Datasheet

4
FDP42AN15A0 — N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
C
= 25°C unless otherwise noted
©2002 Fairchild Semiconductor Corporation
FDP42AN15A0 Rev. C2
www.fairchildsemi.com
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
0.1
1
10
100
1 10 100 300
200
I
D
, DRAIN CURRENT (A)
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10µs
1ms
DC
100µs
10ms
0.001 0.01 0.1 1 10
I
AS
, AVALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R ≠ 0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
1
10
100
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
80
345678
0
20
40
60
80
0 201 54
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
V
GS
= 6V
20
I
D
, DRAIN CURRENT (A)
DRAIN TO SOURCE ON RESISTANCE(mΩ)
35
40
45
50
0 01 03 40
V
GS
= 6V
V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESISTANCE
V
GS
= 10V, I
D
=12A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
2.5
-80 -40 0 40 80 120 160 200