Datasheet

T
T
T
S
S
S
5
5
5
1
1
1
2
2
2
M
M
M
S
S
S
K
K
K
6
6
6
4
4
4
V
V
V
3
3
3
N
N
N
204PIN DDR3 1333 SO-DIMM
4096MB With 256Mx8 CL9
Transcend Information Inc.
1
Description
The TS512MSK64V3N is a 512M x 64bits DDR3-1333
SO-DIMM. The TS512MSK64V3N consists of 16pcs
256Mx8bits DDR3 SDRAMs FBGA packages and a 2048
bits serial EEPROM on a 204-pin printed circuit board.
The TS512MSK64V3N is a Dual In-Line Memory Module
and is intended for mounting into 204-pin edge connector
sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
RoHS compliant products.
JEDEC standard 1.5V ± 0.075V Power supply
VDDQ=1.5V ± 0.075V
Clock Freq: 667MHZ for 1333Mb/s/Pin.
Programmable CAS Latency: 6, 7, 8, 9
Programmable Additive Latency (Posted /CAS): 0,
CL-2 or CL-1 clock
Programmable /CAS Write Latency (CWL) = 7
(DDR3-1333)
8 bit pre-fetch
Burst Length: 4, 8
Bi-directional Differential Data-Strobe
Internal calibration through ZQ pin
On Die Termination with ODT pin
Serial presence detect with EEPROM
Asynchronous reset
Placement
AB
D
E
C
F
G
H
I
J
K
PCB: 09-2842

Summary of content (3 pages)