Datasheet

ManualsBrandsTranscend Manualscomputer componentsTS16MLD64V6D5

184PIN DDR266 Unbuffered DIMM

128MB With 16Mx8 CL2.5

Description

The TS16MLD64V6D5 is a 16M x 64bits Double Data

Rate SDRAM high density for DDR266. The

TS16MLD64V6D5 consists of 8pcs CMOS 16Mx8 bits

Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

packages and a 2048 bits serial EEPROM on a 184-pin

printed circuit board. The TS16MLD64V6D5 is a Dual

In-Line Memory Module and is intended for mounting into

184-pin edge connector sockets.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V

• Max clock Freq: 133MHZ.

• Double-data-rate architecture; two data transfers per

clock cycle

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transition with CK transition

• Auto and Self Refresh 15.6us refresh interval.

• Data I/O transactions on both edge of data strobe.

• Edge aligned data output, center aligned data input.

• Serial Presence Detect (SPD) with serial EEPROM

• SSTL-2 compatible inputs and outputs.

• MRS cycle with address key programs.

CAS Latency (Access from column address) : 2.5

Burst Length (2,4,8)

Data Sequence (Sequential & Interleave)

Placement

PCB: 09-1395

Transcend Information Inc.

Summary of content (11 pages)

PAGE 1
84PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 Description Placement The TS16MLD64V6D5 is a 16M x 64bits Double Data Rate SDRAM high density for DDR266. The TS16MLD64V6D5 consists of 8pcs CMOS 16Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 184-pin printed circuit board. The TS16MLD64V6D5 is a Dual In-Line Memory Module and is intended for mounting into 184-pin edge connector sockets.
PAGE 2
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 Dimensions Pin Identification Symbol Inches Function Side Millimeters A 133.35±0.20 5.250±0.008 A0~A11, BA0, BA1 Address input B 72.39 2.850 DQ0~DQ63 Data Input / Output. C 6.35 0.250000 DQS0~DQS7 Data strobe input/output D 2.20 0.0870 E 31.75±0.20 1.250±0.00800 CK0, /CK0, CK1, /CK1 Clock Input. CK2, /CK2 F 19.80 0.779 G 4.00 0.157 H 12.00 0.472 I 1.27±0.10 0.050±0.
PAGE 3
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.
PAGE 4
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.
PAGE 5
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V Voltage on VDD supply to Vss VDD, VDDQ -1.0 ~ 3.
PAGE 6
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, VDD=2.7V, TA = 10 °C) Parameter Operating current - One bank Active-Precharge; tRC=tRCmin; tCK=133MHZ for DDR266 DQ, DM and DQS inputs changing twice per clock cycle; Address and control inputs changing once per clock cycle Operating current - One bank operation; One bank open, Burst=4; Reads - Refer to the following page for detailed test condition.
PAGE 7
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 AC OPERATING CONDITIONS Parameter Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals Input Differential Voltage, CK and /CK inputs Input Crossing Point Voltage, CK and /CK inputs Note: Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) Min VREF + 0.31 0.7 0.5*VDDQ - 0.2 Max Unit Note VREF - 0.31 VDDQ + 0.6 0.5*VDDQ + 0.2 V V V V 3 3 1 2 1.
PAGE 8
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 AC Timing Parameters & Specifications (These AC characteristics were tested on the Component) Parameter Symbol Min Max Unit Note Row cycle time tRC 65 ns Refresh row cycle time tRFC 75 ns Row active time tRAS 45 120K ns /RAS to /CAS delay tRCD 20 ns Row active to Row active delay tRP 20 ns Row active to Row active delay tRRD 15 ns Write recovery time tWR 15 ns Last data in to Read command tWTR 1 tCK Col. Address to Col.
PAGE 9
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 SIMPLIFIED TRUTH TABLE COMMAND Extended Mode Register Set Mode Register Set Auto Refresh Entry Self Refresh Exit Register Register Refresh Bank Active & Row Addr.
PAGE 10
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 Serial Presence Detect Specification Serial Presence Detect Byte No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Function Described # of Bytes Written into Serial Memory Total # of Bytes of S.P.
PAGE 11
184PIN DDR266 Unbuffered DIMM 128MB With 16Mx8 CL2.5 TS16MLD64V6D5 64-71 72 Manufacturers JEDEC ID Manufacturing Location Transcend T 7F, 4F 54 54 53 31 36 4D 4C 73-90 Manufacturers Part Number TS16MLD64V6D5 44 36 34 56 36 44 35 20 20 20 20 20 91-92 93-94 95-98 99-127 128~255 Revision Code Manufacturing Date Assembly Serial Number Manufacturer Specific Data Unused Storage Locations Transcend Information Inc.