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UC1610

UC3610

SLUS339B − JUNE 1993 − REVISED DECEMBER 2004

DUAL SCHOTTKY DIODE BRIDGE

www.ti.com

FEATURES

Monolithic Eight-Diode Array

D Exceptional Efficiency

D Low Forward Voltage

D Fast Recovery Time

D High Peak Current

D Small Size

DESCRIPTION

This eight-diode array is designed for

high-current, low duty-cycle applications typical of

flyback voltage clamping for inductive loads. The

dual bridge connection makes this device

particularly applicable to bipolar driven stepper

motors.

The use of Schottky diode technology features

high efficiency through lowered forward voltage

drop and decreased reverse recovery time.

This single monolithic chip is fabricated in both

hermetic CERDIP and copper-leaded plastic

packages. The UC1610 in ceramic is designed for

−55°C to 125°C environments but with reduced

peak current capability. The UC2610 in plastic and

ceramic is designed for −25°C to 125°C

environments also with reduced peak current

capability; while the UC3610 in plastic has higher

current rating over a 0°C to 70°C temperature

range.

AVAILABLE OPTIONS

T T

Packaged Devices

= T

SOIC Wide (DW) DIL (J) DIL (N)

−55°C to 125°C UC1610DW UC1610J UC1610N

−25°C to 125°C UC2610DW UC2610J UC2610N

0°C to 70°C UC3610DW UC3610J UC3610N

THERMAL INFORMATION

PACKAGE θja θjc

SOIC (DW) 16 pin 50 − 100

(1)

DIP (J) 8 pin 125 − 160 20

(2)

DIP (N) 8 pin 103

(1)

NOTES: 1. Specified θja (junction-to-ambient) is for devices mounted to 5-in

FR4 PC board with one ounce copper where noted. When

resistance range is given, lower values are for 5-in

aluminum PC board. Test PWB was 0.062 in thick and typically used 0.635-mm

trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the

end of each trace.

2. θjc data values stated were derived from MIL−STD−1835B. MIL−STD−1835B states that the baseline values shown are worst case

(mean + 2s) for a 60-mil x 60-mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils.

For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, 10°C/W; pin grid array,

10°C/W.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Summary of content (13 pages)

PAGE 1
UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 DUAL SCHOTTKY DIODE BRIDGE FEATURES D Monolithic Eight-Diode Array D Exceptional Efficiency D Low Forward Voltage D Fast Recovery Time D High Peak Current D Small Size DESCRIPTION This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this device particularly applicable to bipolar driven stepper motors.
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UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 N OR J PACKAGE TOP VIEW DW PACKAGE TOP VIEW absolute maximum ratings over operating free-air temperature (unless otherwise noted)†} Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Peak forward current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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UC1610 UC3610 SLUS339B − JUNE 1993 − REVISED DECEMBER 2004 APPLICATION INFORMATION FORWARD CURRENT vs VOLTAGE 1000 5.0 500 3.0 2.0 300 200 1.0 T J = 125 °C 100 Forward Current − A 50 30 20 10 5 0.3 0.2 0.05 0.03 0.02 T J = 25 °C 0.005 3 2 T J = 125 °C 0.003 0.002 0.001 1 0 10 20 30 40 0 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage − V Reverse Voltage − V Figure 1 Figure 2 REVERSE RECOVERY CHARACTERISTICS FORWARD RECOVERY CHARACTERISTICS I F = 0.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE OPTION ADDENDUM www.ti.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device UC3610DWTR Package Package Pins Type Drawing SOIC DW 16 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2000 330.0 16.4 Pack Materials-Page 1 10.75 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 10.7 2.7 12.0 16.
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PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) UC3610DWTR SOIC DW 16 2000 367.0 367.0 38.
PAGE 8
MECHANICAL DATA MCER001A – JANUARY 1995 – REVISED JANUARY 1997 JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE 0.400 (10,16) 0.355 (9,00) 8 5 0.280 (7,11) 0.245 (6,22) 1 0.063 (1,60) 0.015 (0,38) 4 0.065 (1,65) 0.045 (1,14) 0.310 (7,87) 0.290 (7,37) 0.020 (0,51) MIN 0.200 (5,08) MAX Seating Plane 0.130 (3,30) MIN 0.023 (0,58) 0.015 (0,38) 0°–15° 0.100 (2,54) 0.014 (0,36) 0.008 (0,20) 4040107/C 08/96 NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters).
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MECHANICAL DATA MPLC004A – OCTOBER 1994 FN (S-PQCC-J**) PLASTIC J-LEADED CHIP CARRIER 20 PIN SHOWN Seating Plane 0.004 (0,10) 0.180 (4,57) MAX 0.120 (3,05) 0.090 (2,29) D D1 0.020 (0,51) MIN 3 1 19 0.032 (0,81) 0.026 (0,66) 4 E 18 D2 / E2 E1 D2 / E2 8 14 0.021 (0,53) 0.013 (0,33) 0.007 (0,18) M 0.050 (1,27) 9 13 0.008 (0,20) NOM D/E D2 / E2 D1 / E1 NO. OF PINS ** MIN MAX MIN MAX MIN MAX 20 0.385 (9,78) 0.395 (10,03) 0.350 (8,89) 0.356 (9,04) 0.141 (3,58) 0.169 (4,29) 28 0.
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IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.