Datasheet

ManualsBrandsTEXAS INSTRUMENTS ManualsPMICsPMIC - gate drivers Non-inverting Low side SOIC 8

VDD

OUTA

OUTB

INA

GND

INB

NC – No internal connection

UCC27323

(DUAL INVERTING)

D, DGN, OR P PACKAGE

(TOP VIEW)

VDD

OUTA

OUTB

INA

GND

INB

UCC27324

(DUAL NONINVERTING)

D, DGN, OR P PACKAGE

(TOP VIEW)

VDD

OUTA

OUTB

INA

GND

INB

UCC27325

(ONE INVERTING, ONE )

D, DGN, OR P PACKAGE

(TOP VIEW)

NONINVERTING

UCC27323-Q1, UCC27324-Q1, UCC27325-Q1

www.ti.com

SLUS678A –MARCH 2008–REVISED APRIL 2012

DUAL 4-A PEAK HIGH-SPEED LOW-SIDE POWER MOSFET DRIVERS

Check for Samples: UCC27323-Q1, UCC27324-Q1, UCC27325-Q1

FEATURES

• Qualified for Automotive Applications

• Dual Outputs Can Be Paralleled for Higher

Drive Current

• Industry-Standard Pinout

• Available in Thermally Enhanced MSOP

• High Current Drive Capability of ±4 A at the

PowerPAD™ Package with 4.7°C/W θ

Miller Plateau Region

• Rated From –40°C to 125°C

• Efficient Constant Current Sourcing Even at

Low Supply Voltages • TrueDrive™ Output Architecture Using Bipolar

and CMOS Transistors in Parallel

• TTL-/CMOS-Compatible Inputs Independent of

Supply Voltage

APPLICATIONS

• 20-ns Typical Rise and 15-ns Typical Fall

• Switch-Mode Power Supplies

Times with 1.8-nF Load

• DC/DC Converters

• Typical Propagation Delay Times of 25 ns With

Input Falling and 35 ns With Input Rising

• Motor Controllers

• Supply Voltage of 4 V to 15 V

• Line Drivers

• Supply Current of 0.3 mA

• Class D Switching Amplifiers

DESCRIPTION/ORDERING INFORMATION

The UCC27323/UCC27324/UCC27325 high-speed dual MOSFET drivers can deliver large peak currents into

capacitive loads. Three standard logic options are offered — dual inverting, dual noninverting, and one inverting

and one noninverting driver. The thermally enhanced 8-pin PowerPAD™ MSOP package (DGN) drastically

lowers the thermal resistance to improve long-term reliability. The drivers are also offered in the standard SOIC-8

(D) or PDIP-8 (P) packages.

Using a design that inherently minimizes shoot-through current, these drivers deliver 4 A of current where it is

needed most, at the Miller plateau region during the MOSFET switching transition. A unique bipolar and

MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2PowerPAD, TrueDrive are trademarks of Texas Instruments.

UNLESS OTHERWISE NOTED this document contains

PRODUCTION DATA information current as of publication date.

Products conform to specifications per the terms of Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

Summary of content (16 pages)

PAGE 1
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 www.ti.
PAGE 2
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678A – MARCH 2008 – REVISED APRIL 2012 www.ti.
PAGE 3
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 www.ti.com SLUS678A – MARCH 2008 – REVISED APRIL 2012 TERMINAL FUNCTIONS TERMINAL I/O DESCRIPTION NO. NAME 1 NC 2 INA 3 GND 4 INB I Input B. Input signal of the A driver. Has logic-compatible threshold and hysteresis. If not used, this input should be tied to either VDD or GND. It should not be left floating. 5 OUTB O Driver output B. The output stage can provide 4-A drive current to the gate of a power MOSFET. 6 VDD I Supply.
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UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678A – MARCH 2008 – REVISED APRIL 2012 www.ti.com ABSOLUTE MAXIMUM RATINGS (1) (2) over operating free-air temperature range (unless otherwise noted) VDD Supply voltage –0.3 V to 16 V IO Output current (OUTA, OUTB) DC, IOUT_DC 0.3 A Pulsed (0.5 μs), IOUT_PULSED 4.
PAGE 5
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 www.ti.com SLUS678A – MARCH 2008 – REVISED APRIL 2012 INPUT (INA, INB) ELECTRICAL CHARACTERISTICS VCC = 4.5 V to 15 V, TA = –40°C to 125°C (unless otherwise noted) PARAMETER VIH Logic 1 input threshold VIL Logic 0 input threshold TEST CONDITIONS MIN TYP MAX 2 0 V ≤ VIN ≤ VDD Input current UNIT V 1 V μA –10 0 10 MIN TYP MAX UNIT 300 450 mV 22 45 mV 30 35 OUTPUT (OUTA, OUTB) ELECTRICAL CHARACTERISTICS VCC = 4.
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UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678A – MARCH 2008 – REVISED APRIL 2012 www.ti.com APPLICATION INFORMATION General Information High-frequency power supplies often require high-speed high-current drivers such as those available in the UCC2732x family. A leading application is the need to provide a high-power buffer stage between the PWM output of the control device and the gates of the primary power MOSFET or IGBT switching devices.
PAGE 7
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 www.ti.com SLUS678A – MARCH 2008 – REVISED APRIL 2012 Source/Sink Capabilities During Miller Plateau Large power MOSFETs present a large load to the control circuitry. Proper drive is required for efficient, reliable operation. The UCC2732x drivers have been optimized to provide maximum drive to a power MOSFET during the Miller plateau region of the switching transition.
PAGE 8
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678A – MARCH 2008 – REVISED APRIL 2012 www.ti.com It should be noted that the current-sink capability is slightly stronger than the current source capability at lower VDD. This is due to the differences in the structure of the bipolar-MOSFET power output section, where the current source is a P-channel MOSFET and the current sink has an N-channel MOSFET.
PAGE 9
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 www.ti.com SLUS678A – MARCH 2008 – REVISED APRIL 2012 Figure 5. In a power driver operating at high frequency, it is a significant challenge to get clean waveforms without much overshoot/undershoot and ringing. The low output impedance of these drivers produces waveforms with high Δi/Δt. This tends to induce ringing in the parasitic inductances. Utmost care must be used in the circuit layout. It is advantageous to connect the driver as close as possible to the leads.
PAGE 10
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678A – MARCH 2008 – REVISED APRIL 2012 www.ti.com There is an equal amount of energy transferred to ground when the capacitor is discharged. This leads to a power loss given by: P = 2 × ½CV2f Where f is the switching frequency This power is dissipated in the resistive elements of the circuit. Thus, with no external resistor between the driver and gate, this power is dissipated inside the driver.
PAGE 11
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 www.ti.com SLUS678A – MARCH 2008 – REVISED APRIL 2012 NOTE The PowerPAD thermal pad is not directly connected to any leads of the package. However, it is electrically and thermally connected to the substrate, which is the ground of the device. References 1. Power Supply Seminar SEM-1400 Topic 2: Design And Application Guide For High Speed MOSFET Gate Drive Circuits, Laszlo Balogh (SLUP133) 2.
PAGE 12
UCC27323-Q1, UCC27324-Q1, UCC27325-Q1 SLUS678A – MARCH 2008 – REVISED APRIL 2012 www.ti.com REVISION HISTORY Changes from Original (March, 2008) to Revision A Page • Added an extra table note in Power Dissipation Ratings table for the DGN package specifying that TJ = 150°C. .............. 4 • Added TA = TJ to header of Overall Electrical Characteristics table. ....................................................................................
PAGE 13
PACKAGE OPTION ADDENDUM www.ti.com 4-Apr-2012 PACKAGING INFORMATION Orderable Device UCC27324QDRQ1 Status (1) Package Type Package Drawing ACTIVE SOIC D Pins Package Qty 8 2500 Eco Plan (2) Green (RoHS & no Sb/Br) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) CU NIPDAU Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs.
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