Datasheet

1997 Jul 08 3
Philips Semiconductors Product specification
NPN medium frequency transistor BFS20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − 30 V
V
CEO
collector-emitter voltage open base − 20 V
V
EBO
emitter-base voltage open collector − 4V
I
C
collector current (DC) − 25 mA
I
CM
peak collector current − 25 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current I
E
= 0; V
CB
=20V −−100 nA
I
E
= 0; V
CB
=20V; T
j
= 100 °C −−10 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=4V −−100 nA
h
FE
DC current gain I
C
= 7 mA; V
CE
= 10 V 40 85 −
V
BE
base-emitter voltage I
C
= 7 mA; V
CE
=10V − 740 900 mV
C
c
collector capacitance I
E
=i
e
= 0; V
CB
=10V; f=1MHz − 1 − pF
C
re
feedback capacitance I
C
= 0; V
CB
= 10 V; f = 1 MHz − 350 − fF
f
T
transition frequency I
C
= 5 mA; V
CE
= 10 V; f = 100 MHz 275 450 − MHz