any corruption of data accidently.
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TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range (unless otherwise noted) VALUE MIN MAX UNIT LEVEL TRANSLATOR VCC Supply voltage range VI Input voltage range Voltage range applied to any output in the high-impedance or power-off state VO Voltage range applied to any output in the high or low state VO –0.3 4.0 VCC-port –0.5 4.6 SIM-port –0.5 4.6 Control inputs –0.5 4.6 VCC -port –0.5 4.
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TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com RECOMMENDED OPERATING CONDITIONS (1) MIN MAX UNIT LEVEL TRANSLATOR VCC Supply voltage 1.65 3.3 EN, SEL, RST, CLK, I/O VCC × 0.7 VCC Vsim × 0.7 Vsim VIH High-level input voltage VCC - port SIM - port SIM_I/O VIL Low-level input voltage VCC - port EN, SEL, RST, CLK, I/O 0 VCC × 0.3 SIM - port SIM_I/O 0 Vsim × 0.
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TXS4555 www.ti.
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TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com TYPICAL CHARACTERISTICS 110 VBAT = 3.25 V, ILOAD = 50 mA -80 1.8 V Vsim 90 -70 -60 2.95 V Vsim -50 VBAT = 5.5 V 100 VDO - Dropout Voltage - mV PSRR - Power Supply Rejection Ratio - dB -90 -40 -30 -20 85°C Vsim 80 70 25°C Vsim 60 50 40 30 -40°C Vsim 20 -10 10 0 100 1k 10k f - Frequency - Hz 100k 0 1M 0 1 0 0.8 0.6 -0.2 0.4 0.2 -2 -2.2 -2.4 -40 -30 -20 -10 -50 mA, Vism 50 -40°C Vsim -0.6 -0.8 -1 85°C Vsim -1.
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TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 APPLICATION INFORMATION The LDO’s included on the TXS4555 achieve ultra-wide bandwidth and high loop gain, resulting in extremely high PSRR at very low headroom (VBAT – VSIM). The TXS4555 provides fixed regulation at 1.8V or 2.95V. Low noise, enable, low ground pin current make it ideal for portable applications. The device offers sub-bandgap output voltages, current limit and thermal protection, and is fully specified from –40°C to 125°C.
PAGE 10
TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com TRANSIENT RESPONSE As with any regulator, increasing the size of the output capacitor reduces over/undershoot magnitude but increases duration of the transient response. MINIMUM LOAD The TXS4555 is stable and well-behaved with no output load. Traditional PMOS LDO regulators suffer from lower loop gain at very light output loads.
PAGE 11
TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 REVISION HISTORY Changes from Revision A (March 2011) to Revision B Page • Removed Ordering Information table. ................................................................................................................................... 2 • Updated VIH and VIL to specify additional information. .........................................................................................................
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.com 26-Oct-2013 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PAGE 14
PACKAGE MATERIALS INFORMATION www.ti.com 27-Aug-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TXS4555RGTR QFN RGT 16 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 TXS4555RUTR UQFN RUT 12 3000 180.0 8.4 1.95 2.3 0.75 4.0 8.
PAGE 15
PACKAGE MATERIALS INFORMATION www.ti.com 27-Aug-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TXS4555RGTR QFN RGT 16 3000 367.0 367.0 35.0 TXS4555RUTR UQFN RUT 12 3000 202.0 201.0 28.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.