Datasheet

TLP251
2007-10-01 1
TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC
TLP251
Inverter For Air Conditioner
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251 consists of a
GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
z Input threshold
current: I
F
=5mA(max.)
z Supply current (I
CC
): 11mA(max.)
z Supply voltage (V
CC
): 10−35V
z Output current (I
O
): ±0.4A(max.)
z Switching time (t
pLH
/ t
pHL
): 1μs(max.)
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file no.E67349
z Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
: 4000V
PK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
Truth Table
Tr1 Tr2
On On Off Input
LED
Off Off On
Pin Configuration (top view)
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
1
2
3
4
5 : GND
6 : V
O
(Output)
7 : N.C.
8 : V
CC
TOSHIBA 11−10C4
Weight: 0.54g(typ.)
Unit in mm
Schematic
A 0.1μF bypass capcitor must be connected
between pin 8 and 5(see Note 5).
2
V
F
I
F
3
I
CC
(T
r
1)
V
O
GND
(T
r
2)
I
O
V
CC
8
6
5