Datasheet

TLP250
2007-10-01
1
TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8
−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: I
F
=5mA(max.)
• Supply current (I
CC
): 11mA(max.)
• Supply voltage (V
CC
): 10−35V
• Output current (I
O
): ±1.5A (max.)
• Switching time (t
pLH
/t
pHL
): 0.5μs(max.)
• Isolation voltage: 2500V
rms
(min.)
• UL recognized: UL1577, file No.E67349
• Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
: 4000V
PK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table
Tr1 Tr2
On On Off
Input
LED
Off Off On
Unit in mm
TOSHIBA 11−10C4
Weight: 0.54 g(Typ.)
Pin Configuration (top view)
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
1
2
3
4
5 : GND
6 : V
O
(Output)
7 : V
O
8 : V
CC
Schmatic
2+
V
F
I
F
3-
I
CC
(T
r
1)
V
O
GND
(T
r
2)
I
O
V
O
V
CC
8
7
6
5
A
0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).