Datasheet

1997 Jul 08 2
Philips Semiconductors Product specification
NPN medium frequency transistor BFS20
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 20 V)
• Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
MARKING
TYPE NUMBER MARKING CODE
BFS20 G1p
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter −−30 V
V
CEO
collector-emitter voltage open base −−20 V
I
CM
peak collector current −−25 mA
P
tot
total power dissipation T
amb
≤ 25 °C −−250 mW
h
FE
DC current gain I
C
= 7 mA; V
CE
=10V 40 85 −
f
T
transition frequency I
C
= 5 mA; V
CE
= 5 V; f = 100 MHz 275 450 − MHz