Datasheet

BAS16_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 6 — 24 September 2014 6 of 21
NXP Semiconductors
BAS16 series
High-speed switching diodes
7. Characteristics
[1] Pulse test: t
p
 300 s; 0.02.
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage
[1]
I
F
= 1 mA - - 715 mV
I
F
= 10 mA - - 855 mV
I
F
=50mA --1V
I
F
=150mA --1.25V
I
R
reverse current V
R
=25V --30nA
V
R
=80V --0.5A
V
R
=25V; T
j
=150C --30A
V
R
=80V; T
j
=150C --50A
C
d
diode capacitance f = 1 MHz; V
R
=0V
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
--1.5pF
BAS516 - - 1 pF
t
rr
reverse recovery time I
F
=10mA; I
R
=10mA;
R
L
= 100 ;
I
R(meas)
=1 mA
--4ns
V
FR
forward recovery voltage I
F
=10mA; t
r
=20ns --1.75V