Data Sheet

AMC1100
SBAS562 –APRIL 2012 www.ti.com
PACKAGE CHARACTERISTICS
(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Shortest terminal-to-terminal distance
L(I01) Minimum air gap (clearance) 7 mm
through air
Shortest terminal-to-terminal distance
L(I02) Minimum external tracking (creepage) 7 mm
across package surface
Tracking resistance
CTI DIN IEC 60112 and VDE 0303 part 1 > 400 V
(comparative tracking index)
Minimum internal gap
Distance through insulation 0.014 mm
(internal clearance)
Input to output, V
IO
= 500 V, all pins on
each side of the barrier tied together to > 10
12
Ω
create a two-terminal device, T
A
< +85°C
R
IO
Isolation resistance
Input to output, V
IO
= 500 V,
> 10
11
Ω
+85°C ≤ T
A
< T
A
max
C
IO
Barrier capacitance input to output V
I
= 0.5 V
PP
at 1 MHz 1.2 pF
C
I
Input capacitance to ground V
I
= 0.5 V
PP
at 1 MHz 3 pF
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of a specific
application. Care should be taken to maintain the creepage and clearance distance of the board design to ensure that the mounting
pads of the isolator on the printed circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal
according to the measurement techniques shown in the Isolation Glossary section. Techniques such as inserting grooves or ribs on the
PCB are used to help increase these specifications.
ELECTRICAL CHARACTERISTICS
All minimum and maximum specifications are at T
A
= –40°C to +105°C and are within the specified voltage range, unless
otherwise noted. Typical values are at T
A
= +25°C, VDD1 = 5 V, and VDD2 = 3.3 V.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Maximum input voltage before
VINP – VINN ±320 mV
clipping
Differential input voltage VINP – VINN –250 +250 mV
V
CM
Common-mode operating range -0.16 VDD1 V
V
OS
Input offset voltage –1.5 ±0.2 +1.5 mV
TCV
OS
Input offset thermal drift –10 ±1.5 +10 µV/K
V
IN
from 0 V to 5 V at 0 Hz 108 dB
CMRR Common-mode rejection ratio
V
IN
from 0 V to 5 V at 50 kHz 95 dB
C
IN
Input capacitance to GND1 VINP or VINN 3 pF
C
IND
Differential input capacitance 3.6 pF
R
IN
Differential input resistance 28 kΩ
Small-signal bandwidth 60 100 kHz
OUTPUT
Nominal gain 8
Initial, at T
A
= +25°C –0.5 ±0.05 +0.5 %
G
ERR
Gain error
–1 ±0.05 +1 %
TCG
ERR
Gain error thermal drift ±56 ppm/K
4.5 V ≤ VDD2 ≤ 5.5 V –0.075 ±0.015 +0.075 %
Nonlinearity
2.7 V ≤ VDD2 ≤ 3.6 V –0.1 ±0.023 +0.1 %
Nonlinearity thermal drift 2.4 ppm/K
Output noise VINP = VINN = 0 V 3.1 mV
RMS
vs VDD1, 10-kHz ripple 80 dB
PSRR Power-supply rejection ratio
vs VDD2, 10-kHz ripple 61 dB
Rise-and-fall time 0.5-V step, 10% to 90% 3.66 6.6 µs
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