Datasheet

09/16/10
www.irf.com 1
HEXFET
®
Power MOSFET
V
DSS
= 75V
R
DS(on)
= 22mΩ
I
D
= 42A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
D-Pak
IRFR2607ZPbF
I-Pak
IRFU2607ZPbF
IRFR2607ZPbF
IRFU2607ZPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 1.38
R
θ
JA
Junction-to-Ambient (PCB mount)
––– 40 °C/W
R
θ
JA
Junction-to-Ambient
––– 110
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
110
0.72
± 20
Max.
45
32
180
42
96
96
See Fig.12a, 12b, 15, 16
Lead-Free
PD - 95953A