Data Sheet

DRV8835
www.ti.com
SLVSB18D MARCH 2012REVISED JANUARY 2014
ELECTRICAL CHARACTERISTICS
T
A
= 25°C, V
M
= 5 V, V
CC
= 3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
No PWM, no load 85 200 µA
I
VM
VM operating supply current
50 kHz PWM, no load 650 2000 µA
V
M
= 2 V, V
CC
= 0 V, all inputs 0 V 5
I
VMQ
VM sleep mode supply current nA
V
M
= 5 V, V
CC
= 0 V, all inputs 0 V 10 95
I
VCC
VCC operating supply current 450 2000 µA
V
CC
rising 2
VCC undervoltage lockout
V
UVLO
V
voltage
V
CC
falling 1.9
LOGIC-LEVEL INPUTS
V
IL
Input low voltage 0.3 x V
CC
V
V
IH
Input high voltage 0.5 x V
CC
V
I
IL
Input low current V
IN
= 0 -5 5 μA
I
IH
Input high current V
IN
= 3.3 V 50 μA
R
PD
Pulldown resistance 100 kΩ
H-BRIDGE FETS
V
CC
= 3 V, V
M
= 3 V, I
O
= 800 mA,
370 420
T
J
= 25°C
R
DS(ON)
HS + LS FET on resistance m
V
CC
= 5 V, V
M
= 5 V, I
O
= 800 mA,
305 355
T
J
= 25°C
I
OFF
Off-state leakage current ±200 nA
PROTECTION CIRCUITS
I
OCP
Overcurrent protection trip level 1.6 3.5 A
t
DEG
Overcurrent deglitch time 1 µs
t
OCR
Overcurrent protection retry time 1 ms
t
DEAD
Output dead time 100 ns
t
TSD
Thermal shutdown temperature Die temperature 150 160 180 °C
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