Datasheet

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TLP523,TLP523−2,TLP523−4

2002-09-25

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP523, TLP523−

−−

−2, TLP523−

−−

−4

Programmable Controllers

DC−Output Module

Solid State Relay

The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide

infrared emitting diode coupled with a silicon, darlington connected,

phototransistor which has an integral base−emitter resistor to optimize

switching speed and elevated temperature characteristics.

The TLP523−2 offers two isolated channels in a eight lead plastic DIP

package, while the TLP523−4 provide four isolated channels per

package.

· Current transfer ratio: 500% (min.) (I

= 1 mA)

· Isolation voltage: 2500 Vrms (min.)

· Collector−emitter voltage: 55 V (min.)

· Leakage current: 10µA (max.) (Ta = 85°C)

· UL recognized: UL1577, file no. E67349

Pin Configurations

(top view)

TLP523

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TLP523-2

1, 3 : Anode

2, 4 : Cathode

5, 7 : Emitter

6, 8 : Collector

TLP523-4

1, 3, 5, 7

2, 4, 6, 8

9, 11, 13, 15

10, 12, 14, 16

: Anode

: Cathode

: Emitter

: Collector

TOSHIBA 11−5B2

Weight: 0.26 g

TOSHIBA 11−10C4

Weight: 0.54 g

TOSHIBA 11−20A3

Weight: 1.1 g

Unit in mm

Summary of content (7 pages)

PAGE 1
TLP523,TLP523−2,TLP523−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP523, TLP523− −2, TLP523− −4 Unit in mm Programmable Controllers DC−Output Module Solid State Relay The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics.
PAGE 2
TLP523,TLP523−2,TLP523−4 Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol Detector LED Forward current Forward current derating TLP523 TLP523-2 TLP523-4 Unit IF 60 50 mA ∆IF /°C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA /°C Pulse forward current IFP 1 (100µs pulse, 100pps) A Reverse voltage VR 5 V Collector-emitter voltage VCEO 55 V Emitter-collector valtage VECO 0.3 V Collector current IC 150 mA Collector power dissipation (1 circuit) PC 150 100 mW ∆PC /°C -1.
PAGE 3
TLP523,TLP523−2,TLP523−4 Electrical Characteristics (Ta = 25°C) LED Characteristic Detector Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 µA Capacitance CT V = 0, f = 1 MHz — 30 — pF IC = 1 mA 55 — — V VCE = 24 V — 10 200 nA VCE = 24 V, Ta = 85°C — 0.5 10 µA V = 0, f = 1 MHz — 10 — pF 500 2000 — % IC = 50 mA, IF = 10 mA — — 1 V VS = 0, f = 1 MHz — 0.
PAGE 4
TLP523,TLP523−2,TLP523−4 IF – Ta 80 TLP523 60 TLP523 -2, -4 40 20 0 -20 0 20 40 PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forwafd current IF (mA) 100 60 80 100 TLP523 160 120 TLP523 -2, -4 80 40 0 -20 120 0 IFP – DR 100 80 120 temperature Ta (℃) Ta = 25℃ 50 Ta = 25℃ (mA) 30 1000 500 Forward current IF (mA) IFP Pulse forward current 60 IF – VF 100 Pulse width ≤ 100µs 3000 40 Ambient Ambient temperature Ta (℃) 5000 20 300 100 50 30 10
PAGE 5
TLP523,TLP523−2,TLP523−4 IC – IF 300 IC – IF 300 VCE = 1V Ta = 25°C Sample 1 50 30 Collector current 2 (mA) 100 IC (mA) 30 Collector current 50 IC 100 VCE = 1.2V Ta = 25°C 3 10 5 3 Sample 1 2 3 10 5 3 1 1 0.3 3 10 Forward current IF 1 30 1 0.3 (mA) Test condition 30 (mA) Test condition A : IC=100mA, IF=10mA A : IF =10mA, VCE=1.2V B : IC=50mA, IF=10mA B : IF =10mA, VCE=1.0V C : IC=10mA, IF=1mA C : IF =2mA, VCE=1.2V D : IC=1mA, IF=0.5mA D : IF =2mA, VCE=1.
PAGE 6
TLP523,TLP523−2,TLP523−4 IC – VCE IC – VCE 500 300 PC Max. Sample 1 Ta = 25℃ IF = 10mA 300 2mA 100 100 2 50 (mA) 3 30 PC Max. IC 10 Collector current Collector current IC (mA) 50 5 3 1mA 30 10 0.5mA 5 3 1 1 0.5 0.5 0.3 0.3 IF = 1mA Ta = 25℃ 0.1 0.1 0.3 1 3 10 Collector-emitter voltage 0.1 0 30 0.4 0.8 VCE (V) 2.0 2.4 2.
PAGE 7
TLP523,TLP523−2,TLP523−4 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.