Datasheet

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6N137

2007-10-01

TOSHIBA Photocoupler GaAℓAs Ired & Photo IC

6N137

Degital Logic Isolation

Tele-Communication

Analog Data Equipment Control

The TOSHIBA 6N137 consist of a high emitting diode and a one chip

photo IC. This unit is 8-lead DIP package.

• LSTTL / TTL compatible: 5V Supply

• Ultra high speed: 10MBd

• Guaranteed performance over temperature: 0°C to 70°C

• High isolation voltage: 2500Vrms min.

• UL recognized: UL1577, file no. E67349

Truth Table

Input Enable Output

H H L

L H H

H L H

L L H

GND

Pin Configurations (top view)

1 : N.C.

2 : Anode

3 : Cathode

4 : N.C.

5 : GND

6 : Output(Open collector)

7 : Enable

8 : V

Unit in mm

TOSHIBA 11−10C4

Weight: 0.54g

Summary of content (8 pages)

PAGE 1
6N137 TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N137 Degital Logic Isolation Tele-Communication Analog Data Equipment Control Unit in mm The TOSHIBA 6N137 consist of a high emitting diode and a one chip photo IC. This unit is 8-lead DIP package. • LSTTL / TTL compatible: 5V Supply • Ultra high speed: 10MBd • Guaranteed performance over temperature: 0°C to 70°C • High isolation voltage: 2500Vrms min. • UL recognized: UL1577, file no.
PAGE 2
6N137 Absolute Maximum Ratings Characteristic Symbol Rating Unit IF 20 mA IFP 40 mA VR 5 V Output current IO 50 mA Output voltage VO 7 V Supply voltage (1 minute maximum) VCC 7 V Enable input voltage (not to exceed VCC by more than 500mV) VEH 5.
PAGE 3
6N137 Electrical Characteristics Over Recommended Temperature (Ta = 0~70°C unless otherwise noted) Characteristic Symbol Test Condition Min. (**)Typ. Max. Unit High level output current IOH VCC=5.5V, VO=5.5V IF=250μA, VE = 2.0V ― 1 250 μA Low level output voltage VOL VCC=5.5V, IF=5mA VEH=2.0V IOL(sinking)=13mA ― 0.4 0.6 V High level enable current IEH VCC=5.5V, VE=2.0V ― −1.0 ― mA Low level enable current IEL VCC=5.5V, VE=0.5V ― −1.6 −2.
PAGE 4
6N137 Switching Characteristics (Ta = 25°C, VCC = 5V) Symbol Test Circuit Propagation delay time to high output level tpLH 1 Propagation delay time to low output level tpHL Output rise−fall time (10−90%) Characteristic Min. Typ. Max. Unit RL=350Ω, CL=15pF IF=7.5mA ― 60 75 ns 1 RL=350Ω, CL=15pF IF=7.5mA ― 60 75 ns tr, tf ― RL=350Ω, CL=15pF IF=7.5mA ― 30 ― ns Propagation delay time of enable from VEH to VEL tELH 2 RL=350Ω, CL=15pF IF=7.5mA VEH=3.0V VEL=0.
PAGE 5
6N137 Test Circuit 1. 5V tpHL and tpLH Pulse generator ZO = 50Ω tr = 5ns Input 175mV(IF = 3.75mA) tpHL tpLH Output VO VOH 1.5V IF Monitoring Node VOL 1 VCC 8 2 7 3 6 GND 4 47Ω 350mV(IF = 7.5mA) 0.1μF RL Bypass Output CL 5 VO monitoring node ･ CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2. tEHL and tELH Input VE Monitoring node Pulse generator ZO = 50Ω tr = 5ns 5V 1 3.0V Input VE 7.5mA dc IF 1.5V tEHL VOH tELH Output VO 1.
PAGE 6
N137 ΔVF / ΔTa – IF IF – V F -2.6 Forward voltage temperature coefficient ΔVF /Δta (mV / °C ) Ta = 25°C 10 Forward current IF (mA) 100 1 0.1 0.01 1.0 1.2 1.6 1.4 Forward voltage VF -1.6 1 0.3 (mA) VCC = 5.5V 5 VO = 5.5V 3 High level output current IOH (μA) RL = 350Ω 1kΩ 4kΩ 2 1 0.5 0.3 0.1 1 3 2 5 4 IF 6 0 20 8 60 Ta 80 (°C) VO L – Ta IF = 5mA Low level output voltage VOL (V) RL = 350Ω RL = 4kΩ VO 6 VCC = 5.5V 0.
PAGE 7
6N137 tpHL, tpLH - IF tpHL, tpLH - Ta 120 120 tpLH 100 80 tpLH 60 tpHL tpLH 1kΩ 350Ω 350Ω 1kΩ 40 4kΩ Ta = 25°C 20 Propagation delay time (ns) tpHL, tpLH Propagation delay time tpHL, tpLH (ns) 100 0 350Ω 1kΩ 350Ω 60 7 9 11 13 15 IF 17 4kΩ 40 VCC = 5V IF = 7.5mA 0 19 (mA) 10 20 VCC = 5V IF = 7.
PAGE 8
6N137 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.