Datasheet

ManualsBrandsUnbranded ManualsDiodesNXP Semiconductors

1. Product profile

1.1 General description

High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)

plastic packages.

1.2 Features and benefits

1.3 Applications

 High-speed switching

 General-purpose switching

BAS16 series

High-speed switching diodes

Rev. 6 — 24 September 2014 Product data sheet

Table 1. Product overview

Type number Package Configuration Package

configuration

NXP JEITA JEDEC

BAS16 SOT23 - TO-236AB single small

BAS16H SOD123F - - single small and flat lead

BAS16J SOD323F SC-90 - single very small and flat

lead

BAS16L SOD882 - - single leadless ultra

small

BAS16T SOT416 SC-75 - single ultra small

BAS16VV SOT666 - - triple isolated ultra small and flat

lead

BAS16VY SOT363 SC-88 - triple isolated very small

BAS16W SOT323 SC-70 - single very small

BAS316 SOD323 SC-76 - single very small

BAS516 SOD523 SC-79 - single ultra small and flat

lead

 High switching speed: t

 4ns  Low capacitance

 Low leakage current  Reverse voltage: V

 100 V

 Repetitive peak reverse voltage:

RRM

 100 V

 Small SMD plastic packages

 AEC-Q101 qualified

Summary of content (21 pages)

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BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VR reverse voltage - - 100 V IR reverse current VR = 80 V - - 0.5 A trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 ; IR(meas) = 1 mA - - 4 ns 2. Pinning information Table 3.
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BAS16 series NXP Semiconductors High-speed switching diodes 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BAS16 TO-236AB plastic surface-mounted package; 3 leads SOT23 BAS16H - plastic surface-mounted package; 2 leads SOD123F BAS16J SC-90 plastic surface-mounted package; 2 leads SOD323F BAS16L DFN1006-2 leadless ultra small plastic package; 2 terminals; body 1.0  0.6  0.
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BAS16 series NXP Semiconductors High-speed switching diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IF forward current Conditions Min Max Unit BAS16 [1] - 215 mA BAS16H BAS16L [2] - 215 mA BAS16T [1] - 155 mA [1][3] - 200 mA BAS16W [1] - 175 mA BAS16J BAS316 BAS516 [1] - 250 mA - 500 mA tp = 1 s - 4 A tp = 1 ms - 1 A tp = 1 s - 0.
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BAS16 series NXP Semiconductors High-speed switching diodes 6. Thermal characteristics Table 7.
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BAS16 series NXP Semiconductors High-speed switching diodes 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IF = 1 mA - - 715 mV IF = 10 mA - - 855 mV IF = 50 mA - - 1 V Per diode VF IR Cd Product data sheet IF = 150 mA - - 1.25 V VR = 25 V - - 30 nA VR = 80 V - - 0.
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BAS16 series NXP Semiconductors High-speed switching diodes 006aab132 103 IF (mA) mbg704 102 IFSM (A) 102 10 10 1 (1) (2) (3) (4) 1 10−1 10−1 0 0.2 0.4 0.6 0.8 1.0 1 1.2 1.4 VF (V) 10 102 103 104 tp (μs) (1) Tamb = 150 C Based on square wave currents. (2) Tamb = 85 C Tj(init) = 25 C (3) Tamb = 25 C (4) Tamb = 40 C Fig 1. Forward current as a function of forward voltage; typical values Fig 2.
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BAS16 series NXP Semiconductors High-speed switching diodes 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω V = VR + IF × RS (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T.
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BAS16 series NXP Semiconductors High-speed switching diodes 9. Package outline 3.0 2.8 1.7 1.5 1.1 0.9 1.2 1.0 1 3 0.55 0.35 0.45 0.15 2.5 1.4 2.1 1.2 3.6 3.4 1 2 0.48 0.38 1.9 04-11-04 Package outline BAS16 (SOT23/TO-236AB) 1.35 1.15 2 0.15 0.09 Dimensions in mm Fig 7. 2.7 2.5 0.70 0.55 Dimensions in mm Fig 8. 04-11-29 Package outline BAS16H (SOD123F) 0.80 0.65 2 0.30 0.22 2.7 2.3 0.50 0.46 0.62 0.55 0.5 0.3 1 0.25 0.10 1.8 1.6 1.02 0.95 0.65 0.30 0.
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BAS16 series NXP Semiconductors High-speed switching diodes 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 2.2 1.8 0.45 0.15 4 2.2 1.35 2.0 1.15 2 1 3 0.3 0.2 0.65 2 0.25 0.10 0.4 0.3 1.3 06-03-16 Fig 13. Package outline BAS16VY (SOT363) 1.35 1.15 Dimensions in mm 04-11-04 Fig 14. Package outline BAS16W (SOT323/SC-70) 0.85 0.75 1.1 0.8 0.45 0.15 1 1.65 1.25 1.55 1.15 2 2 0.40 0.25 0.25 0.10 0.34 0.26 03-12-17 Fig 15.
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BAS16 series NXP Semiconductors High-speed switching diodes 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 18.
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BAS16 series NXP Semiconductors High-speed switching diodes 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Dimensions in mm Fig 19. Reflow soldering footprint BAS16H (SOD123F) 3.05 2.2 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Fig 20.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.3 R0.05 (8×) 0.7 solder lands solder resist 0.6 0.7 0.8 (2×) (2×) (2×) 0.9 solder paste occupied area 0.3 (2×) Dimensions in mm 0.4 (2×) 0.5 (2×) sod882_fr Fig 21. Reflow soldering footprint BAS16L (SOD882/DFN1006-2) 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3×) occupied area Dimensions in mm 0.6 (3×) 1.3 sot416_fr Fig 22.
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BAS16 series NXP Semiconductors High-speed switching diodes 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) placement area 0.55 (2×) solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 23. Reflow soldering footprint BAS16VV (SOT666) 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.
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BAS16 series NXP Semiconductors High-speed switching diodes 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig 26.
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BAS16 series NXP Semiconductors High-speed switching diodes 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) 3.05 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 2.2 0.5 (2×) 0.6 (2×) Dimensions in mm sod323_fr Fig 28.
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BAS16 series NXP Semiconductors High-speed switching diodes 5 2.9 1.5 (2×) solder lands solder resist occupied area 2.75 1.2 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) 2.15 1.4 solder lands solder resist 0.5 0.6 (2×) (2×) 1.2 solder paste occupied area Dimensions in mm 0.4 (2×) 0.5 (2×) sod523_fr Fig 30.
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BAS16 series NXP Semiconductors High-speed switching diodes 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BAS16_SER_6 20140924 Product data sheet - BAS16_SER_5 Modifications: • • • • • Section 1.
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BAS16 series NXP Semiconductors High-speed switching diodes 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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BAS16 series NXP Semiconductors High-speed switching diodes No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Translations — A non-English (translated) version of a document is for reference only.
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NXP Semiconductors BAS16 series High-speed switching diodes 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . .