Datasheet

ManualsBrandsUnbranded ManualsFETsInfineon Technologies IRFR024N, MOSFET N channel 16A 55V

IRFR/U024N

PRELIMINARY

HEXFET

Power MOSFET

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 3.3

θJA

Case-to-Ambient (PCB mount)** ––– 50 °C/W

θJA

Junction-to-Ambient ––– 110

Thermal Resistance

DSS

= 55V

DS(on)

= 0.075Ω

= 17A

Description

www.irf.com 1

D-Pak

TO-252AA

I-Pak

TO-251AA

l Ultra Low On-Resistance

l Surface Mount (IRFR024N)

l Straight Lead (IRFU024N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per

silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs are well known for,

provides the designer with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or

wave soldering techniques. The straight lead version (IRFU series) is for

through-hole mounting applications. Power dissipation levels up to 1.5 watts

are possible in typical surface mount applications.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 17

@ T

= 100°C Continuous Drain Current, V

@ 10V 12 A

Pulsed Drain Current  68

= 25°C Power Dissipation 45 W

Linear Derating Factor 0.30 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 71 mJ

Avalanche Current 10 A

Repetitive Avalanche Energy 4.5 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD- 9.1336A

Summary of content (10 pages)

PAGE 1
PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.075Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRFR/U024N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.
PAGE 3
IRFR/U024N 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , D rain-to-S ource C urrent (A ) D I , D rain-to-S ource C urrent (A ) D 10 4.5V 20µ s P U LS E W ID TH TC = 25°C 1 0.1 1 10 A 10 4.5V 0.1 100 3.0 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D , D ra in -to-S o urc e C urren t (A ) TJ = 2 5 °C T J = 1 7 5 °C 10 V DS = 2 5V 2 0 µ s P U L S E W ID T H 6 7 8 9 V G S , G a te -to -S o u rc e V o lta g e (V ) Fig 3.
PAGE 4
IRFR/U024N V GS C is s C rs s C oss C , C apacitanc e (pF ) 600 500 C iss 400 C oss = = = = 20 0V , f = 1M H z C gs + C gd , Cds S H O R TE D C gd C ds + C gd V G S , G ate-to-S ource V oltage (V ) 700 300 200 C rs s 100 0 10 V D S = 44V V D S = 28V 16 12 8 4 FO R TE S T C IR C U IT S E E FIG U R E 13 0 A 1 I D = 10 A 100 0 V D S , D rain-to-S ource V oltage (V ) 12 16 A 20 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFR/U024N 20 RD VDS VGS I D , D rain C urrent (A m ps) 16 D.U.T. RG + -VDD 12 4.5V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit VDS 4 90% A 0 25 50 75 100 125 150 175 TC , C ase T em perature (°C ) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms T h erm al R es p on s e (Z th JC ) 10 D = 0.5 0 1 0 .2 0 0 .1 0 0 .0 5 PD M 0 .02 0 .01 0.
PAGE 6
IRFR/U024N 1 5V L VD S D R IV E R D .U .T RG + V - DD IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit A E A S , S ingle P ulse A valanc he E nergy (m J) 140 TO P 120 B O TTO M ID 4.2A 7.2A 10A 100 80 60 40 20 0 V D D = 25V 25 50 A 75 100 125 150 175 S tarting T J , Junction T em perature (°C ) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .
PAGE 7
IRFR/U024N Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRFR/U024N Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) 1.14 (.045) 0.89 (.035) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 10.42 (.410) 9.40 (.370) 1 2 LE A D A S S IG NM E N TS 1 - G A TE 3 0.51 (.020) M IN . -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.
PAGE 9
IRFR/U024N Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265 ) 6.35 (.250 ) 2.38 (.09 4) 2.19 (.08 6) -A- 0.58 (.023 ) 0.46 (.018 ) 1 .2 7 (.0 50) 0 .8 8 (.0 35) 5.46 (.215 ) 5.21 (.205 ) LE A D A S S IG N M E N T S 4 1 - GATE 2 - D R A IN 6.45 (.245 ) 5.68 (.224 ) 3 - SOU RC E 6.22 (.24 5) 5.97 (.23 5) 1.52 (.06 0) 1.15 (.04 5) 1 2 4 - D R A IN 3 -B- N OTES: 1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 1 4.5M , 1982 . 2.28 (.09 0) 1.
PAGE 10
IRFR/U024N Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches) TR TRR 1 6.3 ( .6 41 ) 1 5.7 ( .6 19 ) 12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 ) F E E D D IR E C T IO N TRL 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) F E E D D IR E C T IO N NOTES : 1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R . 2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.